IOR IR2110L4 User Manual

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Data Sheet No. PD-6.085

IR2110L4

HIGH AND LOW SIDE DRIVER

Features

n Floating channel designed for bootstrap

operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune

n Gate drive supply range from 10 to 20V

Product Summary

V

OFFSET

IO+/- 2A / 2A

V

OUT

t

(typ.) 120 & 94 ns

on/off

Delay Matching 10 ns

400V max.

10 - 20V

n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V

Logic and power ground ±5V offset

n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels
n Outputs in phase with inputs

Description

The IR2110L4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side ref­erenced output channels. Proprietary HVIC and latch im­mune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers feature a
high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up

to 400 volts.

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings
are measured under board mounted and still air conditions.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) — 50 V/ns

P

D

R

thJA

T

J

T

S

T

L

High Side Floating Supply Voltage -0.5 VS + 20
High Side Floating Supply Offset Voltage — 4 00
High Side Floating Output Voltage VS - 0.5 V
Low Side Fixed Supply Voltage -0.5 20
Low Side Output Voltage -0.5 VCC + 0.5 V
Logic Supply Voltage -0.5 VSS + 20
Logic Supply Offset Voltage VCC - 20 V
Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 V

Package Power Dissipation @ TA £ +25°C — 1.6 W
Thermal Resistance, Junction to Ambient — 75 °C/W
Junction Temperature -5 5 125
Storage Temperature -55 150 °C
Lead Temperature (Soldering, 10 seconds) — 300
Weight 1.5 (typical) g

CC
DD

B

+ 0.5

+ 0.5
+ 0.5

2/14/97

IR2110L4

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be
used within the recommended conditions. The VS and VSS offset ratings are tested with all supplies
biased at 15V differential. Typical ratings at other bias conditions are shown in Figures 36 and 37.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

Dynamic Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical

BIAS

characteristics are measured using the test circuit shown in Figure 3.

Symbol Parameter Min. Typ. Max. Min. Max. Units Test Conditions

t

on

t

off

t

sd

t

r

t

f

MT Delay Matching, HS & LS Turn-On/Off — — 10 — — |

High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage -4 4 00
High Side Floating Output Voltage V

S

V

B

Low Side Fixed Supply Voltage 10 20 V
Low Side Output Voltage 0 V

CC

Logic Supply Voltage VSS + 5 VSS + 20
Logic Supply Offset Voltage -5 5
Logic Input Voltage (HIN, LIN & SD) V

SS

V

DD

Tj = 25°C Tj =

-55 to 125°C

Turn-On Propagation Delay — 120 150 — 260 VS = 0V
Turn-Off Propagation Delay — 94 125 — 220 VS = 400V
Shutdown Propagation Delay — 110 140 — 235 VS = 400V
Turn-On Rise Time — 25 35 — 50 CL = 1000pf
Turn-Off Fall Time — 17 25 — 40 CL = 1000pf

ns

H

H

-Lt

| / |

t

t

on

on

off

-Lt

|

off

T ypical Connection

V

DD

HIN

SD
LIN
V

SS

V

CC

V

DD

HIN
SD
LIN
V

SS

HO

V

COM

LO

up to 500V

4

V

B

V

S

CC

TO

LOAD

IR2110L4

Static Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are refer-

BIAS

enced to VSS and are applicable to all three logic input pins: HIN, LIN and SD. The VO and IO parameters
are referenced to COM or VS and are applicable to the respective output pins: HO or LO.

Tj = 25°C Tj =

-55 to 125°C

Symbol Parameter Min. Typ. Max. Min. Max. Units Test Conditions

V

V

V

V

I

LK

I

QBS

I

QCC

I

QDD

I

IN+

I

IN-

V

BSUV+VBS

V

BSUV-VBS

V

CCUV+VCC

V

CCUV-VCC

I

O+

I

O-

Logic “1” Input Voltage 3.1 — — 3 .3 — VDD = 5V

IH

6.4 — — 6.8 — V

9.5 — — 10 —

V

12.5 — — 13.3 — VDD = 20V

Logic “0” Input Voltage — — 1 .8 — 1.7 VDD = 5V

IL

— — 3.8 — 3.6 V
— — 6 — 5.7

V

— — 8.3 — 7.9 VDD = 20V

High Level Output Voltage, V

OH

Low Level Output Voltage, V

OL

BIAS

- V

O

— 0.7 1.2 — 1.5 V

O

— — 0.1 — 0.1 V
Offset Supply Leakage Current — — 50 — 250 VB = VS = 400V
Quiescent VBS Supply Current — 125 230 — 500 µ A V
Quiescent VCC Supply Current — 180 340 — 600 V
Quiescent VDD Supply Current — 5 30 — 60 V
Logic “1” Input Bias Current — 15 40 — 70 VIN = V
Logic “0” Input Bias Current — — 1.0 — 10 V

Supply Undervoltage Positive 7.5 8.6 9. 7 — —

Going Threshold

Supply Undervoltage Negative 7 .0 8.2 9.4 — —

Going Threshold

Supply Undervoltage Positive 7. 4 8.5 9.6 — — V

Going Threshold

Supply Undervoltage Negative 7.0 8. 2 9.4 — —
Going Threshold
Output High Short Circuit Pulsed 2.0 — — — — VO = 0V, VIN = V
Current A PW £ 10 µs
Output Low Short Circuit Pulsed 2.0 — — — — VO = 15V, VIN = 0V
Current PW £ 10 µs

= 10V

DD

VDD = 15V

= 10V

DD

VDD = 15V

IN =VIH, IO
IN =VIH, IO

=0V or V

IN

=0V, or V

IN

=0V, or V

IN

= 0V

IN

= 0A
= 0A

DD

DD
DD

DD

DD

IR2110L4

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient T est Circuit

HV = 10 to 400V

50%

t

off

90% 90%

t

(0 to 400V)

HIN
LIN

50%

t

on

t

r

HO
LO

Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition

HIN
LIN

SD

50%

t

sd

HO

90%

LO

Figure 5. Shutdown Waveform Definitions

Figure 6. Delay Matching Waveform Definitions

10% 10%

50% 50%

LO

MT

HO

10%

90%

f

MT

HOLO

IR2110L4

250

200

150

Max.

Typ.

100

Turn-On Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

250

200

Max.

Typ.

150

100

Turn-On Delay Time (ns)

50

0

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage

250

200

150

Max.

100

Typ.

Turn-Off Delay Time (ns)

50

250

200

Max.

150

Typ.

100

Turn-Off Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

0

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage

250

200

150

Max.

100

Typ.

Shutdown Delay Time (ns)

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

Figure 9A. Shutdown Time vs. Temperature

250

200

Max.

150

Typ.

100

Shutdown Delay time (ns)

50

0

10 12 14 16 18 20

V

Supply Voltage (V)

BIAS

Figure 9B. Shutdown Time vs. Voltage