IOR IR210SG12HCB User Manual
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PHASE CONTROL THYRISTORS
Junction Size: Square 210 mils
Wafer Size: 4"
V
Class: 1200 V
RRM
Passivation Process: Glassivated MESA
Bulletin I0204J 02/97
IR210SG12HCB
Reference IR Packaged Part: 25RIA Series
Major Ratings and Characteristics
Parameters Units Test Conditions
V
Maximum On-state Voltage 1.5 V TJ = 25°C, IT = 25 A
TM
Reverse Breakdown Voltage 1200 V TJ = 25°C, I
V
RRM
I
Max. Required DC Gate Current to Trigger 60 mA TJ = 25° C, anode supply = 6 V, resistive load
GT
Max. Required DC Gate Voltage to Trigger 1.9 V TJ = 25° C, anode supply = 6 V, resistive load
V
GT
I
Holding Current Range 10 to 125 mA Anode supply = 6 V, resistive load
H
Maximum Latching Current 200 mA Anode supply = 6 V, resistive load
I
L
(1) Nitrogen flow on die edge.
= 100 µA (1)
RRM
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions 210 x 210 mils (see drawing)
Wafer Diameter 100 mm, with std. < 100 > flat
Wafer Thickness 370 µm ± 10 µm
Maximum Width of Sawing Line 130 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
www.irf.com
1
IR210SG12HCB
Bulletin I0204J 02/97
Ordering Information Table
Device Code
IR 210 S G 12 H CB
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: S = Solderable SCR
4 - Passivation Process: G = Glassivated MESA
5 - Voltage code: Code x 100 = V
6 - Metallization: H = Silver (Anode) - Silver (Cathode)
7 - CB = Probed Uncut Die (wafer in box)
Outline Table
1 23
RRM
None = Probed Die in chip carrier
4
5
6
7
All dimensions are in microns (mils)
2 www.irf.com
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