IOR IR210DGHCB User Manual
查询IR210DG..HCB SERIES供应商
HIGH POWER RECTIFIER DIODES
Junction Size: Square 210 mils
Wafer Size: 4"
V
Class: 600 and 1200 V
RRM
Passivation Process: Glassivated MESA
Bulletin I0133J 05/99
IR210DG..HCB SERIES
Reference IR Packaged Part: 40HF Series
Major Ratings and Characteristics
Parameters Units Test Conditions
V
Maximum Forward Voltage 1000 mV TJ = 25°C IF = 25A
FM
V
Reverse Breakdown Voltage Range 600 and 1200 V TJ = 25°C IR = 100µA (1)
RRM
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions 210 x 210 mils (see drawing)
Wafer Diameter 100 mm, with std. < 110 > flat
Wafer Thickness 300 µm
Maximum Width of Sawing Line 130 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
1
IR210DG..HCB Series
Bulletin I0133J 05/99
Ordering Information Table
Device Code
IR 210 D G 12 H C B
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: D = Standard Recovery Diode
4 - Passivation Process: G = Glassivated MESA
5 - Voltage code: Code x 100 = V
6 - Metallization: H = Silver (Anode) - Silver (Cathode)
7 - Probed Uncut Die
Outline Table
1 2
RRM
3
4
567
Available Class
06 = 600V
12 = 1200V
All dimensions are in millimeters
2
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