IOR IR2109 4-S User Manual
查询IR2109(4) (S)供应商
Data Sheet No. PD60163-P
IR2109(4)
(S)
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
•
Undervoltage lockout for both channels
•
3.3V, 5V and 15V input logic compatible
•
Cross-conduction prevention logic
•
Matched propagation delay for both channels
•
High side output in phase with IN input
•
Logic and power ground +/- 5V offset.
•
Internal 540ns dead-time, and programmable
•
up to 5us with one external R
Lower di/dt gate driver for better noise immunity
•
Shut down input turns off both channels.
•
resistor (IR21094)
DT
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minim um driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Product Summary
V
OFFSET
I
+/- 120 mA / 250 mA
O
V
OUT
t
(typ.) 750 & 200 ns
on/off
Dead Time 540 ns
(programmable up to 5uS for IR21094)
600V max.
10 - 20V
Packages
14 Lead SOIC
8 Lead SOIC
14 Lead PDIP
8 Lead PDIP
Typical Connection
up to 600V
V
CC
V
V
CC
IN
SD
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please ref er to our
Application Notes and DesignTips for proper
circuit board layout.
IN
SD
www.irf.com 1
B
HO
V
S
LOCOM
IR2109
TO
LOAD
HO
V
V
CC
IN
SD
V
SS
R
DT
V
CC
IN
SD
DT
V
B
V
S
COM
SS
LO
IR21094
up to 600V
TO
LOAD
)
(
IR2109(4)
S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
DT Programmable dead-time pin voltage (IR21094 only) VSS - 0.3 V
V
IN
V
SS
dVS/dt Allowable offset supply voltage transient — 50 V/ns
P
D
Rth
JA
T
J
T
S
T
L
High side floating absolute voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
Low side and logic fixed supply voltage -0.3 25
Low side output voltage -0.3 VCC + 0.3
Logic input voltage (IN & SD) VSS - 0.3 V
Logic ground (IR21094/IR21894 only) V
Package power dissipation @ TA ≤ +25°C (8 Lead PDIP) — 1.0
(8 Lead SOIC) — 0.625
(14 lead PDIP) — 1.6
(14 lead SOIC) — 1.0
Thermal resistance, junction to ambient (8 Lead PDIP) — 125
(8 Lead SOIC) — 200
(14 lead PDIP) — 75
(14 lead SOIC) — 120
Junction temperature — 150
Storage temperature -50 150
Lead temperature (soldering, 10 seconds) — 300
- 25 V
CC
CC
CC
CC
B
+ 0.3
+ 0.3
+ 0.3
+ 0.3
V
W
°C/W
°C
2 www.irf.com
IR2109(4)
(S)
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage VS + 10 VS + 20
V
S
V
HO
V
CC
V
LO
V
IN
DT Programmable dead-time pin voltage (IR21094 only) V
V
SS
T
A
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
High side floating supply offset voltage Note 1 600
High side floating output voltage V
Low side and logic fixed supply voltage 10 20
Low side output voltage 0 V
Logic input voltage (IN & SD) V
Logic ground (IR21094 only) -5 5
Ambient temperature -40 125 °C
and VSS offset rating are tested with all supplies biased at 15V differential.
S
S
SS
SS
V
B
CC
V
CC
V
CC
V
Dynamic Electrical Characteristics
V
(VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.
BIAS
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
t
off
t
sd Shut-down propagation delay
MT Delay matching, HS & LS turn-on/off — 0 70
t
t
DT Deadtime: LO turn-off to HO turn-on(DT
MDT Deadtime matching = DT
www.irf.com 3
Turn-on propagation delay — 750 950 VS = 0V
Turn-off propagation delay — 200 280 VS = 0V or 600V
— 200 280
nsec
Turn-on rise time — 150 220 VS = 0V
r
Turn-off fall time — 50 80 VS = 0V
f
400 540 680 RDT= 0
4 5 6 usec RDT = 200k (IR21094)
— 0 60 RDT=0
— 0 600 RDT = 200k (IR21094)
nsec
HO turn-off to LO turn-on (DT
- DT
LO - HO
HO-LO
LO-HO) &
HO-LO)
Loading...