IOR IR2105 User Manual

Data Sheet No. PD60139J

IR2105

HALF BRIDGE DRIVER

Features

• Floating channel designed for bootstrap operation

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

• 5V Schmitt-triggered input logic

• Cross-conduction prevention logic

• Internally set deadtime

• High side output in phase with input

• Match propagation delay for both channels

Description

The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies en­able ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.

Product Summary

V

OFFSET

IO+/- 130 mA / 270 mA

V

OUT

t

(typ.) 680 & 150 ns

on/off

Deadtime (typ.) 520 ns

600V max.

10 - 20V

Packages

8 Lead PDIP

8 Lead SOIC

T ypical Connection

V

CC

IN

V

CC

IN
COM

LO

V

HO

V

up to 600V

B

TO

S

LOAD

IR2105

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

dVs/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating absolute voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
Low side and logic fixed supply voltage -0.3 25
Low side output voltage -0.3 VCC + 0.3
Logic input voltage -0.3 V

Package power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0

(8 Lead SOIC) — 0.625

Thermal resistance, junction to ambient (8 Lead DIP) — 125

(8 Lead SOIC) — 200
Junction temperature — 150
Storage temperature -55 150 °C
Lead temperature (soldering, 10 seconds) — 300

CC

B

+ 0.3

+ 0.3

°C/W

V

W

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.

2

High side floating supply absolute voltage VS + 10 VS + 20
High side floating supply offset voltage Note 1 600
High side floating output voltage V
Low side and logic fixed supply voltage 10 20
Low side output voltage 0 V
Logic input voltage 0 V
Ambient temperature -40 125

S

V

B

CC
CC

V

°C

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IR2105

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.

BIAS

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off
t

t

DT Deadtime, LS turn-off to HS turn-on & 4 00 520 650

MT Delay matching, HS & LS turn-on/off — — 60

Static Electrical Characteristics

V

BIAS

COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Min. Typ. Max. Units Test Conditions

V
V

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

CCUV+VCC

V

CCUV-

I

O+

I

O-

Turn-on propagation delay — 68 0 820 VS = 0V
Turn-off propagation delay — 15 0 220 VS = 600V
Turn-on rise time — 10 0 170

r

Turn-off fall time — 50 90

f

HS turn-on to LS turn-off

(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to

Logic “1” (HO) & Logic “0” (LO) Input Voltage 3 — — VCC = 10V to 20V

IH

Logic “0” (HO) & Logic “1” (LO) Input Voltage — — 0.8 VCC = 10V to 20V

IL

High Level Output Voltage, V
Low Level Output Voltage, V
Offset Supply Leakage Current — — 50 VB = VS = 600V
Quiescent VBS Supply Current — 30 55 V
Quiescent VCC Supply Current — 150 270 VIN = 0V or 5V
Logic “1” Input Bias Current — 3 10 VIN = 5V
Logic “0” Input Bias Current — — 1 VIN = 0V

Supply Undervoltage Positive Going 8 8.9 9.8
Threshold
VCC Supply Undervoltage Negative Going 7.4 8.2 9
Threshold
Output High Short Circuit Pulsed Current 130 210 — VO = 0V

Output Low Short Circuit Pulsed Current 270 360 — VO = 15V

BIAS

O

- V

O

— — 100 IO = 0A
— — 100 IO = 0A

ns

V

mV

µA

V

mA

= 0V or 5V

IN

PW ≤ 10 µs

PW ≤ 10 µs

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3

IR2105

Functional Block Diagram

V

B

HV

LEVEL

DEAD

IN

TIME

DETECT

DEAD

TIME

UV

PULSE

GEN

SHIFT

PULSE

FILTER

Q

R
S

Lead Definitions

Lead

Symbol Description

IN Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
V

B

HO High side gate drive output
V

S

V

CC

LO Low side gate drive output
COM Low side return

High side floating supply

High side floating supply return
Low side and logic fixed supply

HO

V

S

V

LO

COM

CC

Lead Assignments

COM

LO

8 Lead PDIP 8 Lead SOIC

IR2105 IR2105S

4

COM

5

LO

5

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