IOR IR207LM-CS02CB User Manual
查询IR207LM..CS02CB SERIES供应商
FAST RECOVERY DIODES
Junction Size: Rectangular 207 x 157 mils
Wafer Size: 4"
V
Class: 200 to 600 V
RRM
Passivation Process: Glassivated MOAT
Bulletin I0138J 01/00
IR207LM..CS02CB SERIES
Reference IR Packaged Part: 20ETF Series
Major Ratings and Characteristics
Parameters Units Test Conditions
V
Maximum Forward Voltage 1300 mV TJ = 25°C, IF = 20 A
FM
Reverse Breakdown Voltage Range 200 to 600 V TJ = 25°C, I
V
RRM
(1) Nitrogen flow on die edge.
= 100 µA (1)
RRM
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness 100% Al, (20 µm)
Chip Dimensions 207 x 157 mils (5.26x3.99 mm) - see drawing
Wafer Diameter 100 mm, with std. < 110 > flat
Wafer Thickness 260 µm
Maximum Width of Sawing Line 45 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
1www.irf.com
IR207LM..CS02CB Series
Bulletin I0138J 01/00
Ordering Information Table
Device Code
IR 207 L M 06 C S02 CB
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: L = Wire Bondable Fast Recovery Diode
4 - Passivation Process: M = Glassivated MOAT
5 - Voltage code: Code x 100 = V
6 - Metallization: C = Aluminium (Anode) - Silver (Cathode)
7 -Trr code: S02 = 200 nsec
8 - CB = Probed Uncut Die (wafer in box)
Outline Table
RRM
None = Probed Die in chip carrier
1 23
4
567
Available Class
02 = 200 V
04 = 400 V
06 = 600 V
8
All dimensions are in microns
2
www.irf.com
Loading...