IOR IR207DMCCB User Manual
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STANDARD RECOVERY DIODES
Junction Size: Rectangular 207 x 157 mils
Wafer Size: 4"
V
Class: 800 and 1200 V
RRM
Passivation Process: Glassivated MOAT
Bulletin I0139J 01/00
IR207DM..CCB Series
Reference IR Packaged Part: 20ETS Series
Major Ratings and Characteristics
Parameters Units Test Conditions
V
Maximum Forward Voltage 1100 mV TJ = Amb., IF = 2 0 A
FM
V
Reverse Breakdown Voltage Range 800 and 1200 V TJ = Amb., I
RRM
(1) Nitrogen flow on die edge.
= 100 µA (1)
RRM
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness 100% Al, (20 µm)
Chip Dimensions 207 x 157 mils (see drawing)
Wafer Diameter 100 mm, with std. < 110 > flat
Wafer Thickness 300 µm
Maximum Width of Sawing Line 45 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR207DM..CCB Series
Bulletin I0139J 01/00
Ordering Information Table
Device Code
IR 207 D M 12 C CB
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: D = Wire Bondable Standard Recovery Diode
4 - Passivation Process: M = Glassivated MOAT
5 - Voltage code: Code x 100 = V
6 - Metallization: C = Aluminium (Anode) - Silver (Cathode)
7 - C B = Probed Uncut Die (wafer in box)
Outline Table
1 2
RRM
None = Probed Die in chip carrier
3
4
567
Available Class
08 = 800 V
12 = 1200 V
All dimensions are in millimeters
2
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