IOR IR207DM16CCB User Manual
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STANDARD RECOVERY DIODES
Junction Size: Rectangular 207 x 157 mils
Wafer Size: 4"
V
Class: 1600 V
RRM
Passivation Process: Glassivated MOAT
Bulletin I0140J 09/00
IR207DM16CCB
Reference IR Packaged Part: 20ETS Series
Major Ratings and Characteristics
Parameters Units Test Conditions
V
Maximum Forward Voltage 1.15 V TJ = 25°C, IF = 20 A
FM
V
Reverse Breakdown Voltage 1600 V (**) TJ = 25°C, I
RRM
(*) Nitrogen flow on die edge.
(**)
Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages
= 100 µA (*)
RRM
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness 100% Al, (20 µm)
Chip Dimensions 207 x 157 mils (see drawing)
Wafer Diameter 100 mm, with std. < 110 > flat
Wafer Thickness 330 µm, ± 10 µm
Maximum Width of Sawing Line 45 µm
Reject Ink Dot Size 0.25 mm diameter minimum
Ink Dot Location See drawing
Recommended Storage Environment Storage in original container, in dessicated
nitrogen, with no contamination
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1
IR207DM16CCB
Bulletin I0140J 09/00
Ordering Information Table
Device Code
IR 207 D M 16 C CB
1 - International Rectifier Device
2 - Chip Dimension in Mils
3 - Type of Device: D = Wire Bondable Standard Recovery Diode
4 - Passivation Process: M = Glassivated MOAT
5 - Voltage code: Code x 100 = V
6 - Metallization: C = Aluminium (Anode) - Silver (Cathode)
7 - CB = Probed Uncut Die (wafer in box)
Outline Table
RRM
None = Probed Die in chip carrier
1 23
4
56
7
All dimensions are in microns (mils)
2
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