IOR 11DQ09, 11DQ10 User Manual
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SCHOTTKY RECTIFIER 1.1 Amp
Bulletin PD-2.289 rev. F 06/03
11DQ09
11DQ10
Major Ratings and Characteristics
Characteristics 11DQ.. Units
I
Rectangular 1.1 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 85 A
FSM
VF@ 1 Apk, TJ = 25°C 0.85 V
TJrange - 40 to 150 °C
CASE STYLE AND DIMENSIONS
90 / 100 V
Description/ Features
The 11DQ.. axial leaded Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. Typical
applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
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Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1
11DQ09, 11DQ10
Bulletin PD-2.289 rev. F 06/03
Voltage Ratings
Part number 11DQ09 11DQ10
VRMax. DC Reverse Voltage (V)
V
Max. Working Peak Reverse Voltage (V)
RWM
90 100
Absolute Maximum Ratings
Parameters 11DQ.. Units Conditions
I
Max. Average Forward Current 1.1 A 50% duty cycle @ TC = 75°C, rectangular wave form
F(AV)
* See Fig. 4
I
Max. Peak One Cycle Non-Repetitive 85 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 6 14 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 1.0 mJ T
A
= 25 °C, I
J
= 0.5 Amps, L = 8 mH
AS
IARRepetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and with
rated V
RRM
applied
Electrical Specifications
Parameters 11DQ.. Units Conditions
VFMMax. Forward Voltage Drop 0.85 V @ 1A
* See Fig. 1 (1) 0.96 V @ 2A
0.68 V @ 1A
0.78 V @ 2A
IRMMax. Reverse Leakage Current 0.5 mA TJ = 25 °C
* See Fig. 2 (1) 1.0 mA TJ = 125 °C
CTTypical Junction Capacitance 35 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 8.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle <2%
TJ = 25 °C
TJ = 125 °C
VR = rated V
R
Thermal-Mechanical Specifications
Parameters 11DQ.. Units Conditions
TJMax. Junction Temperature Range (*) -40 to 150 °C
T
Max. Storage Temperature Range -40 to 150 °C
stg
R
Max. Thermal Resistance Junction 100 °C/W DC operation
thJA
to Ambient Without cooling fin
R
Typical Thermal Resistance Junction 81 °C/W DC operation (See Fig. 4)
thJL
to Lead
wt Approximate Weight 0.33(0.012) g (oz.)
Case Style DO-204AL(DO-41)
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2 www.irf.com
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