intersil X28HC256 DATA SHEET

®
www.BDTIC.com/Intersil
256k, 32k x 8-Bit
Data Sheet May 7, 2007
5V, Byte Alterable EEPROM
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Toggle Bit Polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard Software Data Protection feature for protecting against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum 1,000,000 write cycles per byte and an inherent data retention of 100 years.
Polling and
FN8108.2
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write
- Endurance: 1,000,000 cycles
- Data retention: 100 years
P-P
cell
control circuits
Block Diagram
A0 TO A ADDRESS
INPUTS
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free plus anneal available (RoHS compliant)
256kBIT
X BUFFERS
LATCHES AND
DECODER
14
Y BUFFERS
LATCHES AND
DECODER
CE
OE WE
CONTROL
LOGIC AND
TIMING
EEPROM
ARRAY
I/O BUFFERS
AND LATCHES
I/O0 TO I/O
DATA INPUTS/OUTPUTS
7
V
CC
V
SS
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
Ordering Information
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X28HC256
ACCESS TIME
PART NUMBER PART MARKING
X28HC256DI-15 X28HC256DI-15 RR 150 -40 to +85 28 Ld CERDIP F28.6 X28HC256DM-15 X28HC256DM-15 RR -55 to +125 28 Ld CERDIP F28.6 X28HC256DMB-15 C X28HC256DMB-15 MIL-STD-883 28 Ld CERDIP F28.6 X28HC256EMB-15 C X28HC256EMB-15 MIL-STD-883 32 Ld LCC (458 mils) X28HC256FMB-15 C X28HC256FMB-15 MIL-STD-883 28 Ld FLATPACK (440 mils) X28HC256J-15*, ** X28HC256J-15 RR 0 to +70 32 Ld PLCC N32.45x55 X28HC256JZ-15* (Note) X28HC256J-15 ZRR 0 to +70 32 Ld PLCC (Pb-free) N32.45x55 X28HC256JI-15*, ** X28HC256JI-15 RR -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-15* (Note) X28HC256JI-15 ZRR -40 to +85 32 Ld PLCC (Pb-free) N32.45x55 X28HC256JM-15* X28HC256JM-15 RR -55 to +125 32 Ld PLCC N32.45x55 X28HC256KI-15 X28HC256KI-15 RR -40 to +85 28 Ld PGA G28.550x650A X28HC256KM-15 X28HC256KM-15 RR -55 to +125 28 Ld PGA G28.550x650A X28HC256KMB-15 C X28HC256KMB-15 MIL-STD-883 28 Ld PGA G28.550x650A X28HC256P-15 X28HC256P-15 RR 0 to +70 28 Ld PDIP E28.6 X28HC256PZ-15 (Note) X28HC256P-15 RRZ 0 to +70 28 Ld PDIP (Pb-free)*** E28.6 X28HC256PI-15 X28HC256PI-15 RR -40 to +85 28 Ld PDIP E28.6 X28HC256PIZ-15 (Note) X28HC256PI-15 RRZ -40 to +85 28 Ld PDIP (Pb-free)*** E28.6 X28HC256PM-15 X28HC256PM-15 RR -55 to +125 28 Ld PDIP E28.6 X28HC256SI-15* X28HC256SI-15 RR -40 to +85 28 Ld SOIC (300 mil) MDP0027 X28HC256SIZ-15* (Note) X28HC256SI-15 RRZ -40 to +85 28 Ld SOIC (300 mil) (Pb-free) MDP0027 X28HC256SM-15 X28HC256SM-15 RR -55 to +125 28 Ld SOIC (300 mil) MDP0027 X28HC256D-12 X28HC256D-12 RR 120 0 to +70 28 Ld CERDIP (520 mils) F28.6 X28HC256DI-12 X28HC256DI-12 RR -40 to +85 28 Ld CERDIP (520 mils) F28.6 X28HC256DM-12 X28HC256DM-12 RR -55 to +125 28 Ld CERDIP (520 mils) F28.6 X28HC256DMB-12 C X28HC256DMB-12 MIL-STD-883 28 Ld CERDIP (520 mils) F28.6 X28HC256EI-12 X28HC256EI-12 RR -40 to +85 32 Ld LCC (458 mils) X28HC256EM-12 X28HC256EM-12 RR -55 to +125 32 Ld LCC (458 mils) X28HC256EMB-12 C X28HC256EMB-12 MIL-STD-883 32 Ld LCC (458 mils) X28HC256FMB-12 C X28HC256FMB-12 MIL-STD-883 28 Ld FLATPACK (440 mils) X28HC256J-12* X28HC256J-12 RR 0 to +70 32 Ld PLCC N32.45x55 X28HC256JZ-12* (Note) X28HC256J-12 ZRR 0 to +70 32 Ld PLCC (Pb-free) N32.45x55 X28HC256JI-12* X28HC256JI-12 RR -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-12* (Note) X28HC256JI-12 ZRR -40 to +85 32 Ld PLCC (Pb-free) N32.45x55 X28HC256KI-12 X28HC256KI-12 RR -40 to +85 28 Ld PGA G28.550x650A X28HC256KM-12 X28HC256KM-12 RR -55 to +125 28 Ld PGA G28.550x650A X28HC256KMB-12 C X28HC256KMB-12 MIL-STD-883 28 Ld PGA G28.550x650A X28HC256P-12 X28HC256P-12 RR 0 to +70 28 Ld PDIP E28.6 X28HC256PZ-12 (Note) X28HC256P-12 RRZ 0 to +70 28 Ld PDIP (Pb-free)*** E28.6 X28HC256PI-12 X28HC256PI-12 RR -40 to +85 28 Ld PDIP E28.6
(ns)
TEMP. RANGE
(°C) PACKAGE PKG. DWG. #
2
FN8108.2
May 7, 2007
Ordering Information (Continued)
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X28HC256
ACCESS TIME
PART NUMBER PART MARKING
X28HC256PIZ-12 (Note) X28HC256PI-12 RRZ -40 to +85 28 Ld PDIP (Pb-free)*** E28.6 X28HC256S-12* X28HC256S-12 RR 120 0 to +70 28 Ld SOIC (300 mils) MDP0027 X28HC256SZ-12 (Note) X28HC256S-12 RRZ 0 to +70 28 Ld SOIC (300 mils) (Pb-free) MDP0027 X28HC256SI-12* X28HC256SI-12 RR -40 to +85 28 Ld SOIC (300 mils) MDP0027 X28HC256SIZ-12 (Note) X28HC256SI-12 RRZ -40 to +85 28 Ld SOIC (300 mils) (Pb-free) MDP0027 X28HC256SM-12*, ** X28HC256SM-12 RR -55 to +125 28 Ld SOIC (300 mils) MDP0027 X28HC256D-90 X28HC256D-90 RR 90 0 to +70 28 Ld CERDIP (520 mils) F28.6 X28HC256DI-90 X28HC256DI-90 RR -40 to +85 28 Ld CERDIP (520 mils) F28.6 X28HC256DM-90 X28HC256DM-90 RR -55 to +125 28 Ld CERDIP (520 mils) F28.6 X28HC256DMB-90 C X28HC256DMB-90 MIL-STD-883 28 Ld CERDIP (520 mils) F28.6 X28HC256EM-90 X28HC256EM-90 RR -55 to +125 32 Ld LCC (458 mils) X28HC256EMB-90 C X28HC256EMB-90 MIL-STD-883 32 Ld LCC (458 mils) X28HC256FI-90 X28HC256FI-90 RR -40 to +85 28 Ld FLATPACK (440 mils) X28HC256FM-90 X28HC256FM-90 RR -55 to +125 28 Ld FLATPACK (440 mils) X28HC256FMB-90 C X28HC256FMB-90 MIL-STD-883 28 Ld FLATPACK (440 mils) X28HC256J-90* X28HC256J-90 RR 0 to +70 32 Ld PLCC N32.45x55 X28HC256JZ-90* (Note) X28HC256J-90 ZRR 0 to +70 32 Ld PLCC (Pb-free) N32.45x55 X28HC256JI-90* X28HC256JI-90 RR -40 to +85 32 Ld PLCC N32.45x55 X28HC256JIZ-90* (Note) X28HC256JI-90 ZRR -40 to +85 32 Ld PLCC (Pb-free) N32.45x55 X28HC256JM-90* X28HC256JM-90 RR -55 to +125 32 Ld PLCC N32.45x55 X28HC256KM-90 X28HC256KM-90 RR -55 to +125 28 Ld PGA G28.550x650A X28HC256KMB-90 C X28HC256KMB-90 MIL-STD-883 28 Ld PGA G28.550x650A X28HC256P-90 X28HC256P-90 RR 90 0 to +70 28 Ld PDIP E28.6 X28HC256PZ-90 (Note) X28HC256P-90 RRZ 0 to +70 28 Ld PDIP (Pb-free)*** E28.6 X28HC256PI-90 X28HC256PI-90 RR -40 to +85 28 Ld PDIP E28.6 X28HC256PIZ-90 (Note) X28HC256PI-90 RRZ -40 to +85 28 Ld PDIP (Pb-free)** E28.6 X28HC256S-90* X28HC256S-90 RR 0 to +70 28 Ld SOIC (300 mils) MDP0027 X28HC256SI-90* X28HC256SI-90 RR -40 to +85 28 Ld SOIC (300 mils) MDP0027 X28HC256SIZ-90 (Note) X28HC256SI-90 RRZ -40 to +85 28 Ld SOIC (300 mils) (Pb-free) MDP0027 X28HC256SI-20T1 200 -40 to +85 28 Ld SOIC (300 mils) Tape and Reel MDP0027
*Add "T1" suffix for tape and reel. **Add "T2" suffix for tape and reel. ***Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
(ns)
TEMP. RANGE
(°C) PACKAGE PKG. DWG. #
3
FN8108.2
May 7, 2007
Pinouts
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A
A
I/O
I/O
I/O
14
12
A
A
A
A
A
A
A
A
SS
7
6
5
4
3
2
1
0
0
1
2
X28HC256
TOP VIEW
1
2
3
4
5
6
7
X28HC256
8
9
10
11
12
13
14
28
V
CC
27
WE A
26
13
A8
25
A
24
9
A
23
11
22
OE A
10
CE I/O
I/O6
I/O
I/O
I/O3
7
5
4
21
20
19
18
17
16
15
(28 LD CERDIP, FLATPACK, PDIP, SOIC)
V
Pin Descriptions
X28HC256
(32 LD PLCC, LCC)
7
A
4 3 2 1 32 31 30
5
A
6
A
6
5
7
A
4
A3
8 9
A
2
A
10
1
11
A
0
12
NC
13
I/O
0
14 15 16 17 18 19 20
I/O1
X28HC256
TOP VIEW
14
V
NC
A12A
X28HC256
2
SS
I/O
I/O
NC
V
CC
3
WE
4
I/O
X28HC256
(28 LD PGA)
BOTTOM VIEW
13
A
A8
29
A
28
9
27
A
11
NC
26
OE
25
A
24
10
23
CE I/O
22
7
21
I/O
6
5
I/O
12
11
I/O
I/O
A
9
A
7
A
5
A
4
1
0
8 A
1
6 A
3
2 A12
5
6
I/O
2
13
A0
10
2
X28HC256
4
A
7
3
15
14
28
1
I/O
VSS
V
CC
A
14
I/O
I/O
3
5
I/O4
CE
OE
A
9
WE
6
18
I/O
7
19
A
10
21
A
11
23
A
8
25
A
13
26
17
16
20
22
24
27
Addresses (A0 to A14)
The Address inputs select an 8-bit memory location during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/write operations. When CE
is HIGH, power consumption is
reduced.
Output Enable (OE)
The Output Enable input controls the d ata output buffers, and is used to initiate read operations.
Data In/Data Out (I/O0 to I/O7)
Data is written to or read from the X28HC256 through the I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the X28HC256.
4
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May 7, 2007
X28HC256
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Pin Names
SYMBOL DESCRIPTION
to A
A
0
14
I/O0 to I/O
7
WE
CE OE Output Enable
V
CC
V
SS
NC No Connect
Address Inputs
Data Input/Output
Write Enable
Chip Enable
+5V
Ground
Device Operation
Read
Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE
Write
Write operations are initiated when both CE and WE are LOW and OE and WE by the falling edge of either CE
is HIGH. The X28HC256 supports both a CE
controlled write cycle. That is, the address is latched
or WE, whichever occurs last. Similarly, the data is latched internally by the rising edge of either CE
or WE, whichever occurs first. A byte write operation, once initiated, will automatically continue to completion, typically within 3ms.
Page Write Operation
The page write feature of the X28HC256 allows the entire memory to be written in typically 0.8 seconds. Page write allows up to one hundred twenty-eight bytes of data to be consecutively written to the X28HC256, prior to the commencement of the internal programming cycle. The host can fetch data from another device within the system during a page write operation (change the source address), but the page address (A write cycle to the part during this operation must be the same as the initial page address.
through A14) for each subsequent valid
7
or OE returning
or CE is HIGH.
The page write mode can be initiated during any write operation. Following the initial byte write cycle, the host can write an additional one to one hundred twenty-seven bytes in the same manner as the first byte was written. Each successive byte load cycle, started by the WE
HIGH to LOW transition, must begin within 100µs of the falling edge of the preceding WE
. If a subsequent WE HIGH to LOW transition is not detected within 100µs, the internal automatic programming cycle will commence. There is no page write window limitation. Effectively the page write window is infinitely wide, so long as the host continues to access the device within the byte load cycle time of 100µs.
Write Operation Status Bits
The X28HC256 provides the user two write operation status bits. These can be used to optimize a system write cycle time. The status bits are mapped onto the I/O bus as shown in Figure 1.
5TBDP 43210I/O
RESERVED
TOGGLE BIT
DATA
POLLING
FIGURE 1. STATUS BIT ASSIGNMENT
DATA Polling (I/O7)
The X28HC256 features DA T A Polling as a method to indicate to the host system that the byte write or page write cycle has completed. DATA
Polling allows a simple bit test operation to determine the status of the X28HC256. This eliminates additional interrupt inputs or external hardware. During the internal programming cycle, any attempt to read the last byte written will produce the complement of that data on I/O
(i.e.,
7
write data = 0xxx xxxx, read data = 1xxx xxxx). Once the programming cycle is complete, I/O
will reflect true data.
7
Toggle Bit (I/O6)
The X28HC256 also provides another method for determining when the internal write cycle is complete. During the internal programming cycle I/O LOW and LOW to HIGH on subsequent attempts to read the device. When the internal cycle is complete the toggling will cease, and the device will be accessible for additional read and write operations.
will toggle from HIGH to
6
5
FN8108.2
May 7, 2007
X28HC256
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DATA Polling I/O
WRITE
WE
CE
OE
I/O
7
A0 TO A
14
WRITE DATA
7
LAST
V
IH
An An An An An An
HIGH Z
V
OL
An
FIGURE 2. DATA POLLING BUS SEQUENCE
DATA Polling can effectively halve the time for writing to the X28HC256. The timing diagram in Figure 2 illustrates the sequence of events on the bus. The software flow diagram in Figure 3 illustrates one method of implementing the routine.
V
OH
X28HC256 READY
WRITES
COMPLETE?
YES
SAVE LAST DATA
AND ADDRESS
READ LAST
ADDRESS
IO
7
COMPARE?
YES
X28HC256
READY
NO
NO
FIGURE 3. DATA POLLING SOFTWARE FLOW
6
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May 7, 2007
X28HC256
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The Toggle Bit I/O
LAST WRITE
WE
CE
OE
I/O
6
¬
LAST WRITE
LOAD ACCUM
FROM ADDR n
6
YES
V
*
OH
V
OL
* I/O6 Beginning and ending state of I/O6 will vary.
FIGURE 4. TOGGLE BIT BUS SEQUENCE
HIGH Z
*
X28C512, X28C513
READY
Hardware Data Protection
The X28HC256 provides two hardware features that protect nonvolatile data from inadvertent writes.
• Default V
is 3.5V typically.
V
CC
• Write Inhibit—Holding either OE
HIGH will prevent an inadvertent write cycle during power­up and power-down, maintaining data integrity.
Sense—All write functions a re inhi bite d when
CC
LOW, WE HIGH, or CE
COMPARE
ACCUM WITH
ADDR n
COMPARE
OK?
YES
X28C256
READY
FIGURE 5. TOGGLE BIT SOFTWARE FLOW
NO
The Toggle Bit can eliminate the chore of saving and fetching the last address and data in order to implement DATA
Polling. This can be especially helpful in an array comprised of multiple X28HC256 memories that is frequently updated. The timing diagram in Figure 4 illustrates the sequence of events on the bus. The software flow diagram in Figure 5 illustrates a method for polling the Toggle Bit.
Software Data Protection
The X28HC256 offers a software-controlled data protection feature. The X28HC256 is shipped from Intersil with the software data protection NOT ENABLED; that is, the device will be in the standard operating mode. In this mode data should be protected during power-up/down operations through the use of external circuits. The host would then have open read and write access of the device once V was stable.
The X28HC256 can be automatically protected during power-up and power-down (without the need for external circuits) by employing the software data protection feature. The internal software data protection circuit is enabled after the first write operation, utilizing the software algorithm. This circuit is nonvolatile, and will remain set for the life of the device unless the reset command is issued.
Once the software protection is enabled, the X28HC256 is also protected from inadvertent and accidental writes in the powered-up state. That is, the software algorithm must be issued prior to writing additional data to the device.
CC
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FN8108.2
May 7, 2007
X28HC256
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Software Algorithm
Selecting the software data protection mode requires the host system to precede data write operations by a series of three write operations to three specific addresses. Refer to Figure 6 and 7 for the sequence. The three-byte sequence
Software Data Protection
V
CC
0V
DATA ADDRESS
CE
WE
WRITE DATA AA
TO ADDRESS
5555
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA A0
TO ADDRESS
5555
WRITE DATA XX
TO ANY
ADDRESS
WRITE LAST
BYTE TO
LAST ADDRESS
AAA
5555
55
2AAA
FIGURE 6. TIMING SEQUENCE—BYTE OR PAGE WRITE
BYTE/PAGE LOAD ENABLED
OPTIONAL BYTE/PAGE LOAD OPERATION
A0
5555
opens the page write window, enabling the host to write from one to one hundred twenty-eight bytes of data. Once the page load cycle has been completed, the device will automatically be returned to the data protected state.
t
BLC MAX
WRITES
OK
BYTE
OR
AGE
t
WC
WRITE PROTECTED
Regardless of whether the device has previously been protected or not, once the software data protection algorithm is used and data has been written, the X28HC256 will automatically disable further writes unless another command is issued to cancel it. If no further commands are issued the X28HC256 will be write protected during power-down and after any subsequent power-up.
Note: Once initiated, the sequence of write operations should not be interrupted.
(VCC)
AFTER t
RE-ENTERS DATA
PROTECTED STATE
WC
FIGURE 7. WRITE SEQUENCE FOR SOFTWARE DATA
8
FN8108.2
May 7, 2007
Resetting Software Data Protection
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V
CC
X28HC256
DATA
ADDRESS
CE
WE
AAA
5555
55
2AAA
FIGURE 8. RESET SOFTWARE DATA PROTECTION TIMING SEQUENCE
80
5555
AA
5555
55
2AAA
20
5555
Note: Once initiated, the sequence of write operations
WRITE DATA AA
TO ADDRESS
5555
should not be interrupted.
SYSTEM CONSIDERATIONS
Because the X28HC256 is frequently used in large memory
WRITE DATA 55
TO ADDRESS
2AAA
arrays, it is provided with a two line control architecture for both read and write operations. Proper usage can provide the lowest possible power dissipation, and eliminate the possibility of contention where multiple I/O pins share the same bus.
WRITE DATA 80
TO ADDRESS
5555
To gain the most benefit, it is recommended that CE decoded from the address bus and be used as the primary device selection input. Both OE common among all devices in the array. For a read
WRITE DATA AA
TO ADDRESS
5555
operation, this assures that all deselected devices are in their standby mode, and that only the selected device(s) is/are outputting data on the bus.
t
WC
and WE would then be
STANDARD OPERATING MODE
be
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA 20
TO ADDRESS
5555
AFTER tWC,
RE-ENTERS
UNPROTECTED
STATE
FIGURE 9. WRITE SEQUENCE FOR RESETTING SOFTWARE
In the event the user wants to deactivate the software data protection feature for testing or reprogramming in an EEPROM programmer, the following six step algorithm will reset the internal protection circuit. After t
, the X28HC256
WC
will be in standard operating mode.
Because the X28HC256 has two power modes, standby and active, proper decoupling of the memory array is of prime concern. Enabling CE
will cause transient current spikes. The magnitude of these spikes is dependent on the output capacitive loading of the l/Os. Therefore, the larger the array sharing a common bus, the larger the transient spikes. The voltage peaks associated with the current transients can be suppressed by the proper selection and placement of decoupling capacitors. As a minimum, it is recommended that a 0.1µF high frequency ceramic capacitor be used between V
and VSS at each device. Depending on the size of the
CC
array, the value of the capacitor may have to be larger. In addition, it is recommended that a 4.7µF electrolytic bulk
capacitor be placed between V
and VSS for each eight
CC
devices employed in the array. This bulk capacitor is employed to overcome the voltage droop caused by the inductive effects of the PC board traces.
9
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X28HC256
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Absolute Maximum Ratings Thermal Information
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28HC256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28HC256I, X28HC256M . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on any Pin with Respect to V
DC Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
. . . . . . . . . . . . . -1V to +7V
SS
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Commerical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications Over Recommended Operating Conditions, Unless Otherwise Specified.
PARAMETER SYMBOL TEST CONDITIONS
VCC Active Current (TTL Inputs)
V
Standby Current
CC
(TTL Inputs)
Standby Current
V
CC
(CMOS Inputs) Input Leakage Current I Output Leakage Current I Input LOW Voltage V Input HIGH Voltage V Output LOW Voltage V Output HIGH Voltage V
NOTES:
1. Typical values are for T min. and VIH max. are for reference only and are not tested.
2. V
IL
A
I
CC
I
SB1
I
SB2
(Note 2) -1 0.8 V
lL
(Note 2) 2 VCC + 1 V
IH
CE = OE = VIL, WE = VIH, All I/O’s = open, address inputs = .4V/2.4V levels @ f = 10MHz
CE = VIH, OE = VIL, All I/O’s = open, other inputs = V
CE = VCC - 0.3V , OE = GND, All I/Os = open, other inputs = V
VIN = VSS to V
LI
V
LO
OL
OH
OUT
IOL = 6mA 0.4 V IOH = -4mA 2.4 V
- 0.3V
CC
CC
= VSS to VCC, CE = V
= +25°C and nominal supply voltage.
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp *Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.
LIMITS
TYP
(Note 7) MAX
30 60 mA
IH
12mA
200 500 µA
10 µA
IH
10 µA
UNITMIN
Power-up Timing
PARAMETER SYMBOL MAX UNIT
Power-up to read t Power-up to write t
, Note 3 100 µs
PUR
, Note 3 5 ms
PUW
NOTE:
3. This parameter is periodically sampled and not 100% tested.
10
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Capacitance T
SYMBOL TEST CONDITIONS MAX UNIT
C
(Note 9) Input/output capacitance V
I/O
(Note 9) Input capacitance VIN = 0V 6 pF
C
IN
= +25°C, f = 1MHz, VCC = 5V.
A
= 0V 10 pF
I/O
Endurance and Data Retention
PARAMETER MIN MAX UNIT
Endurance 1,000,000 Cycles Data retention 100 Years
AC Conditions of Test
Input pulse levels 0V to 3V Input rise and fall times 5ns Input and output timing levels 1.5V
Mode Selection
CE OE WE MODE I/O POWER
L L H Read D LHL Write DINactive H X X St andby and write
inhibit X L X Write inhibit — X X H Write inhibit
OUT
High Z standby
active
Symbol Table
WAVEFORM INPUTS OUTPUTS
Must be steady
May change from LOW to HIGH
May change from HIGH to LOW
Don’t Care: Changes Allowed
N/A Center Line
Will be steady
Will change from LOW to HIGH
Will change from HIGH to LOW
Changing: State Not Known
is High Impedance
Equivalent AC Load Circuit
5V
1.92kΩ
OUTPUT
1.37kΩ
30pF
11
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
AC Electrical Specifications Over Recommended Operating Conditions, Unless Otherwise Specified.
X28HC256-70 X28HC256-90 X28HC256-12 X28HC256-15
PARAMETER SYMBOL
Read Cycle Time t Chip Enable Access Time t Address Access Time t Output Enable Access Time t
LOW to Active Output tLZ (Note 4) 0 0 0 0 ns
CE OE LOW to Active Output t
HIGH to High Z Output tHZ (Note 4) 35 40 50 50 ns
CE
HIGH to High Z Output t
OE Output Hold from Address Change t
Read Cycle
ADDRESS
(Note 5) 70 90 120 150 ns
RC
(Note 5) 70 90 120 150 ns
CE
(Note 5) 70 90 120 150 ns
AA
OE
(Note 4) 0 0 0 0 ns
OLZ
(Note 4) 35 40 50 50 ns
OHZ
OH
t
RC
000 0ns
35 40 50 50 ns
UNITMIN MAX MIN MAX MIN MAX MIN MAX
t
CE
CE
t
OE
OE
V
IH
WE
DATA I/O
HIGH Z
t
OLZ
t
LZ
DATA VALID
NOTES:
min., tHZ, t
4. t
LZ
, OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
CE
min. and t
OLZ
are periodically sampled and not 100% tested, tHZ and t
OHZ
5. For faster 256k products, refer to X28VC256 product line.
t
OH
DATA VALID
t
AA
are measured with CL = 5pF, from the point when
OHZ
t
HZ
t
OHZ
12
FN8108.2
May 7, 2007
X28HC256
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Write Cycle Limits
TYP
PARAMETER SYMBOL MIN
Write Cycle Time tWC (Note 7) 3 5 ms Address Setup Time t Address Hold Time t Write Setup Time t Write Hold Time t
Pulse Width t
CE OE HIGH Setup Time t
HIGH Hold Time t
OE
Pulse Width t
WE WE HIGH Recovery (page write only) t
WPH
Data Valid t Data Setup t Data Hold t Delay to Next Write After Polling is True t
DW
Byte Load Cycle t
AS
AH
CS
CH
CW
OES
OEH
WP
(Note 8) 50 ns
DV
DS
DH
(Note 8) 10 µs
BLC
0ns
50 ns
0ns 0ns
50 ns
0ns 0ns
50 ns
50 ns
0ns
0.15 100 µs
NOTES:
6. Typical values are for T is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device
7. t
WC
= +25°C and nominal supply voltage.
A
requires to automatically complete the internal write operation.
and tDW are periodically sampled and not 100% tested.
8. t
WPH
(Note 6) MAX UNIT
s
WE Controlled Write Cycl e
ADDRESS
CE
OE
WE
DATA IN
DATA OUT
t
WC
t
AS
t
CS
t
OES
t
AH
t
CH
t
DATA VALID
t
DS
OEH
HIGH Z
t
DH
t
WP
13
FN8108.2
May 7, 2007
CE Controlled Write Cycle
www.BDTIC.com/Intersil
ADDRESS
CE
t
OES
OE
WE
X28HC256
t
WC
t
AS
t
CS
t
AH
t
CW
t
OEH
t
CH
t
DS
DATA VALID
t
DH
DATA IN
DATA OUT
HIGH Z
Page Write Cycle
OE
(NOTE 9)
CE
t
WP
WE
ADDRESS
(NOTE 10)
I/O
*For each successive write within the page write operation, A7 to A
t
WPH
BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n + 1 BYTE n + 2
writes to an unknown address could occur.
NOTES:
9. Between successive byte writes within a page write operation, OE
data from another memory device within the system for the next write; or with WE
10. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the or WE controlled write cycle timing.
CE
t
BLC
LAST BYTE
t
WC
should be the same or
15
can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
HIGH and CE LOW effectively performing a polling operation.
14
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
DATA Polling Timing Diagram
ADDRESS A
CE
WE
OE
I/O
7
Toggle Bit Timing Diagram
CE
n
DIN = X
(Note 11)
(Note 11)
t
OEH
A
n
D
= X D
OUT
t
WC
A
n
t
OES
t
DW
= X
OUT
WE
t
OEH
OE
I/O
6
HIGH Z
*
t
WC
* I/O6 beginning and ending state will vary, depending upon actual tWC.
NOTE:
11. Polling operations are by definition read cycles and are therefore subject to read cycle timings.
t
OES
t
DW
*
15
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Ceramic Dual-In-Line Frit Seal Packages (CERDIP)
LEAD FINISH
c1
-A-
-B-
bbb C A - B
S
BASE
PLANE
SEATING
PLANE
S1
b2
b
ccc C A - BMD
D
A
A
e
S
S
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat­ed adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass overrun.
6. Dimension Q shall be measured from the seating plane to the base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
-D-
BASE
E
D
S
S
Q
A
-C-
L
METAL
b1
M
(b)
SECTION A-A
α
(c)
M
eA
eA/2
aaa CA - B
M
c
D
S
S
F28.6 MIL-STD-1835 GDIP1-T28 (D-10, CONFIGURATION A)
28 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
INCHES MILLIMETERS
SYMBOL
A - 0.232 - 5.92 -
b 0.014 0.026 0.36 0.66 2
b1 0.014 0.023 0.36 0.58 3
b2 0.045 0.065 1.14 1.65 -
b3 0.023 0.045 0.58 1.14 4
c 0.008 0.018 0.20 0.46 2
c1 0.008 0.015 0.20 0.38 3
D - 1.490 - 37.85 5
E 0.500 0.610 12.70 15.49 5
e 0.100 BSC 2.54 BSC -
eA 0.600 BSC 15.24 BSC -
eA/2 0.300 BSC 7.62 BSC -
L 0.125 0.200 3.18 5.08 -
Q 0.015 0.060 0.38 1.52 6
S1 0.005 - 0.13 - 7
o
α
90
105
o
90
o
105
aaa - 0.015 - 0.38 -
bbb - 0.030 - 0.76 -
ccc - 0.010 - 0.25 -
M - 0.0015 - 0.038 2, 3
N28 288
NOTESMIN MAX MIN MAX
o
Rev. 0 4/94
-
16
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Plastic Leaded Chip Carrier Packages (PLCC)
0.042 (1.07)
0.048 (1.22)
NE
0.020 (0.51) MAX 3 PLCS
PIN (1) IDENTIFIER
C
L
D1
D
0.050 (1.27)
MIN
0.025 (0.64) MIN
0.042 (1.07)
0.056 (1.42)
0.050 (1.27) TP
ND
E1
VIEW “A” TYP.
C
L
E
0.026 (0.66)
0.032 (0.81)
0.013 (0.33)
0.021 (0.53)
(0.12)
0.005
0.004 (0.10) C
0.025 (0.64)
0.045 (1.14)
R
N32.45x55 (JEDEC MS-016AE ISSUE A)
32 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE
INCHES MILLIMETERS
SYMBOL
NOTESMIN MAX MIN MAX
A 0.125 0.140 3.18 3.55 -
D2/E2
A1 0.060 0.095 1.53 2.41 -
D 0.485 0.495 12.32 12.57 -
D1 0.447 0.453 11.36 11.50 3
D2/E2
VIEW “A”
D2 0.188 0.223 4.78 5.66 4, 5
E 0.585 0.595 14.86 15.11 -
E1 0.547 0.553 13.90 14.04 3
E2 0.238 0.273 6.05 6.93 4, 5
0.015 (0.38)
-C-
MIN
SEATING PLANE
A1
A
N28 286
ND 7 7 7
NE 9 9 7
Rev. 0 7/98
NOTES:
1. Controlling dimension: INCH. Converted millimeter dimen­sions are not necessarily exact.
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
3. Dimensions D1 and E1 do not include mold protrusions. Al­lowable mold protrusion is 0.010 inch (0.25mm) per side. Dimensions D1 and E1 include mold mismatch and are mea­sured at the extreme material condition at the body parting
M
DS
- B SAS
line.
4. To be measured at seating plane contact point.
-C-
5. Centerline to be determined where center leads exit plastic body.
6. “N” is the number of terminal positions.
7. ND denotes the number of leads on the two shorts sides of the package, one of which contains pin #1. NE denotes the num­ber of leads on the two long sides of the package.
17
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Ceramic Pin Grid Array Package (CPGA)
12 13 15 17 18
11 10 14 16 19
9 8 20 21
7 6 22 23
5 2 28 24 25
4 3 1 27 26
Typ. 0.100 (2.54 )
All Leads
Pin 1 Index
0.080 (2.03)
0.070 (1.78)
G28.550x650A 28 LEAD CERAMIC PIN GRID ARRAY PACKAGE
A
A
NOTE: Leads 4, 12, 18, and 26
0.080 (2.03) 4 Corners
0.070 (1.78)
0.008 (0.20)
0.050 (1.27)
0.110 (2.79)
0.090 (2.29)
0.072 (1.83)
0.062 (1.57)
0.660 (16.76)
0.640 (16.26)
A
A
0.561 (14.25)
0.541 (13.75)
NOTE: All dimensions in inches (in parentheses in millimeters).
0.020 (0.51)
0.016 (0.41)
0.185 (4.70)
0.175 (4.44)
Rev. 0 12/05
18
FN8108.2
May 7, 2007
Small Outline Package Family (SO)
www.BDTIC.com/Intersil
A
D
NN
(N/2)+1
X28HC256
h X 45°
PIN #1
E
C
SEATING PLANE
0.004 C
E1
B
0.010 BM CA
I.D. MARK
1
e
0.010 BM CA
(N/2)
c
SEE DETAIL “X”
L1
H
A2
GAUGE PLANE
A1
b
DETAIL X
L
4° ±4°
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SO16
SYMBOL
A 0.068 0.068 0.068 0.104 0.104 0.104 0.104 MAX -
A1 0.006 0.006 0.006 0.007 0.007 0.007 0.007 ±0.003 -
A2 0.057 0.057 0.057 0.092 0.092 0.092 0.092 ±0.002 -
b 0.017 0.017 0.017 0.017 0.017 0.017 0.017 ±0.003 -
c 0.009 0.009 0.009 0.011 0.011 0.011 0.011 ±0.001 -
D 0.193 0.341 0.390 0.406 0.504 0.606 0.704 ±0.004 1, 3
E 0.236 0.236 0.236 0.406 0.406 0.406 0.406 ±0.008 -
E1 0.154 0.154 0.154 0.295 0.295 0.295 0.295 ±0.004 2, 3
e 0.050 0.050 0.050 0.050 0.050 0.050 0.050 Basic -
L 0.025 0.025 0.025 0.030 0.030 0.030 0.030 ±0.009 -
L1 0.041 0.041 0.041 0.056 0.056 0.056 0.056 Basic -
h 0.013 0.013 0.013 0.020 0.020 0.020 0.020 Reference -
N 8 14 16 16 20 24 28 Reference -
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
(0.150”)
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE NOTESSO-8 SO-14
A
0.010
Rev. M 2/07
19
FN8108.2
May 7, 2007
Dual-In-Line Plastic Packages (PDIP)
www.BDTIC.com/Intersil
X28HC256
N
D1
-C-
E1
-B-
A1
A2
E
A
L
e
C
C
L
e
A
C
e
B
INDEX
AREA
BASE
PLANE
SEATING
PLANE
D1
B1
12 3 N/2
-A­D
e
B
0.010 (0.25) C AM BS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E and are measured with the leads constrained to be perpendic-
7. e
e
A
ular to datum .
and eC are measured at the lead tips with the leads unconstrained.
B
e
must be zero or greater.
C
-C-
8. B1 maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
E28.6 (JEDEC MS-011-AB ISSUE B)
28 LEAD DUAL-IN-LINE PLASTIC PACKAGE
INCHES MILLIMETERS
SYMBOL
A - 0.250 - 6.35 4
A1 0.015 - 0.39 - 4
A2 0.125 0.195 3.18 4.95 -
B 0.014 0.022 0.356 0.558 -
B1 0.030 0.070 0.77 1.77 8
C 0.008 0.015 0.204 0.381 -
D 1.380 1.565 35.1 39.7 5
D1 0.005 - 0.13 - 5
E 0.600 0.625 15.24 15.87 6
E1 0.485 0.580 12.32 14.73 5
e 0.100 BSC 2.54 BSC -
e
A
e
B
0.600 BSC 15.24 BSC 6
- 0.700 - 17.78 7
L 0.115 0.200 2.93 5.08 4
N28 289
NOTESMIN MAX MIN MAX
Rev. 1 12/00
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implic atio n or other wise u nde r any p a tent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
20
FN8108.2
May 7, 2007
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