The X28HC256 is a second generation high performance
CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s
proprietary, textured poly floating gate technology, providing
a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation,
effectively providing a 24µs/byte write cycle, and enabling
the entire memory to be typically rewritten in less than 0.8
seconds. The X28HC256 also features DATA
Toggle Bit Polling, two methods of providing early end of
write detection. The X28HC256 also supports the JEDEC
standard Software Data Protection feature for protecting
against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum
1,000,000 write cycles per byte and an inherent data
retention of 100 years.
Polling and
FN8108.2
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write
™
- Endurance: 1,000,000 cycles
- Data retention: 100 years
P-P
cell
control circuits
Block Diagram
A0 TO A
ADDRESS
INPUTS
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free plus anneal available (RoHS compliant)
256kBIT
X BUFFERS
LATCHES AND
DECODER
14
Y BUFFERS
LATCHES AND
DECODER
CE
OE
WE
CONTROL
LOGIC AND
TIMING
EEPROM
ARRAY
I/O BUFFERS
AND LATCHES
I/O0 TO I/O
DATA INPUTS/OUTPUTS
7
V
CC
V
SS
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2006, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
Ordering Information
www.BDTIC.com/Intersil
X28HC256
ACCESS TIME
PART NUMBERPART MARKING
X28HC256DI-15X28HC256DI-15 RR150-40 to +8528 Ld CERDIPF28.6
X28HC256DM-15X28HC256DM-15 RR-55 to +12528 Ld CERDIPF28.6
X28HC256DMB-15C X28HC256DMB-15MIL-STD-88328 Ld CERDIPF28.6
X28HC256EMB-15C X28HC256EMB-15MIL-STD-88332 Ld LCC (458 mils)
X28HC256FMB-15C X28HC256FMB-15MIL-STD-88328 Ld FLATPACK (440 mils)
X28HC256J-15*, **X28HC256J-15 RR0 to +7032 Ld PLCCN32.45x55
X28HC256JZ-15* (Note)X28HC256J-15 ZRR0 to +7032 Ld PLCC (Pb-free)N32.45x55
X28HC256JI-15*, **X28HC256JI-15 RR-40 to +8532 Ld PLCCN32.45x55
X28HC256JIZ-15* (Note)X28HC256JI-15 ZRR-40 to +8532 Ld PLCC (Pb-free)N32.45x55
X28HC256JM-15*X28HC256JM-15 RR-55 to +12532 Ld PLCCN32.45x55
X28HC256KI-15X28HC256KI-15 RR-40 to +8528 Ld PGA G28.550x650A
X28HC256KM-15X28HC256KM-15 RR-55 to +12528 Ld PGA G28.550x650A
X28HC256KMB-15C X28HC256KMB-15MIL-STD-88328 Ld PGA G28.550x650A
X28HC256P-15X28HC256P-15 RR0 to +7028 Ld PDIPE28.6
X28HC256PZ-15 (Note)X28HC256P-15 RRZ0 to +7028 Ld PDIP (Pb-free)***E28.6
X28HC256PI-15X28HC256PI-15 RR-40 to +8528 Ld PDIPE28.6
X28HC256PIZ-15 (Note)X28HC256PI-15 RRZ-40 to +8528 Ld PDIP (Pb-free)***E28.6
X28HC256PM-15X28HC256PM-15 RR-55 to +12528 Ld PDIPE28.6
X28HC256SI-15*X28HC256SI-15 RR-40 to +8528 Ld SOIC (300 mil)MDP0027
X28HC256SIZ-15* (Note)X28HC256SI-15 RRZ-40 to +8528 Ld SOIC (300 mil) (Pb-free)MDP0027
X28HC256SM-15X28HC256SM-15 RR-55 to +12528 Ld SOIC (300 mil)MDP0027
X28HC256D-12X28HC256D-12 RR1200 to +7028 Ld CERDIP (520 mils)F28.6
X28HC256DI-12X28HC256DI-12 RR-40 to +8528 Ld CERDIP (520 mils)F28.6
X28HC256DM-12X28HC256DM-12 RR-55 to +12528 Ld CERDIP (520 mils)F28.6
X28HC256DMB-12C X28HC256DMB-12MIL-STD-88328 Ld CERDIP (520 mils)F28.6
X28HC256EI-12X28HC256EI-12 RR-40 to +8532 Ld LCC (458 mils)
X28HC256EM-12X28HC256EM-12 RR-55 to +12532 Ld LCC (458 mils)
X28HC256EMB-12C X28HC256EMB-12MIL-STD-88332 Ld LCC (458 mils)
X28HC256FMB-12C X28HC256FMB-12MIL-STD-88328 Ld FLATPACK (440 mils)
X28HC256J-12*X28HC256J-12 RR0 to +7032 Ld PLCCN32.45x55
X28HC256JZ-12* (Note)X28HC256J-12 ZRR0 to +7032 Ld PLCC (Pb-free)N32.45x55
X28HC256JI-12*X28HC256JI-12 RR-40 to +8532 Ld PLCCN32.45x55
X28HC256JIZ-12* (Note)X28HC256JI-12 ZRR-40 to +8532 Ld PLCC (Pb-free)N32.45x55
X28HC256KI-12X28HC256KI-12 RR-40 to +8528 Ld PGA G28.550x650A
X28HC256KM-12X28HC256KM-12 RR-55 to +12528 Ld PGA G28.550x650A
X28HC256KMB-12C X28HC256KMB-12MIL-STD-88328 Ld PGA G28.550x650A
X28HC256P-12X28HC256P-12 RR0 to +7028 Ld PDIPE28.6
X28HC256PZ-12 (Note)X28HC256P-12 RRZ0 to +7028 Ld PDIP (Pb-free)***E28.6
X28HC256PI-12X28HC256PI-12 RR-40 to +8528 Ld PDIPE28.6
(ns)
TEMP. RANGE
(°C)PACKAGEPKG. DWG. #
2
FN8108.2
May 7, 2007
Ordering Information (Continued)
www.BDTIC.com/Intersil
X28HC256
ACCESS TIME
PART NUMBERPART MARKING
X28HC256PIZ-12 (Note)X28HC256PI-12 RRZ-40 to +8528 Ld PDIP (Pb-free)***E28.6
X28HC256S-12*X28HC256S-12 RR1200 to +7028 Ld SOIC (300 mils)MDP0027
X28HC256SZ-12 (Note)X28HC256S-12 RRZ0 to +7028 Ld SOIC (300 mils) (Pb-free)MDP0027
X28HC256SI-12*X28HC256SI-12 RR-40 to +8528 Ld SOIC (300 mils)MDP0027
X28HC256SIZ-12 (Note)X28HC256SI-12 RRZ-40 to +8528 Ld SOIC (300 mils) (Pb-free)MDP0027
X28HC256SM-12*, **X28HC256SM-12 RR-55 to +12528 Ld SOIC (300 mils)MDP0027
X28HC256D-90X28HC256D-90 RR900 to +7028 Ld CERDIP (520 mils)F28.6
X28HC256DI-90X28HC256DI-90 RR-40 to +8528 Ld CERDIP (520 mils)F28.6
X28HC256DM-90X28HC256DM-90 RR-55 to +12528 Ld CERDIP (520 mils)F28.6
X28HC256DMB-90C X28HC256DMB-90MIL-STD-88328 Ld CERDIP (520 mils)F28.6
X28HC256EM-90X28HC256EM-90 RR-55 to +12532 Ld LCC (458 mils)
X28HC256EMB-90C X28HC256EMB-90MIL-STD-88332 Ld LCC (458 mils)
X28HC256FI-90X28HC256FI-90 RR-40 to +8528 Ld FLATPACK (440 mils)
X28HC256FM-90X28HC256FM-90 RR-55 to +12528 Ld FLATPACK (440 mils)
X28HC256FMB-90C X28HC256FMB-90MIL-STD-88328 Ld FLATPACK (440 mils)
X28HC256J-90*X28HC256J-90 RR0 to +7032 Ld PLCCN32.45x55
X28HC256JZ-90* (Note)X28HC256J-90 ZRR0 to +7032 Ld PLCC (Pb-free)N32.45x55
X28HC256JI-90*X28HC256JI-90 RR-40 to +8532 Ld PLCCN32.45x55
X28HC256JIZ-90* (Note)X28HC256JI-90 ZRR-40 to +8532 Ld PLCC (Pb-free)N32.45x55
X28HC256JM-90*X28HC256JM-90 RR-55 to +12532 Ld PLCCN32.45x55
X28HC256KM-90X28HC256KM-90 RR-55 to +12528 Ld PGA G28.550x650A
X28HC256KMB-90C X28HC256KMB-90MIL-STD-88328 Ld PGA G28.550x650A
X28HC256P-90X28HC256P-90 RR900 to +7028 Ld PDIPE28.6
X28HC256PZ-90 (Note)X28HC256P-90 RRZ0 to +7028 Ld PDIP (Pb-free)***E28.6
X28HC256PI-90X28HC256PI-90 RR-40 to +8528 Ld PDIPE28.6
X28HC256PIZ-90 (Note)X28HC256PI-90 RRZ-40 to +8528 Ld PDIP (Pb-free)**E28.6
X28HC256S-90*X28HC256S-90 RR0 to +7028 Ld SOIC (300 mils)MDP0027
X28HC256SI-90*X28HC256SI-90 RR-40 to +8528 Ld SOIC (300 mils)MDP0027
X28HC256SIZ-90 (Note)X28HC256SI-90 RRZ-40 to +8528 Ld SOIC (300 mils) (Pb-free)MDP0027
X28HC256SI-20T1200-40 to +8528 Ld SOIC (300 mils) Tape and ReelMDP0027
*Add "T1" suffix for tape and reel.
**Add "T2" suffix for tape and reel.
***Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
(ns)
TEMP. RANGE
(°C)PACKAGEPKG. DWG. #
3
FN8108.2
May 7, 2007
Pinouts
www.BDTIC.com/Intersil
A
A
I/O
I/O
I/O
14
12
A
A
A
A
A
A
A
A
SS
7
6
5
4
3
2
1
0
0
1
2
X28HC256
TOP VIEW
1
2
3
4
5
6
7
X28HC256
8
9
10
11
12
13
14
28
V
CC
27
WE
A
26
13
A8
25
A
24
9
A
23
11
22
OE
A
10
CE
I/O
I/O6
I/O
I/O
I/O3
7
5
4
21
20
19
18
17
16
15
(28 LD CERDIP, FLATPACK, PDIP, SOIC)
V
Pin Descriptions
X28HC256
(32 LD PLCC, LCC)
7
A
4 3 2 1 32 31 30
5
A
6
A
6
5
7
A
4
A3
8
9
A
2
A
10
1
11
A
0
12
NC
13
I/O
0
14 15 16 17 18 19 20
I/O1
X28HC256
TOP VIEW
14
V
NC
A12A
X28HC256
2
SS
I/O
I/O
NC
V
CC
3
WE
4
I/O
X28HC256
(28 LD PGA)
BOTTOM VIEW
13
A
A8
29
A
28
9
27
A
11
NC
26
OE
25
A
24
10
23
CE
I/O
22
7
21
I/O
6
5
I/O
12
11
I/O
I/O
A
9
A
7
A
5
A
4
1
0
8 A
1
6 A
3
2 A12
5
6
I/O
2
13
A0
10
2
X28HC256
4
A
7
3
15
14
28
1
I/O
VSS
V
CC
A
14
I/O
I/O
3
5
I/O4
CE
OE
A
9
WE
6
18
I/O
7
19
A
10
21
A
11
23
A
8
25
A
13
26
17
16
20
22
24
27
Addresses (A0 to A14)
The Address inputs select an 8-bit memory location during a
read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/write
operations. When CE
is HIGH, power consumption is
reduced.
Output Enable (OE)
The Output Enable input controls the d ata output buffers,
and is used to initiate read operations.
Data In/Data Out (I/O0 to I/O7)
Data is written to or read from the X28HC256 through the I/O
pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28HC256.
4
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Pin Names
SYMBOLDESCRIPTION
to A
A
0
14
I/O0 to I/O
7
WE
CE
OEOutput Enable
V
CC
V
SS
NCNo Connect
Address Inputs
Data Input/Output
Write Enable
Chip Enable
+5V
Ground
Device Operation
Read
Read operations are initiated by both OE and CE LOW. The
read operation is terminated by either CE
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in
a high impedance state when either OE
Write
Write operations are initiated when both CE and WE are
LOW and OE
and WE
by the falling edge of either CE
is HIGH. The X28HC256 supports both a CE
controlled write cycle. That is, the address is latched
or WE, whichever occurs
last. Similarly, the data is latched internally by the rising edge
of either CE
or WE, whichever occurs first. A byte write
operation, once initiated, will automatically continue to
completion, typically within 3ms.
Page Write Operation
The page write feature of the X28HC256 allows the entire
memory to be written in typically 0.8 seconds. Page write
allows up to one hundred twenty-eight bytes of data to be
consecutively written to the X28HC256, prior to the
commencement of the internal programming cycle. The host
can fetch data from another device within the system during
a page write operation (change the source address), but the
page address (A
write cycle to the part during this operation must be the same
as the initial page address.
through A14) for each subsequent valid
7
or OE returning
or CE is HIGH.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to one hundred twenty-seven bytes in
the same manner as the first byte was written. Each
successive byte load cycle, started by the WE
HIGH to LOW
transition, must begin within 100µs of the falling edge of the
preceding WE
. If a subsequent WE HIGH to LOW transition
is not detected within 100µs, the internal automatic
programming cycle will commence. There is no page write
window limitation. Effectively the page write window is
infinitely wide, so long as the host continues to access the
device within the byte load cycle time of 100µs.
Write Operation Status Bits
The X28HC256 provides the user two write operation status
bits. These can be used to optimize a system write cycle
time. The status bits are mapped onto the I/O bus as shown
in Figure 1.
5TBDP43210I/O
RESERVED
TOGGLE BIT
DATA
POLLING
FIGURE 1. STATUS BIT ASSIGNMENT
DATA Polling (I/O7)
The X28HC256 features DA T A Polling as a method to indicate
to the host system that the byte write or page write cycle has
completed. DATA
Polling allows a simple bit test operation to
determine the status of the X28HC256. This eliminates
additional interrupt inputs or external hardware. During the
internal programming cycle, any attempt to read the last byte
written will produce the complement of that data on I/O
(i.e.,
7
write data = 0xxx xxxx, read data = 1xxx xxxx). Once the
programming cycle is complete, I/O
will reflect true data.
7
Toggle Bit (I/O6)
The X28HC256 also provides another method for
determining when the internal write cycle is complete. During
the internal programming cycle I/O
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease, and the device will be accessible for additional read
and write operations.
will toggle from HIGH to
6
5
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
DATA Polling I/O
WRITE
WE
CE
OE
I/O
7
A0 TO A
14
WRITE DATA
7
LAST
V
IH
AnAnAnAnAnAn
HIGH Z
V
OL
An
FIGURE 2. DATA POLLING BUS SEQUENCE
DATA Polling can effectively halve the time for writing to the
X28HC256. The timing diagram in Figure 2 illustrates the
sequence of events on the bus. The software flow diagram in
Figure 3 illustrates one method of implementing the routine.
V
OH
X28HC256
READY
WRITES
COMPLETE?
YES
SAVE LAST DATA
AND ADDRESS
READ LAST
ADDRESS
IO
7
COMPARE?
YES
X28HC256
READY
NO
NO
FIGURE 3. DATA POLLING SOFTWARE FLOW
6
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
The Toggle Bit I/O
LAST
WRITE
WE
CE
OE
I/O
6
¬
LAST WRITE
LOAD ACCUM
FROM ADDR n
6
YES
V
*
OH
V
OL
* I/O6 Beginning and ending state of I/O6 will vary.
FIGURE 4. TOGGLE BIT BUS SEQUENCE
HIGH Z
*
X28C512, X28C513
READY
Hardware Data Protection
The X28HC256 provides two hardware features that protect
nonvolatile data from inadvertent writes.
• Default V
is 3.5V typically.
V
CC
• Write Inhibit—Holding either OE
HIGH will prevent an inadvertent write cycle during powerup and power-down, maintaining data integrity.
Sense—All write functions a re inhi bite d when
CC
LOW, WE HIGH, or CE
COMPARE
ACCUM WITH
ADDR n
COMPARE
OK?
YES
X28C256
READY
FIGURE 5. TOGGLE BIT SOFTWARE FLOW
NO
The Toggle Bit can eliminate the chore of saving and fetching
the last address and data in order to implement DATA
Polling.
This can be especially helpful in an array comprised of
multiple X28HC256 memories that is frequently updated.
The timing diagram in Figure 4 illustrates the sequence of
events on the bus. The software flow diagram in Figure 5
illustrates a method for polling the Toggle Bit.
Software Data Protection
The X28HC256 offers a software-controlled data protection
feature. The X28HC256 is shipped from Intersil with the
software data protection NOT ENABLED; that is, the device
will be in the standard operating mode. In this mode data
should be protected during power-up/down operations
through the use of external circuits. The host would then
have open read and write access of the device once V
was stable.
The X28HC256 can be automatically protected during
power-up and power-down (without the need for external
circuits) by employing the software data protection feature.
The internal software data protection circuit is enabled after
the first write operation, utilizing the software algorithm. This
circuit is nonvolatile, and will remain set for the life of the
device unless the reset command is issued.
Once the software protection is enabled, the X28HC256 is
also protected from inadvertent and accidental writes in the
powered-up state. That is, the software algorithm must be
issued prior to writing additional data to the device.
CC
7
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Software Algorithm
Selecting the software data protection mode requires the
host system to precede data write operations by a series of
three write operations to three specific addresses. Refer to
Figure 6 and 7 for the sequence. The three-byte sequence
Software Data Protection
V
CC
0V
DATA
ADDRESS
CE
WE
WRITE DATA AA
TO ADDRESS
5555
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA A0
TO ADDRESS
5555
WRITE DATA XX
TO ANY
ADDRESS
WRITE LAST
BYTE TO
LAST ADDRESS
AAA
5555
55
2AAA
FIGURE 6. TIMING SEQUENCE—BYTE OR PAGE WRITE
BYTE/PAGE
LOAD ENABLED
OPTIONAL
BYTE/PAGE
LOAD OPERATION
A0
5555
opens the page write window, enabling the host to write from
one to one hundred twenty-eight bytes of data. Once the
page load cycle has been completed, the device will
automatically be returned to the data protected state.
≤t
BLC MAX
WRITES
OK
BYTE
OR
AGE
t
WC
WRITE
PROTECTED
Regardless of whether the device has previously been
protected or not, once the software data protection algorithm
is used and data has been written, the X28HC256 will
automatically disable further writes unless another command
is issued to cancel it. If no further commands are issued the
X28HC256 will be write protected during power-down and
after any subsequent power-up.
Note: Once initiated, the sequence of write operations
should not be interrupted.
(VCC)
AFTER t
RE-ENTERS DATA
PROTECTED STATE
WC
FIGURE 7. WRITE SEQUENCE FOR SOFTWARE DATA
8
FN8108.2
May 7, 2007
Resetting Software Data Protection
www.BDTIC.com/Intersil
V
CC
X28HC256
DATA
ADDRESS
CE
WE
AAA
5555
55
2AAA
FIGURE 8. RESET SOFTWARE DATA PROTECTION TIMING SEQUENCE
80
5555
AA
5555
55
2AAA
20
5555
Note: Once initiated, the sequence of write operations
WRITE DATA AA
TO ADDRESS
5555
should not be interrupted.
SYSTEM CONSIDERATIONS
Because the X28HC256 is frequently used in large memory
WRITE DATA 55
TO ADDRESS
2AAA
arrays, it is provided with a two line control architecture for
both read and write operations. Proper usage can provide
the lowest possible power dissipation, and eliminate the
possibility of contention where multiple I/O pins share the
same bus.
WRITE DATA 80
TO ADDRESS
5555
To gain the most benefit, it is recommended that CE
decoded from the address bus and be used as the primary
device selection input. Both OE
common among all devices in the array. For a read
WRITE DATA AA
TO ADDRESS
5555
operation, this assures that all deselected devices are in
their standby mode, and that only the selected device(s)
is/are outputting data on the bus.
t
WC
and WE would then be
STANDARD
OPERATING
MODE
be
WRITE DATA 55
TO ADDRESS
2AAA
WRITE DATA 20
TO ADDRESS
5555
AFTER tWC,
RE-ENTERS
UNPROTECTED
STATE
FIGURE 9. WRITE SEQUENCE FOR RESETTING SOFTWARE
In the event the user wants to deactivate the software data
protection feature for testing or reprogramming in an
EEPROM programmer, the following six step algorithm will
reset the internal protection circuit. After t
, the X28HC256
WC
will be in standard operating mode.
Because the X28HC256 has two power modes, standby and
active, proper decoupling of the memory array is of prime
concern. Enabling CE
will cause transient current spikes.
The magnitude of these spikes is dependent on the output
capacitive loading of the l/Os. Therefore, the larger the array
sharing a common bus, the larger the transient spikes. The
voltage peaks associated with the current transients can be
suppressed by the proper selection and placement of
decoupling capacitors. As a minimum, it is recommended that
a 0.1µF high frequency ceramic capacitor be used between
V
and VSS at each device. Depending on the size of the
CC
array, the value of the capacitor may have to be larger.
In addition, it is recommended that a 4.7µF electrolytic bulk
capacitor be placed between V
and VSS for each eight
CC
devices employed in the array. This bulk capacitor is
employed to overcome the voltage droop caused by the
inductive effects of the PC board traces.
9
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Absolute Maximum RatingsThermal Information
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical SpecificationsOver Recommended Operating Conditions, Unless Otherwise Specified.
PARAMETERSYMBOLTEST CONDITIONS
VCC Active Current
(TTL Inputs)
V
Standby Current
CC
(TTL Inputs)
Standby Current
V
CC
(CMOS Inputs)
Input Leakage CurrentI
Output Leakage CurrentI
Input LOW VoltageV
Input HIGH VoltageV
Output LOW VoltageV
Output HIGH VoltageV
NOTES:
1. Typical values are for T
min. and VIH max. are for reference only and are not tested.
2. V
IL
A
I
CC
I
SB1
I
SB2
(Note 2)-10.8V
lL
(Note 2)2VCC + 1V
IH
CE = OE = VIL, WE = VIH, All I/O’s = open,
address inputs = .4V/2.4V levels @ f = 10MHz
CE = VIH, OE = VIL, All I/O’s = open, other inputs = V
CE = VCC - 0.3V , OE = GND, All I/Os = open, other
inputs = V
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
*Pb-free PDIPs can be used for through hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
LIMITS
TYP
(Note 7)MAX
3060mA
IH
12mA
200500µA
10µA
IH
10µA
UNITMIN
Power-up Timing
PARAMETERSYMBOLMAXUNIT
Power-up to readt
Power-up to writet
, Note 3100µs
PUR
, Note 35ms
PUW
NOTE:
3. This parameter is periodically sampled and not 100% tested.
10
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
CapacitanceT
SYMBOLTESTCONDITIONSMAXUNIT
C
(Note 9)Input/output capacitanceV
I/O
(Note 9)Input capacitanceVIN = 0V6pF
C
IN
= +25°C, f = 1MHz, VCC = 5V.
A
= 0V10pF
I/O
Endurance and Data Retention
PARAMETERMINMAXUNIT
Endurance1,000,000Cycles
Data retention100Years
AC Conditions of Test
Input pulse levels0V to 3V
Input rise and fall times5ns
Input and output timing levels1.5V
Mode Selection
CEOEWEMODEI/OPOWER
LLHReadD
LHLWriteDINactive
HXXSt andby and write
inhibit
XLXWrite inhibit——
XXHWrite inhibit——
OUT
High Zstandby
active
Symbol Table
WAVEFORMINPUTSOUTPUTS
Must be
steady
May change
from LOW
to HIGH
May change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
N/ACenter Line
Will be
steady
Will change
from LOW
to HIGH
Will change
from HIGH
to LOW
Changing:
State Not
Known
is High
Impedance
Equivalent AC Load Circuit
5V
1.92kΩ
OUTPUT
1.37kΩ
30pF
11
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
AC Electrical SpecificationsOver Recommended Operating Conditions, Unless Otherwise Specified.
, OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
CE
min. and t
OLZ
are periodically sampled and not 100% tested, tHZ and t
OHZ
5. For faster 256k products, refer to X28VC256 product line.
t
OH
DATA VALID
t
AA
are measured with CL = 5pF, from the point when
OHZ
t
HZ
t
OHZ
12
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Write Cycle Limits
TYP
PARAMETERSYMBOLMIN
Write Cycle TimetWC (Note 7)35ms
Address Setup Timet
Address Hold Timet
Write Setup Timet
Write Hold Timet
Pulse Widtht
CE
OE HIGH Setup Timet
HIGH Hold Timet
OE
Pulse Widtht
WE
WE HIGH Recovery (page write only)t
WPH
Data Validt
Data Setupt
Data Holdt
Delay to Next Write After Polling is Truet
DW
Byte Load Cyclet
AS
AH
CS
CH
CW
OES
OEH
WP
(Note 8)50ns
DV
DS
DH
(Note 8)10µs
BLC
0ns
50ns
0ns
0ns
50ns
0ns
0ns
50ns
50ns
0ns
0.15100µs
NOTES:
6. Typical values are for T
is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device
7. t
WC
= +25°C and nominal supply voltage.
A
requires to automatically complete the internal write operation.
and tDW are periodically sampled and not 100% tested.
8. t
WPH
(Note 6)MAXUNIT
1µs
WE Controlled Write Cycl e
ADDRESS
CE
OE
WE
DATA IN
DATA OUT
t
WC
t
AS
t
CS
t
OES
t
AH
t
CH
t
DATA VALID
t
DS
OEH
HIGH Z
t
DH
t
WP
13
FN8108.2
May 7, 2007
CE Controlled Write Cycle
www.BDTIC.com/Intersil
ADDRESS
CE
t
OES
OE
WE
X28HC256
t
WC
t
AS
t
CS
t
AH
t
CW
t
OEH
t
CH
t
DS
DATA VALID
t
DH
DATA IN
DATA OUT
HIGH Z
Page Write Cycle
OE
(NOTE 9)
CE
t
WP
WE
ADDRESS
(NOTE 10)
I/O
*For each successive write within the page write operation, A7 to A
t
WPH
BYTE 0BYTE 1BYTE 2BYTE nBYTE n + 1BYTE n + 2
writes to an unknown address could occur.
NOTES:
9. Between successive byte writes within a page write operation, OE
data from another memory device within the system for the next write; or with WE
10. The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the
or WE controlled write cycle timing.
CE
t
BLC
LAST BYTE
t
WC
should be the same or
15
can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
HIGH and CE LOW effectively performing a polling operation.
14
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
DATA Polling Timing Diagram
ADDRESSA
CE
WE
OE
I/O
7
Toggle Bit Timing Diagram
CE
n
DIN = X
(Note 11)
(Note 11)
t
OEH
A
n
D
= XD
OUT
t
WC
A
n
t
OES
t
DW
= X
OUT
WE
t
OEH
OE
I/O
6
HIGH Z
*
t
WC
* I/O6 beginning and ending state will vary, depending upon actual tWC.
NOTE:
11. Polling operations are by definition read cycles and are therefore subject to read cycle timings.
t
OES
t
DW
*
15
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Ceramic Dual-In-Line Frit Seal Packages (CERDIP)
LEAD FINISH
c1
-A-
-B-
bbbC A - B
S
BASE
PLANE
SEATING
PLANE
S1
b2
b
cccC A - BMD
D
A
A
e
S
S
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
-D-
BASE
E
D
S
S
Q
A
-C-
L
METAL
b1
M
(b)
SECTION A-A
α
(c)
M
eA
eA/2
aaaCA - B
M
c
D
S
S
F28.6 MIL-STD-1835 GDIP1-T28 (D-10, CONFIGURATION A)
28 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
INCHESMILLIMETERS
SYMBOL
A-0.232-5.92-
b0.0140.0260.360.662
b10.0140.0230.360.583
b20.0450.0651.141.65-
b30.0230.0450.581.144
c0.0080.0180.200.462
c10.0080.0150.200.383
D-1.490-37.855
E0.5000.61012.7015.495
e0.100 BSC2.54 BSC-
eA0.600 BSC15.24 BSC-
eA/20.300 BSC7.62 BSC-
L0.1250.2003.185.08-
Q0.0150.0600.381.526
S10.005-0.13-7
o
α
90
105
o
90
o
105
aaa-0.015-0.38-
bbb-0.030-0.76-
ccc-0.010-0.25-
M-0.0015-0.0382, 3
N28288
NOTESMINMAXMINMAX
o
Rev. 0 4/94
-
16
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Plastic Leaded Chip Carrier Packages (PLCC)
0.042 (1.07)
0.048 (1.22)
NE
0.020 (0.51) MAX
3 PLCS
PIN (1)
IDENTIFIER
C
L
D1
D
0.050 (1.27)
MIN
0.025 (0.64)
MIN
0.042 (1.07)
0.056 (1.42)
0.050 (1.27) TP
ND
E1
VIEW “A” TYP.
C
L
E
0.026 (0.66)
0.032 (0.81)
0.013 (0.33)
0.021 (0.53)
(0.12)
0.005
0.004 (0.10) C
0.025 (0.64)
0.045 (1.14)
R
N32.45x55 (JEDEC MS-016AE ISSUE A)
32 LEAD PLASTIC LEADED CHIP CARRIER PACKAGE
INCHESMILLIMETERS
SYMBOL
NOTESMINMAXMINMAX
A0.1250.1403.183.55-
D2/E2
A10.0600.0951.532.41-
D0.4850.49512.3212.57-
D10.4470.45311.3611.503
D2/E2
VIEW “A”
D20.1880.2234.785.664, 5
E0.5850.59514.8615.11-
E10.5470.55313.9014.043
E20.2380.2736.056.934, 5
0.015 (0.38)
-C-
MIN
SEATING
PLANE
A1
A
N28286
ND777
NE997
Rev. 0 7/98
NOTES:
1. Controlling dimension: INCH. Converted millimeter dimensions are not necessarily exact.
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
3. Dimensions D1 and E1 do not include mold protrusions. Allowable mold protrusion is 0.010 inch (0.25mm) per side.
Dimensions D1 and E1 include mold mismatch and are measured at the extreme material condition at the body parting
M
DS
- B SAS
line.
4. To be measured at seating plane contact point.
-C-
5. Centerline to be determined where center leads exit plastic
body.
6. “N” is the number of terminal positions.
7. ND denotes the number of leads on the two shorts sides of the
package, one of which contains pin #1. NE denotes the number of leads on the two long sides of the package.
17
FN8108.2
May 7, 2007
X28HC256
www.BDTIC.com/Intersil
Ceramic Pin Grid Array Package (CPGA)
1213151718
1110141619
982021
762223
52282425
4312726
Typ. 0.100 (2.54 )
All Leads
Pin 1 Index
0.080 (2.03)
0.070 (1.78)
G28.550x650A
28 LEAD CERAMIC PIN GRID ARRAY PACKAGE
A
A
NOTE: Leads 4, 12, 18, and 26
0.080 (2.03) 4 Corners
0.070 (1.78)
0.008 (0.20)
0.050 (1.27)
0.110 (2.79)
0.090 (2.29)
0.072 (1.83)
0.062 (1.57)
0.660 (16.76)
0.640 (16.26)
A
A
0.561 (14.25)
0.541 (13.75)
NOTE: All dimensions in inches (in parentheses in millimeters).
0.020 (0.51)
0.016 (0.41)
0.185 (4.70)
0.175 (4.44)
Rev. 0 12/05
18
FN8108.2
May 7, 2007
Small Outline Package Family (SO)
www.BDTIC.com/Intersil
A
D
NN
(N/2)+1
X28HC256
h X 45°
PIN #1
E
C
SEATING
PLANE
0.004 C
E1
B
0.010BM CA
I.D. MARK
1
e
0.010BM CA
(N/2)
c
SEE DETAIL “X”
L1
H
A2
GAUGE
PLANE
A1
b
DETAIL X
L
4° ±4°
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SO16
SYMBOL
A0.0680.0680.0680.1040.1040.1040.104MAX-
A10.0060.0060.0060.0070.0070.0070.007±0.003-
A20.0570.0570.0570.0920.0920.0920.092±0.002-
b0.0170.0170.0170.0170.0170.0170.017±0.003-
c0.0090.0090.0090.0110.0110.0110.011±0.001-
D0.1930.3410.3900.4060.5040.6060.704±0.0041, 3
E0.2360.2360.2360.4060.4060.4060.406±0.008-
E10.1540.1540.1540.2950.2950.2950.295±0.0042, 3
e0.0500.0500.0500.0500.0500.0500.050Basic-
L0.0250.0250.0250.0300.0300.0300.030±0.009-
L10.0410.0410.0410.0560.0560.0560.056Basic-
h0.0130.0130.0130.0200.0200.0200.020Reference-
N8141616202428Reference-
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
(0.150”)
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCENOTESSO-8SO-14
A
0.010
Rev. M 2/07
19
FN8108.2
May 7, 2007
Dual-In-Line Plastic Packages (PDIP)
www.BDTIC.com/Intersil
X28HC256
N
D1
-C-
E1
-B-
A1
A2
E
A
L
e
C
C
L
e
A
C
e
B
INDEX
AREA
BASE
PLANE
SEATING
PLANE
D1
B1
12 3N/2
-AD
e
B
0.010 (0.25)C AMBS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated in
JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E andare measured with the leads constrained to be perpendic-
7. e
e
A
ular to datum .
and eC are measured at the lead tips with the leads unconstrained.
B
e
must be zero or greater.
C
-C-
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
E28.6 (JEDEC MS-011-AB ISSUE B)
28 LEAD DUAL-IN-LINE PLASTIC PACKAGE
INCHESMILLIMETERS
SYMBOL
A-0.250-6.354
A10.015-0.39-4
A20.1250.1953.184.95-
B0.0140.0220.3560.558-
B10.0300.0700.771.778
C0.0080.0150.2040.381-
D1.3801.56535.139.75
D10.005-0.13-5
E0.6000.62515.2415.876
E10.4850.58012.3214.735
e0.100 BSC2.54 BSC-
e
A
e
B
0.600 BSC15.24 BSC6
-0.700-17.787
L0.1150.2002.935.084
N28289
NOTESMINMAXMINMAX
Rev. 1 12/00
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implic atio n or other wise u nde r any p a tent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
20
FN8108.2
May 7, 2007
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