intersil SPP20N65C3, SPA20N65C3, SPI20N65C3 DATA SHEET
SPP20N65C3, SPA20N65C3
j
A
j
A
j
g
SPI20N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type Package Ordering Code
SPP20N65C3 P-TO220-3-1 Q67040-S4556
SPA20N65C3 P-TO220-3-31 Q67040-S4555
SPI20N65C3 P-TO262-3-1 Q67040-S4560
in TO 220
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
VDS @ T
P-TO220-3-31
Marking
20N65C3
20N65C3
20N65C3
R
DS(on)
I
jmax
650 V
0.19 Ω
3
2
1
20.7 A
D
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=3.5A, V
D
Avalanche energy, repetitive t
I
=7A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
Symbol Value Unit
I
I
E
2)
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
V
P
D
D puls
AS
AR
R
GS
GS
tot
SPP_I
20.7
13.1
SPA
20.7
13.1
A
1)
1)
62.1 62.1 A
690 690 mJ
1 1
7 7 A
±20 ±20 V
±30 ±30
208 34.5 W
Operating and storage temperature T
Page 1
,
T
st
-55...+150 °C
2003-08-15
SPP20N65C3, SPA20N65C3
j
)
S
SPI20N65C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
V
= 480 V, I
DS
= 20.7 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T
3)
T
4)
=25°C unless otherwise specified
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA
GS
V
=0V, ID=7A - 730 -
GS
650
5)
- - V
breakdown voltage
I
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
=1000µA, V
D
VDS=600V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=13.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.54 -
GS=VD
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
-
-
-
-
0.1
-
0.16
0.43
1
100
0.19
-
µA
Ω
Page 2
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
6)
C
energy related
Effective output capacitance,
7)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
V
GS
V
DS
VDD=380V, V
I
D
R
G
VDD=380V, V
I
D
R
G
D*RDS(on)max
=13.1A
DS
=0V,
=0V to 480V
=20.7A,
=3.6Ω, T
=20.7A,
=3.6Ω
=25V,
GS
=125
j
GS
,
=0/13V,
=0/13V,
- 17.5 - S
- 2400 - pF
- 780 -
- 50 -
- 83 -
- 160 -
- 10 - ns
- 5 -
- 67 100
- 4.5 12
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
HTRB @ 1000h, 600V, T
according to JEDEC A108, MIL-STD 750/1038-1040, 1042
6
is a fixed capacitance that gives the same stored energy as C
C
o(er)
7
is a fixed capacitance that gives the same charging time as C
C
o(tr)
resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
jmax
gs
gd
g
(plateau)
V
=480V, ID=20.7A - 11 - nC
DD
- 33 -
V
=480V, ID=20.7A,
DD
=0 to 10V
V
GS
V
=480V, ID=20.7A - 5.5 - V
DD
while V
oss
while V
oss
- 87 114
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Page 3
2003-08-15
Electrical Characteristics
SPP20N65C3, SPA20N65C3
SPI20N65C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP_B SPP_B
Value Unit Symbol Value Unit
SPA SPA
min. typ. max.
T
=25°C - - 20.7 A
C
- - 62.1
V
=0V, IF=IS - 1 1.2 V
GS
V
=480V, IF=IS ,
R
/dt=100A/µs
di
F
- 500 800 ns
- 11 - µC
- 70 - A
T
=25°C - 1400 - A/µs
j
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00769 0.00769 K/W C
0.015 0.015 C
0.029 0.029 C
0.114 0.163 C
0.136 0.323 C
0.059 2.526 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0003763 0.0003763 Ws/K
0.001411 0.001411
0.001931 0.001931
0.005297 0.005297
0.012 0.008453
0.091 0.412
External Heatsink
T
case
amb
Page 4
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
1 Power dissipation
P
= f (T
tot
tot
P
240
W
200
180
160
140
120
100
80
60
40
20
)
C
SPP20N65C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
T
160
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
10
10
-2
10
DC
0
10
T
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (V
D
parameter: D = 0,
10
A
10
D
I
10
10
2
V
V
DS
10
3
10
DS
2
1
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
tp = 10 ms
DC
-2
0
10
)
T
= 25°C
C
10
1
10
2
V
V
DS
10
3
Page 5
2003-08-15
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