SPP20N65C3, SPA20N65C3
j
A
j
A
j
g
SPI20N65C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
Type Package Ordering Code
SPP20N65C3 P-TO220-3-1 Q67040-S4556
SPA20N65C3 P-TO220-3-31 Q67040-S4555
SPI20N65C3 P-TO262-3-1 Q67040-S4560
in TO 220
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
VDS @ T
P-TO220-3-31
Marking
20N65C3
20N65C3
20N65C3
R
DS(on)
I
jmax
650 V
0.19 Ω
3
2
1
20.7 A
D
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=3.5A, V
D
Avalanche energy, repetitive t
I
=7A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
Symbol Value Unit
I
I
E
2)
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
V
P
D
D puls
AS
AR
R
GS
GS
tot
SPP_I
20.7
13.1
SPA
20.7
13.1
A
1)
1)
62.1 62.1 A
690 690 mJ
1 1
7 7 A
±20 ±20 V
±30 ±30
208 34.5 W
Operating and storage temperature T
Page 1
,
T
st
-55...+150 °C
2003-08-15
SPP20N65C3, SPA20N65C3
j
)
S
SPI20N65C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
V
= 480 V, I
DS
= 20.7 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T
3)
T
4)
=25°C unless otherwise specified
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA
GS
V
=0V, ID=7A - 730 -
GS
650
5)
- - V
breakdown voltage
I
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
=1000µA, V
D
VDS=600V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=13.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.54 -
GS=VD
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
-
-
-
-
0.1
-
0.16
0.43
1
100
0.19
-
µA
Ω
Page 2
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
6)
C
energy related
Effective output capacitance,
7)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
V
GS
V
DS
VDD=380V, V
I
D
R
G
VDD=380V, V
I
D
R
G
D*RDS(on)max
=13.1A
DS
=0V,
=0V to 480V
=20.7A,
=3.6Ω, T
=20.7A,
=3.6Ω
=25V,
GS
=125
j
GS
,
=0/13V,
=0/13V,
- 17.5 - S
- 2400 - pF
- 780 -
- 50 -
- 83 -
- 160 -
- 10 - ns
- 5 -
- 67 100
- 4.5 12
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
HTRB @ 1000h, 600V, T
according to JEDEC A108, MIL-STD 750/1038-1040, 1042
6
is a fixed capacitance that gives the same stored energy as C
C
o(er)
7
is a fixed capacitance that gives the same charging time as C
C
o(tr)
resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
jmax
gs
gd
g
(plateau)
V
=480V, ID=20.7A - 11 - nC
DD
- 33 -
V
=480V, ID=20.7A,
DD
=0 to 10V
V
GS
V
=480V, ID=20.7A - 5.5 - V
DD
while V
oss
while V
oss
- 87 114
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Page 3
2003-08-15
Electrical Characteristics
SPP20N65C3, SPA20N65C3
SPI20N65C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP_B SPP_B
Value Unit Symbol Value Unit
SPA SPA
min. typ. max.
T
=25°C - - 20.7 A
C
- - 62.1
V
=0V, IF=IS - 1 1.2 V
GS
V
=480V, IF=IS ,
R
/dt=100A/µs
di
F
- 500 800 ns
- 11 - µC
- 70 - A
T
=25°C - 1400 - A/µs
j
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00769 0.00769 K/W C
0.015 0.015 C
0.029 0.029 C
0.114 0.163 C
0.136 0.323 C
0.059 2.526 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0003763 0.0003763 Ws/K
0.001411 0.001411
0.001931 0.001931
0.005297 0.005297
0.012 0.008453
0.091 0.412
External Heatsink
T
case
amb
Page 4
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
1 Power dissipation
P
= f (T
tot
tot
P
240
W
200
180
160
140
120
100
80
60
40
20
)
C
SPP20N65C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
35
W
25
tot
P
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
T
160
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
10
10
-2
10
DC
0
10
T
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (V
D
parameter: D = 0,
10
A
10
D
I
10
10
2
V
V
DS
10
3
10
DS
2
1
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
tp = 10 ms
DC
-2
0
10
)
T
= 25°C
C
10
1
10
2
V
V
DS
10
3
Page 5
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
5 Transient thermal impedance FullPAK
Z
= f (t
thJC
parameter: D =
10
K/W
10
thJC
Z
10
10
10
-1
-2
-3
1
0
10
)
p
t
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
-5
-4
-3
-2
10
10
10
10
10
-1
s
t
10
p
6 Typ. output characteristic
I
parameter: t
1
= f (VDS); T
D
80
A
60
D
50
I
40
30
20
10
0
0 5 10 15
=25°C
j
= 10 µs, V
p
20V
10V
8V
GS
V
7V
6,5V
6V
5,5V
5V
4,5V
V
25
DS
7 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
45
A
35
30
D
I
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20 22 V25
=150°C
j
= 10 µs, V
p
GS
20V
10V
7V
5.5V
4.5V
V
5V
6V
DS
8 Typ. drain-source on resistance
R
DS(on)
parameter:
R
=f(I
)
D
T
=150°C, V
j
1.5
Ω
1.3
1.2
1.1
DS(on)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0 5 10 15 20 25 30
GS
4V
4.5V
5V
5.5V
6V
6.5V
20V
A
I
40
D
Page 6
2003-08-15
SPP20N65C3, SPA20N65C3
j
SPI20N65C3
9 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 13.1 A, V
D
SPP20N65C3
1.1
Ω
0.9
0.8
DS(on)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-60 -20 20 60 100
98%
typ
= 10 V
GS
°C
10 Typ. transfer characteristics
I
= f ( VGS ); V
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
80
A
25°C
60
D
50
I
40
30
20
10
180
T
j
0
0 1 2 3 4 5 6 7
150°C
V
V
GS
9
11 Typ. gate charge
= f (Q
V
GS
parameter: I
SPP20N65C3
16
V
12
GS
10
V
8
6
4
2
0
0 20 40 60 80 100
)
Gate
= 20.7 A pulsed
D
0,2
V
DS max
0,8 V
DS max
nC
Q
140
Gate
12 Forward characteristics of body diode
I
= f (VSD)
F
parameter: T
2
SPP20N65C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
Page 7
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
13 Typ. switching time
t = f (I
par.:
), inductive load, T
D
V
=380V, VGS=0/+13V, RG=3.6Ω
DS
2
10
ns
t
1
10
tr
0
10
0 4 8 12 16
=125°C
j
td(on)
tf
td(off)
A
14 Typ. switching time
t = f (
R
), inductive load, T
G
par.:
V
10
DS
3
=380V, V
=0/+13V, ID=20.7 A
GS
ns
2
10
t
1
10
tr
tf
0
24
I
D
10
0 5 10 15 20 25 30
td(off)
=125°C
j
td(on)
Ω
R
40
G
15 Typ. drain current slope
di/dt = f(R
par.:
V
5000
A/µs
4000
3500
3000
di/dt
2500
2000
1500
1000
500
), inductive load, T
G
=380V, V
DS
di/dt(off)
0
0 5 10 15 20 25 30
=0/+13V, ID=20.7A
GS
di/dt(on)
= 125°C
j
Ω
R
16 Typ. drain source voltage slope
dv/dt = f(R
par.:
V
150
V/ns
100
dv/dt
75
50
25
40
G
0
), inductive load, T
G
=380V, V
DS
dv/dt(off)
0 5 10 15 20 25 30
=0/+13V, ID=20.7A
GS
dv/dt(on)
= 125°C
j
Ω
R
40
G
Page 8
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
17 Typ. switching losses
E = f (I
par.:
mWs
E
), inductive load, T
D
V
=380V, VGS=0/+13V, RG=3.6Ω
DS
0.08
*) Eon includes SPD06S60 diode
commutation losses
0.06
0.05
Eoff
0.04
0.03
0.02
0.01
0
0 3 6 9 12 15
=125°C
j
Eon*
A
18 Typ. switching losses
E = f(
R
), inductive load, T
G
par.:
V
=380V, V
DS
0.4
*) Eon includes SPD06S60 diode
mWs
E
21
I
D
commutation losses
0.3
0.25
0.2
0.15
0.1
0.05
0
0 5 10 15 20 25 30
=0/+13V,ID=11A
GS
Eoff
=125°C
j
Eon*
Ω
R
40
G
19 Avalanche SOA
I
= f (tAR)
AR
par.:
T
≤ 150 °C
j
7
A
6
5.5
5
4.5
AR
I
4
3.5
3
2.5
1.5
0.5
2
1
0
10
T
=125°C
j(Start)
-3
-2
10
-1
10
T
j(Start)
10 0 10 1 10
=25°C
2
µs
t
AR
10
20 Avalanche energy
E
= f (T
AS
par.: I
700
mJ
500
AS
E
400
300
200
100
4
)
j
= 3.5 A, V
D
0
20 40 60 80 100 120
= 50 V
DD
°C
T
160
j
Page 9
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
21 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (T
SPP20N65C3
785
V
745
725
705
685
665
645
625
605
585
-60 -20 20 60 100
)
j
°C
22 Avalanche power losses
P
= f (f )
AR
parameter:
500
W
400
350
AR
P
300
250
200
150
100
50
180
T
j
0
10
E
=1mJ
AR
4
10
5
Hz
10
6
f
23 Typ. capacitances
C = f (
parameter:
V
)
DS
V
=0V, f=1 MHz
GS
5
10
pF
4
10
3
10
C
2
10
1
10
0
10
0 100 200 300 400
Crss
Coss
Ciss
V
V
DS
600
24 Typ. C
E
=f(V
oss
14
µJ
12
11
10
oss
9
E
8
7
6
5
4
3
2
1
0
0 100 200 300 400
stored energy
oss
)
DS
V
V
600
DS
Page 10
2003-08-15
Definition of diodes switching characteristics
SPP20N65C3, SPA20N65C3
SPI20N65C3
Page 11
2003-08-15
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP20N65C3, SPA20N65C3
SPI20N65C3
B
A
±0.13
1.27
4.44
±0.6
±0.2
2.8
0.05
15.38
±0.5
C
2.54
2x
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
±0.9
3x
0.75
1.17
5.23
±0.1
±0.22
13.5
M
A0.25
B
C
0.5
2.51
±0.48
9.98
±0.1
±0.2
Page 12
2003-08-15
P-TO-262-3-1 (I2-PAK)
±0.2
10
0...0.3
1)
±0.3
8.5
1)
7.55
±0.3
1
11.6
C
±0.2
4.55
0...0.15
1.05
3 x 0.75
2 x
2.54
A
±0.5
13.5
±0.1
SPP20N65C3, SPA20N65C3
SPI20N65C3
B
4.4
1.27
0.05
2.4
2.4
M
C
A0.25
B
0.5
±0.2
9.25
±0.1
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 13
2003-08-15
SPP20N65C3, SPA20N65C3
SPI20N65C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 14
2003-08-15
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