jmax
)
jmax
AR
j
g
查询11N60S5供应商
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPP11N60S5 P-TO220-3-1 Q67040-S4198
SPB11N60S5 P-TO263-3-2 Q67040-S4199
SPI11N60S5 P-TO262 Q67040-S4338
P-TO262 P-TO220-3-1P-TO263-3-2
Marking
11N60S5
11N60S5
11N60S5
V
R
DS(on)
I
DS
D
600 V
0.38 Ω
11 A
2
-
-
-
3
2
1
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 5.5 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 11 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
Symbol Value Unit
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
D puls
AS
AR
GS
GS
tot
,
T
A
11
7
22
340 mJ
0.6
11 A
±20
V
±30
125 W
st
-55... +150
°C
Page 1
2004-03-30Rev. 2.1
Maximum Ratings
)
SPP11N60S5, SPB11N60S5
SPI11N60S5
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol Value Unit
dv/dt 20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature,
R
thJC
R
thJA
R
thJA
T
- - 260 °C
sold
- - 1 K/W
- - 62
-
-
-
35
62
-
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
min. typ. max.
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=11A - 700 -
I
=500µΑ, VGS=V
D
VDS=600V, VGS=0V,
T
=25°C,
j
T
=150°C
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=7A,
T
=25°C
j
T
=150°C
j
f=1MHz, open Drain - 29 -
3.5 4.5 5.5
DS
-
-
-
-
-
-
0.34
0.92
25
250
0.38
-
µA
Ω
Page 2
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
3)
energy related
Effective output capacitance,
4)
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
fs
C
C
d(on)
r
d(off)
f
Q
gs
iss
oss
rss
o(er)
o(tr)
V
≥2*I
DS
D*RDS(on)max
I
=7A
D
VGS=0V, VDS=25V,
f=1MHz
,
- 6 - S
- 1460 - pF
- 610 -
- 21 -
VGS=0V,
V
=0V to 480V
DS
- 45 - pF
- 85 -
VDD=350V, VGS=0/10V,
I
=11A, RG=6.8Ω
D
- 130 - ns
- 35 -
- 150 225
- 20 30
VDD=350V, ID=11A - 10.5 - nC
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
C
is a fixed capacitance that gives the same stored energy as C
o(er)
4
C
is a fixed capacitance that gives the same charging time as C
o(tr)
gd
g
(plateau)
VDD=350V, ID=11A,
V
=0 to 10V
GS
VDD=350V, ID=11A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
- 24 -
- 41.5 54
=EAR*f.
AV
2004-03-30Rev. 2.1
DSS
DSS
.
.
SPP11N60S5, SPB11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPI11N60S5
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 K/W
0.03
0.056
0.197
0.216
0.083
min. typ. max.
TC=25°C - - 11 A
- - 22
VGS=0V, IF=IS - 1 1.2 V
VR=350V, IF=IS ,
/dt=100A/µs
di
F
- 650 1105 ns
- 7.9 - µC
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.0001878
0.0007106
0.000988
0.002791
0.007285
0.063
Ws/K
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
Page 4
th,n
th,n
T
case
amb
External Heatsink
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
1 Power dissipation
P
= f (TC)
tot
SPP11N60S5
140
W
120
110
100
tot
90
P
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120
°C
2 Safe operating area
ID = f ( VDS )
parameter : D = 0 ,
2
10
A
1
10
D
I
0
10
-1
10
-2
10
160
T
C
10
0
T
=25°C
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
1
10
10
2
V
V
DS
10
3
3 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: t
35
A
25
D
I
20
15
10
5
-1
10
s
t
p
0
0 5 10 15
= 10 µs, V
p
20V
12V
10V
GS
V
DS
9V
8V
7V
6V
25
V
Page 5
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: t
18
A
14
12
D
I
10
8
6
4
2
0
0 5 10 15
= 10 µs, V
p
GS
20V
12V
10V
V
V
9V
8V
7V
6V
DS
25
6 Typ. drain-source on resistance
R
DS(on)
parameter:
R
=f(ID)
T
=150°C, V
j
2
mΩ
DS(on)
1
0.5
0
0 2 4 6 8 10 12 14
GS
20V
12V
10V
9V
8V
7V
6V
A
I
D
18
7 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 7 A, VGS = 10 V
D
SPP11N60S5
2.1
Ω
1.8
1.6
1.4
DS(on)
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98%
typ
°C
8 Typ. transfer characteristics
= f ( VGS ); V
I
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
32
A
24
D
20
I
16
12
8
4
180
T
j
0
0 4 8 12
25 °C
150 °C
V
V
20
GS
Page 6
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
j
SPI11N60S5
9 Typ. gate charge
= f (Q
V
GS
parameter: I
SPP11N60S5
16
V
0.2 V
0.8 V
12
GS
10
V
8
6
4
2
0
0 10 20 30 40 50
)
Gate
= 11 A pulsed
D
DS max
DS max
nC
Q
Gate
65
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
2
SPP11N60S5
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
11 Avalanche SOA
IAR = f (tAR)
par.:
T
≤ 150 °C
j
11
A
9
8
7
AR
I
6
5
4
3
2
1
0
10
-3
10
(START)
T
j
-2
-1
10
=125°C
10 0 10 1 10
T
2
(START)
j
=25°C
µs
t
AR
10
12 Avalanche energy
EAS = f (Tj)
par.: I
4
= 5.5 A, VDD = 50 V
D
350
mJ
250
AS
E
200
150
100
50
0
20 40 60 80 100 120
°C
160
T
j
Page 7
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
13 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPP11N60S5
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
14 Avalanche power losses
PAR = f (f )
parameter:
300
W
200
AR
P
150
100
50
180
T
j
0
10
E
=0.6mJ
AR
4
10
5
Hz
10
6
f
15 Typ. capacitances
C = f (VDS)
parameter:
10
pF
10
C
10
10
10
V
=0V, f=1 MHz
GS
4
3
2
1
C
rss
0
0 100 200 300 400
16 Typ. C
E
=f(VDS)
oss
7.5
µJ
C
iss
6
5.5
5
oss
E
4.5
C
oss
V
600
DS
V
4
3.5
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400
stored energy
oss
V
V
600
DS
Page 8
2004-03-30Rev. 2.1
Definition of diodes switching characteristics
SPP11N60S5, SPB11N60S5
SPI11N60S5
Page 9
2004-03-30Rev. 2.1
P-TO-220-3-1
SPP11N60S5, SPB11N60S5
SPI11N60S5
±0.4
±0.6
10
3.7
±0.2
A
±0.2
2.8
1.27
0.05
±0.13
15.38
±0.5
B
C
2.54
2x
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
±0.9
3x
0.75
1.17
5.23
±0.1
±0.22
13.5
M
BA0.25
C
4.44
0.5
2.51
±0.48
9.98
±0.1
±0.2
P-TO-263-3-2 (D2-PAK)
Page 10
2004-03-30Rev. 2.1
P-TO-262-3-1 (I2-PAK)
±0.2
10
0...0.3
1)
±0.3
8.5
1)
7.55
±0.3
1
11.6
C
±0.2
4.55
0...0.15
1.05
3 x 0.75
2.54
2 x
A
±0.5
13.5
±0.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
B
4.4
1.27
0.05
2.4
2.4
M
BA0.25
C
0.5
±0.2
9.25
±0.1
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
Page 11
2004-03-30Rev. 2.1
SPP11N60S5, SPB11N60S5
SPI11N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 12
2004-03-30Rev. 2.1
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