查询SN7002W供应商
Final data
SN7002W
SIPMOS Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Gate
pin1
Type Package Ordering Code Tape and Reel Information
SN7002W
SOT-323 Q67042-S4186
E6327: 3000 pcs/reel
SN7002W SOT-323 Q67042-S4193 E6433: 10000 pcs/reel
Product Summary
V
DS
R
DS(on)
I
D
SOT-323
Drain
pin 3
Source
pin 2
60 V
5 Ω
0.23 A
Marking
sSN
sSN
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
IS=0.23A, VDS=48V, di/dt=200A/µs, T
jmax
=150°C
Gate source voltage V
I
D
I
D puls
dv/dt
GS
0.23
0.18
0.92
6 kV/µs
±20
A
V
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation
TA=25°C
Operating and storage temperature T
P
tot
, T
j
stg
0.5 W
-55... +150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Page 1
2003-04-03
Final data
SN7002W
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - ambient
R
thJS
- - 250 K/W
at minimal footprint
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = V
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
DS
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
60 - - V
0.8 1.4 1.8
-
-
-
-
0.1
5
- - 10 nA
µA
Drain-source on-state resistance
VGS=4.5V, ID=0.2A
Drain-source on-state resistance
VGS=10V, ID=0.23A
Page 2
R
DS(on)
R
DS(on)
- 4.1 7.5
- 2.3 5
2003-04-03
Ω
Final data
f
SN7002W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on)
r
d(off)
gs
gd
g
(plateau)
VDS≥2*ID*R
ID=0.18A
VGS=0, VDS=25V,
f=1MHz
DS(on)max
,
0.1 0.21 - S
- 34 45 pF
- 7.2 9.6
- 3 4.5
VDD=30V, VGS=10V,
ID=0.23A, RG=6Ω
- 2.4 3.6 ns
- 2.8 4.2
- 6 9
- 8.5 12.75
VDD=48V, ID=0.23A - 0.11 0.17 nC
- 0.42 0.63
VDD=48V, ID=0.23A,
VGS=0 to 10V
VDD=48V, ID = 0.23 A - 3.4 - V
- 1 1.5
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsedI
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TA=25°C - - 0.23 A
- - 0.92
VGS=0, IF=0.23A - 0.85 1.2 V
VR=30V, I
diF/dt=100A/µs
Page 3
F=lS
,
- 10.8 16.2 ns
- 3.2 4.8 nC
2003-04-03
Final data
SN7002W
1 Power dissipation
P
= f (TA)
tot
SN7002W
0.55
W
0.45
0.4
tot
0.35
P
0.3
0.25
0.2
0.15
0.1
0.05
0
0 20 40 60 80 100 120
°C
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
SN7002W
0.26
A
0.22
0.2
0.18
D
0.16
I
0.14
0.12
0.1
0.08
0.06
0.04
0.02
160
T
A
0
0 20 40 60 80 100 120
°C
160
T
A
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
1
SN7002W
10
A
0
10
DS(on)
D
I
-1
10
-2
10
-3
10
10
R
0
I
D
/
DS
V
=
1
10
V
t
= 25.0µs
p
DC
V
100 µs
1 ms
10 ms
DS
10
4 Transient thermal impedance
Z
= f (tp)
thJA
parameter : D = tp/T
3
SN7002W
10
K/W
2
10
thJA
1
Z
10
0
10
-1
10
single pulse
-2
2
10
10
-7
-6
10
-5
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-4
-3
10
10
-2
t
0
10
s
p
Page 4
2003-04-03
Final data
SN7002W
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, V
0.6
A
0.4
D
I
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
GS
10
7V
6V
5V
4.5V
4V
3.7V
3.5V
3.0V
V
V
DS
6 Typ. drain-source on resistance
R
DS(on)
parameter: Tj = 25 °C, V
5
= f (ID)
7.5
Ω
6
5.25
DS(on)
R
4.5
3.75
3
2.25
1.5
0.75
0
0 0.1 0.2 0.3 0.4 0.5
GS
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
A
0.7
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: Tj = 25 °C
0.5
A
D
I
0.3
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.3
S
0.2
gfs
0.15
0.1
0.05
V
4.5
V
GS
0
0 0.1 0.2 0.3 0.4
A
0.6
I
D
Page 5
2003-04-03
Final data
j
SN7002W
(.) Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 0.23 A, VGS = 10 V
SN7002W
15
Ω
12
11
10
DS(on)
R
9
8
7
6
5
4
3
2
1
0
-60 -20 20 60 100
98%
typ
°C
10 Typ. gate threshold voltage
V
parameter: VGS = V
180
T
j
= f (Tj)
GS(th)
; I
DS
2.2
V
1.8
1.6
1.4
GS(th)
V
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
=26µA
D
98%
typ.
2%
°C
160
T
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
2
10
pF
C
1
10
0
10
0 5 10 15 20
Ciss
Coss
Crss
V
V
DS
30
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
0
SN7002W
10
A
-1
10
F
I
-2
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-3
10
0 0.4 0.8 1.2 1.6 2 2.4
V
V
SD
3
Page 6
2003-04-03
Final data
SN7002W
13 Typ. gate charge
V
= f (QG); parameter: VDS ,
GS
ID = 0.16 A pulsed, Tj = 25 °C
SN7002W
16
V
12
GS
10
V
0.2 V
DS max
8
0.5 V
DS max
0.8 V
DS max
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
nC
Q
14 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
1.7
G
= f (Tj)
SN7002W
72
V
68
66
64
62
60
58
56
54
-60 -20 20 60 100
°C
180
T
j
Page 7
2003-04-03
Final data
SN7002W
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2003-04-03
Loading...