intersil SN7002N DATA SHEET

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Final data

SN7002N

SIPMOS Small-Signal-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Gate pin1

Type Package Ordering Code Tape and Reel Information

SN7002N

SOT-23 Q67042-S4185

E6327: 3000 pcs/reel

SN7002N SOT-23 Q67042-S4192 E6433: 10000 pcs/reel

Product Summary

V

DS

R

DS(on)

I

D

SOT-23

Drain pin 3

Source pin 2

60 V

5 Ω

0.2 A

Marking

sSN sSN

Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit

Continuous drain current

TA=25°C TA=70°C

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=0.2A, VDS=48V, di/dt=200A/µs, T

jmax

=150°C

Gate source voltage V

I

D

I

D puls

dv/dt

GS

0.2

0.16

0.8

6 kV/µs

±20

A

V

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation

TA=25°C

Operating and storage temperature T

P

tot

, T

j

stg

0.36 W

-55... +150

°C

IEC climatic category; DIN IEC 68-1 55/150/56

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2003-03-26

Final data

SN7002N

Thermal Characteristics Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

R

thJA

- - 350 K/W

at minimal footprint

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = V

ID=26µA

Zero gate voltage drain current

VDS=60V, VGS=0, Tj=25°C VDS=60V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=20V, VDS=0

DS

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

60 - - V

0.8 1.4 1.8

-

0.1 5

- - 10 nA

µA

Drain-source on-state resistance

VGS=4.5V, ID=0.17A

Drain-source on-state resistance

VGS=10V, ID=0.5A

Page 2

R

DS(on)

R

DS(on)

- 3.9 7.5

- 2.5 5

2003-03-26

Ω

Final data

f

Inv. diode direct current, pulsed

SM

rr

SN7002N

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C Output capacitance C

Reverse transfer capacitance C Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge Q Gate to drain charge Q Gate charge total Q

Gate plateau voltage V

fs

iss oss

rss d(on) r d(off)

gs gd g

(plateau)

VDS≥2*ID*R ID=0.16A

VGS=0, VDS=25V, f=1MHz

DS(on)max

,

0.09 0.17 - S

- 34 45 pF

- 7.2 9.6

- 2.8 4.2

VDD=30V, VGS=10V, ID=0.5A, RG=6Ω

- 2.4 3.6 ns

- 3.2 4.8

- 5.3 8

- 3.6 5.4

VDD=48V, ID=0.5A - 0.14 0.21 nC

- 0.42 0.63

VDD=48V, ID=0.5A, VGS=0 to 10V

VDD=48V, ID = 0.5 A - 4.5 - V

- 1 1.5

Reverse Diode

Inverse diode continuous

I

forward current

I

Inverse diode forward voltage V Reverse recovery time t Reverse recovery charge Q

S

SD

TA=25°C - - 0.2 A

- - 0.8

VGS=0, IF = I VR=30V, I

diF/dt=100A/µs

Page 3

F=lS

S

,

- 0.83 1.2 V

- 14.2 21.3 ns

- 5.9 8.8 nC

2003-03-26

Final data

SN7002N

1 Power dissipation

P

= f (TA)

tot

SN7002N

0.38

W

0.32

0.28

tot

0.24

P

0.2

0.16

0.12

0.08

0.04

0

0 20 40 60 80 100 120

°C

2 Drain current

ID = f (TA) parameter: VGS≥ 10 V

SN7002N

0.22

A

0.18

0.16

0.14

D

I

0.12

0.1

0.08

0.06

0.04

0.02

160

T

A

0

0 20 40 60 80 100 120

°C

160

T

A

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

1

SN7002N

10

A

0

10

I

D

/

DS

DS(on)

0

V

=

1

10

D

I

R

-1

10

-2

10

-3

10

V

t

= 200.0µs

p

DC

V

1 ms

10 ms

DS

10

4 Transient thermal impedance

Z

= f (tp)

thJA

parameter : D = tp/T

SN7002N

3

10

K/W

2

10

1

10

thJA

Z

0

10

-1

10

-2

10

2

10

-3

10

-7

10

single pulse

-6

10

-5

10

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

-3

10

-2

t

0

10

s

p

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2003-03-26

Final data

SN7002N

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, V

1

10V 7V 6V 5V

4.5V

4.0V

3.7V

3.5V

3.0V

0

0 0.5 1 1.5 2 2.5 3 3.5 4

D

I

A

0.75

0.625

0.5

0.375

0.25

0.125

GS

6 Typ. drain-source on resistance

R

DS(on)

parameter: Tj = 25 °C, V

V

5

V

DS

= f (ID)

GS

7.5

Ω

6

5.25

DS(on)

R

4.5

3.75

3

2.25

1.5

0.75

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

3.1V

3.5V

3.7V

4.1V

4.5V 5V 6V 7V 10V

I

A

1

D

7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x R

DS(on)max

parameter: Tj = 25 °C

1

A

0.8

0.7

D

I

0.6

0.5

0.4

0.3

0.2

0.1

0

0 0.8 1.6 2.4 3.2 4 4.8

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0.4

S

0.3

0.25

gfs

0.2

0.15

0.1

0.05

V

6

V

GS

0

0 0.2 0.4 0.6 0.8

A

1.1

I

D

Page 5

2003-03-26

Final data

j

SN7002N

9 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 0.5 A, VGS = 10 V

SN7002N

15

Ω

12 11 10

DS(on)

R

9 8 7 6 5 4 3 2 1 0

-60 -20 20 60 100

98%

typ

°C

10 Typ. gate threshold voltage

V

parameter: VGS = V

180

T

j

= f (Tj)

GS(th)

; I

DS

2.2

V

1.8

1.6

1.4

GS(th)

V

1.2

1

0.8

0.6

0.4

0.2

0

-60 -20 20 60 100

=26µA

D

98%

typ.

2%

°C

160

T

j

11 Typ. capacitances

C = f (VDS) parameter: VGS=0, f=1 MHz, Tj = 25 °C

2

10

pF

C

1

10

0

10

0 5 10 15 20

Ciss

Coss

Crss

V

DS

30

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

0

SN7002N

10

A

-1

10

F

I

-2

10

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)

-3

10

0 0.4 0.8 1.2 1.6 2 2.4

V

SD

3

Page 6

2003-03-26

Final data

SN7002N

13 Typ. gate charge

V

= f (QG); parameter: VDS ,

GS

ID = 0.2 A pulsed, Tj = 25 °C

SN7002N

16

V

12

GS

10

0.2 V

V

DS max

0.5 V

DS max

8

0.8 V

DS max

6

4

2

0

0 0.4 0.8 1.2 1.6 2

nC

Q

14 Drain-source breakdown voltage

V

(BR)DSS

V

2.8

G

= f (Tj)

SN7002N

72

V

68

66

64

62

60

58

56

54

-60 -20 20 60 100

°C

180

T

j

Page 7

2003-03-26

Final data

SN7002N

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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2003-03-26

intersil SN7002N DATA SHEET

Specifications and Main Features

Frequently Asked Questions

User Manual