Intersil RURP640CC, RURP650CC, RURP660CC Datasheet

RURP640CC, RURP650CC,

RURP660CC

April 1995

Features

• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . .<55ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175

• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .600V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Description

The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (t
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construc­tion.

These devices are intended for use as freewheeling/clamp­ing diodes and rectifiers in a variety of switching power sup­plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reduc­ing power loss in the switching transistors.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RURP640CC TO-220AB RURP640C
RURP650CC TO-220AB RURP650C
RURP660CC TO-220AB RURP660C

RR

6A, 400V - 600V Ultrafast Dual Diodes

Package

JEDEC TO-220AB

o

C

ANODE 2

CATHODE

ANODE 1

CATHODE
(FLANGE)

Symbol

<

K

A

1

A

2

NOTE: When ordering, use the entire part number.

Formerly developmental type TA49038.

Absolute Maximum Ratings (per leg) T

Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I

(TC = +155oC)

Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Halfwave, 1 phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

= +25oC, Unless Otherwise Specified

C

RURP640CC RURP650CC RURP660CC UNITS

RRM

RWM

R

F(AV)

FSM

FSM

D

AVL

, TJ-65 to +175 -65 to +175 -65 to +175

STG

400 500 600 V
400 500 600 V
400 500 600 V

12 12 12 A

60 60 60 A

50 50 50 W
10 10 10 mJ

6-55

666A

o

C

File Number 4007

Specifications RURP640CC, RURP650CC, RURP660CC

Electrical Specifications (per leg) T

= +25oC, Unless Otherwise Specified

C

LIMITS

RURP640CC RURP650CC RURP660CC

SYMBOL TEST CONDITION

V

F

I

R

IF = 6A, TC = +25oC - - 1.5 - - 1.5 - - 1.5 V
I

= 6A, TC = +150oC - - 1.2 - - 1.2 - - 1.2 V

F

VR = 400V, TC = +25oC --100------µA
V

= 500V, TC = +25oC -----100---µA

R

MIN TYP MAX MIN TYP MAX MIN TYP MAX

VR = 600V, TC = +25oC --------100µA

I

R

t

RR

VR = 400V, TC = +150oC--500------µA
V

= 500V, TC = +150oC-----500---µA

R

= 600V, TC = +150oC--------500µA

V

R

IF = 1A, dIF/dt = 200A/µs- -55- -55- -55ns
IF = 6A, dIF/dt = 200A/µs- -60- -60- -60ns

t

A

t

B

Q

RR

C

J

R

θJC

IF = 6A, dIF/dt = 200A/µs - 28 - - 28 - - 28 - ns
IF = 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns
IF = 6A, dIF/dt = 200A/µs - 150 - - 150 - - 150 - nC
VR = 10V, IF = 0A - 25 - - 25 - - 25 - pF

--3--3--3oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

I

= Instantaneous reverse current.

R

= Reverse recovery time (See Figure 2), summation of tA + tB.

t

RR

= Time to reach peak reverse current (See Figure 2).

t

A

t

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

B

= Reverse recovery charge.

Q

RR

= Junction Capacitance.

C

J

R

= Thermal resistance junction to case.

θJC

= Controlled avalanche energy. (See Figures 10 and 11).

E

AVL

pw = pulse width.

D = duty cycle.

UNITS

V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt

= SELF INDUCTANCE OF

L

1

R4+ L

LOOP

+V

1

0

t

2

t

1

0

-V

2

F

t

3

R

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

+V

3

≥ 5t

R

1

Q

1

R

2

Q

3

3

C1

Q

2

-V

4

t

1

A(MAX)

t2 > t

RR

t3 > 0

L

t

1

A(MIN)

≤

R

10

4

L

LOOP

Q

4

DUT

R

4

0

dI

F

I

F

dt

V

RM

t

RR

t

A

t

B

0.25 I

RM

I

RM

V

R

6-56