Intersil RLP1N08LE Datasheet
RLP1N08LE
Data Sheet April 1999
1A, 80V, 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. “Logic level”
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Ordering Information
PART NUMBER PACKAGE BRAND
RLP1N08LE TO-220AB L1N08LE
NOTE: When ordering, use the entire part number.
File Number
Features
• 1A, 80V
•r
•I
• Built-in Current Limiting
• ESD Protected
• Controlled Switching Limits EMI and RFI
• Specified for 150
• Temperature Compensated Spice Model Provided
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.750Ω
DS(ON)
at 150oC = 1.5A Maximum
LIMIT
o
C Operation
Components to PC Boards”
Symbol
D
2252.3
Packaging
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RLP1N08LE
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RLP1N08LE UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
80 V
80 V
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD 2 kV
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed). . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
GS
D
Self Limited
5.5 V
30 W
Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V, Figure 7 80 - - V
= VDS, ID = 250µA, Figure 8 1 - 2 V
VDS = 65V, VGS = 0V TC = 25oC--1µA
TC = 150oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Limiting Current I
DS(ON)ID
DS(Lim)VDS
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
(OFF)
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
(ON)
θJC
θJA
VGS = 5V, TC = 150oC--50µA
= 1A, VGS = 5V
Figure 6
= 15V, VGS = 5V
Figure 3
VDD = 30V, ID = 1A, VGS = 5V, RGS = 25Ω
RL = 30Ω
r
TC = 25oC - - 0.750 Ω
TC = 150oC - - 1.5 Ω
TC = 25oC 1.8 - 3 A
TC = 150oC 1.1 - 1.5 A
- - 6.5 µs
- - 1.5 µs
1-5µs
- - 7.5 µs
f
1-5µs
- - 12.5 µs
- - 4.17oC/W
TO-220AB - - 62
o
C/W
Electrostatic Voltage ESD Human Model (100pF, 1.5kΩ) 2000 - - V
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-436
ISD = 1A - - 1.5 V
ISD = 1A - - 1 ms
rr
RLP1N08LE
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
125
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
2.0
1.5
1.0
0.5
0
NORMALIZED DRAIN TO SOURCE CURRENT
-50 0 50 100 150
T
, CASE TEMPERATURE (oC)
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
= 10V, VGS = 5V
V
DS
10
TJ = MAX RATED
ID MAX AT 25oC
ID MIN AT 150oC
1.0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
, DRAIN CURRENT (A)
D
I
0.1
1 10 100
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
V
DSS
MAX = 80V
100µs
1ms
10ms
DC
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
3.0
TC = 25oC
2.5
2.0
1.5
1.0
0.5
, DRAIN TO SOURCE CURRENT (A)
DS
I
0
012345
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
8V
6V
5V
VGS = 10V
4V
3V
2V
FIGURE 3. NORMALIZED CURRENT LIMIT vs CASE
FIGURE 4. SATURATION CHARACTERISTICS
TEMPERATURE
4.2
PULSE TEST
PULSE DURATION = 80µs
3.5
DUTY CYCLE = 0.5% MAX
V
= 15V
DS
2.8
2.1
1.4
, DRAIN TO SOURCE CURRENT (A)
0.7
DS(ON)
I
0
0 2.5 5.0 7.5
, GATE TO SOURCE VOLTAGE (V)
V
GS
-55oC
25oC
150oC
2.5
VGS = 5V, ID = 1A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
2.0
1.5
1.0
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50 0 50 100 150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. NORMALIZED DRAIN TO SOURCEON
RESISTANCE vs JUNCTION TEMPERATURE
6-437
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