Intersil RLP1N06CLE Datasheet

RLP1N06CLE

Data Sheet July 1999

1A, 55V, 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET

The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.

Formerly developmental type TA09880.

Ordering Information

PART NUMBER PACKAGE BRAND

RLP1N06CLE TO-220AB L1N06CLE

NOTE: When ordering, use the entire part number.

File Number

Features

• 1A, 55V

•r

•I

• Built-in Voltage Clamp

• Built-in Current Limiting

• ESD Protected, 2kV Minimum

• Controlled Switching Limits EMI and RFI

• 175

• Logic Level Gate

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.750Ω

DS(ON)

at 150oC = 1.1A to 1.5A Maximum

LIMIT

o

C Rated Junction Temperature

Components to PC Boards”

Symbol

D

2839.4

Packaging

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-428

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RLP1N06CLE

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RLP1N06CLE UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

55 V

55 V

Electrostatic Voltage at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 2 kV

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed). . . . . . . . . . . . . . . . . . . .V

GS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

D

Self Limited

5.5 V
36 W

Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 20mA, VGS = 0V (Figure 7) 55 - 70 V

= VDS, ID = 250µA (Figure 8) 1 - 2.5 V

VDS = 45V, VGS = 0V TC = 25oC--5µA

TC = 150oC--20µA

Gate to Source Leakage Current I

GSS

VGS = 5V TC = 25oC--5µA

TC = 150oC--20µA

Drain to Source On Resistance (Note 2) r

Limiting Current I

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DS(ON)ID

DS(LIM)VDS

(ON)

d(ON)

r

d(OFF)

f

(OFF)

θJC
θJA

Electrostatic Voltage ESD Human Model (100pF, 1.5kΩ)

= 1A, VGS = 5V

(Figure 6)

= 15V, VGS = 5V

(Figure 2)
VDD = 30V, ID = 1A, VGS = 5V, RGS = 25Ω

RL = 30Ω

TC = 25oC - - 0.750 Ω
TC = 150oC - - 1.500 Ω
TC = 25oC 1.8 - 3 A
TC = 150oC 0.9 - 1.5 A

- - 6.5 µs

- - 1.5 µs

1-5µs

- - 7.5 µs

1-5µs

- - 12.5 µs

- - 4.17oC/W

TO-220AA - - 62

2000 - - V

o

C/W

MIL-STD-883B (Category B2)

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t

NOTES:

2. Pulsed: pulse duration = 80µs maximum, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

6-429

ISD = 1A - - 1.5 V
ISD = 1A - - 1 ms

rr

RLP1N06CLE

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1

OPERATION IN THIS AREA
LIMITED BY I

, DRAIN TO SOURCE CURRENT (A)

DS

I

0.1
1 10 100

V

DS

DS(ON)

DS(LIM)

V

, DRAIN TO SOURCE VOLTAGE (V)

DSS

MAX = 55V

TJ = MAX RATED
T

= 25oC

C

150

100µs

1ms

10ms
DC

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 10V, VGS = 5V

V

DS

1.5

1.0

0.5

NORMALIZED DRAIN CURRENT

0

-50 -25 0 25 50 75 100 125 150 175
T

, CASE TEMPERATURE (oC)

C

FIGURE 2. NORMALIZED CURRENT LIMIT vs CASE

TEMPERATURE

2.5

2.0

1.5

1.0

0.5

, DRAIN TO SOURCE CURRENT (A)

DS

I

0

012345

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

VGS = 6V

= 5V

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 7V

VGS = 4V

VGS = 3V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

3.0
VDS >> IDS x r

PULSE DURATION = 80µs

2.5

DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

, DRAIN TO SOURCE CURRENT (A)

0.5

DS(ON)

I

0

0123456

DS(ON)

, GATE TO SOURCE VOLTAGE (V)

V

GS

-25oC

25oC

150oC

3.0
VGS = 5V, ID = 0.5A

PULSE DURATION = 80µs

2.5

DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 -25 0 25 50 75 100 125 150 175
, JUNCTION TEMPERATURE (oC)

T

J

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

6-430