Intersil RHRU75100, RHRU7570, RHRU7580, RHRU7590 Datasheet
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Data Sheet April 1995 File Number 3925.1
75A, 700V - 1000V Hyperfast Diodes
RHRU7570, RHRU7580, RHRU7590 and RHRU75100
(TA49068) are hyperfast diodes with soft recovery characteristics (t
< 85ns). They have half the recovery time of
RR
ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU7570 TO-218 RHRU7570
RHRU7580 TO-218 RHRU7580
RHRU7590 TO-218 RHRU7590
RHRU75100 TO-218 RHRU75100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
C
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = +52oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . E
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
STG
Symbol
K
A
RHRU7570 RHRU7580 RHRU7590 RHRU75100 UNITS
700 800 900 1000 V
700 800 900 1000 V
700 800 900 1000 V
R
75 75 75 75 A
150 150 150 150 A
750 750 750 750 A
190 190 190 190 W
D
AVL
, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175oC
50 50 50 50 mj
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU7570 RHRU7580 RHRU7590 RHRU75100
SYMBOL TEST CONDITION
V
IF = 75A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V
F
IF = 75A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V
I
VR = 700V, TC = +25oC--500---------µA
R
VR = 800V, TC = +25oC-----500------µA
VR = 900V, TC = +25oC--------500---µA
VR = 1000V, TC = +25oC-----------500µA
I
VR = 700V, TC = +150oC--2.0---------mA
R
VR = 800V, TC = +150oC-----2.0------mA
= 900V, TC = +150oC--------2.0---mA
V
R
V
= 1000V, TC= +150oC-----------2.0mA
R
t
IF = 1A, dIF/dt = 100A/µs- -85- -85- -85- -85ns
RR
IF = 75A, dIF/dt = 100A/µs - - 100 - - 100 - - 100 - - 100 ns
t
IF = 75A, dIF/dt = 100A/µs - 55 - - 55 - - 55 - - 55 - ns
A
t
IF = 75A, dIF/dt = 100A/µs - 40 - - 40 - - 40 - - 40 - ns
B
Q
RRIF
C
J
R
θJC
= 75A, dIF/dt = 100A/µs - 240 - - 240 - - 240 - - 240 - nC
VR = 10V, IF = 0A - 220 - - 220 - - 220 - - 220 - pF
- - 0.8 - - 0.8 - - 0.8 - - 0.8
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
I
= Instantaneous reverse current.
R
= Reverse recovery time (Figure 2), summation of tA + tB.
t
RR
= Time to reach peak reverse current (See Figure 2).
t
A
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
B
= Reverse recovery charge.
Q
RR
= Junction capacitance.
C
J
R
= Thermal resistance junction to case.
θJC
= Controlled avalanche energy. (See Figures 10 and 11).
E
AVL
pw = pulse width.
D = duty cycle.
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
t
3
R
3
FIGURE 1. tRR TEST CIRCUIT
+V
3
t
LOOP
R
1
t2 > t
t3 > 0
L
R
4
1
4
≥ 5t
DUT
A(MAX)
RR
t
≤
A(MIN)
10
dI
F
I
F
dt
0
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
R
1
Q
1
R
2
Q
3
C1
Q
2
L
Q
4
-V
4
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
2
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