RHRU7540, RHRU7550, RHRU7560
Data Sheet April 1995 File Number 3945.1
75A, 400V - 600V Hyperfast Diodes
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are
hyperfast diodes with soft recovery characteristics
(t
< 55ns). They have half the recovery time of ultrafast
RR
diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU7540 TO-218 RHRU7540
RHRU7550 TO-218 RHRU7550
RHRU7560 TO-218 RHRU7560
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
C
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = +80oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
STG
Symbol
K
A
RHRU7540 RHRU7550 RHRU7560 UNITS
400 500 600 V
400 500 600 V
R
D
AVL
, TJ-65 to +175 -65 to +175 -65 to +175
400 500 600 V
75 75 75 A
150 150 150 A
750 750 750 A
190 190 190 W
50 50 50 mj
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRU7540, RHRU7550, RHRU7560
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU7540 RHRU7550 RHRU7560
SYMBOL TEST CONDITION
V
F
IF = 75A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V
IF = 75A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V
I
R
VR = 400V, TC = +25oC --500------µA
VR = 500V, TC = +25oC -----500---µA
VR = 600V, TC = +25oC --------500µA
I
R
VR = 400V, TC = +150oC --2.0------mA
VR = 500V, TC = +150oC -----2.0---mA
VR = 600V, TC = +150oC --------2.0mA
t
RR
IF = 1A, dIF/dt = 100A/µs - -55- -55- -55ns
IF = 75A, dIF/dt = 100A/µs - -60- -60- -60ns
t
A
t
B
Q
RR
C
J
R
θJC
IF = 75A, dIF/dt = 100A/µs - 35 - - 35 - - 35 - ns
IF = 75A, dIF/dt = 100A/µs - 18 - - 18 - - 18 - ns
IF = 75A, dIF/dt = 100A/µs - 90 - - 90 - - 90 - nC
VR = 10V, IF = 0A - 200 - - 200 - - 200 - pF
- - 0.8 - - 0.8 - - 0.8
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
= Instantaneous reverse current.
I
R
t
= Reverse recovery time (See Figure 2), summation of tA + tB.
RR
= Time to reach peak reverse current (See Figure 2).
t
A
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
t
B
Q
= Reverse recovery charge.
RR
= Junction Capacitance.
C
J
= Thermal resistance junction to case.
R
θJC
E
= Controlled avalanche energy. (See Figures 10 and 11).
AVL
pw = pulse width.
D = duty cycle.
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
Q
1
t
3
R
3
FIGURE 1. t
R
1
R
2
C1
Q
3
TEST CIRCUIT
RR
2
+V
3
t1 5t
R
t2 > t
t3 > 0
L
1
R
4
4
A(MAX)
RR
t
£
DUT
A(MIN)
10
dI
F
I
F
dt
0
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
Q
2
L
LOOP
Q
4
-V
4
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS