Intersil RHRU75120 Datasheet

RHRU75120

Data Sheet April 1995 File Number 3408.2

75A, 1200V Hyperfast Diode

The RHRU75120 (TA49042) is a hyperfast diode with soft
recovery characteristics (t

< 85ns). It has half the recov-

RR

ery time of ultrafast diodes and is silicon nitride passivated
ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its
low stored charge and hyperfast soft recovery minimize ring­ing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.

Ordering Information

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

RHRU75120 TO-218 RHRU75120

NOTE: When ordering, use the entire part number.

Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . +175

o

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Package

JEDEC STYLE TO-218

ANODE

CATHODE
(FLANGE)

C

Symbol

Absolute Maximum Ratings T

Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

(TC = +46oC)

Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

(Halfwave, 1Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

(L = 40mH)

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

= +25oC

C

STG

RRM

RWM

F(AV)

FSM

FSM

AVL

, T

K

A

RHRU75120 UNITS

1200 V
1200 V

R

D

J

1200 V

75 A

150 A

500 A

190 W

50 mj

-65 to +175

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

X

)

RHRU75120

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

LIMITS

SYMBOL TEST CONDITION

V

F

V

F

I

R

I

R

t

RR

t

RR

t

A

t

B

R

θJC

IF = 75A - - 3.2 V
IF = 75A TC = +150oC - - 2.6 V
VR = 1200V - - 500 µA
VR = 1200V TC = +150oC--2mA
IF = 1A, dIF/dt = 100A/µs--85ns
IF = 75A, dIF/dt = 100A/µs - - 100 ns
IF = 75A, dIF/dt = 100A/µs - 60 - ns
IF = 75A, dIF/dt = 100A/µs - 25 - ns

- - 0.8

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

= Instantaneous reverse current.

I

R

t

= Reverse recovery time (See Figure 2), summation of tA + tB.

RR

= Time to reach peak reverse current at (See Figure 2).

t

A

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

t

B

R

= Thermal resistance junction to case.

θJC

= Controlled avalanche energy (See Figures 7 and 8).

E

AVL

pw = pulse width.

D = duty cycle.

UNITSMIN TYP MAX

o

C/W

V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt

= SELF INDUCTANCE OF R

L

1

+ L

LOOP

+V

1

0

t

2

t

1

0

-V

2

F

4

t

3

R

3

FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

R

1

Q

1

R

2

C1

Q

3

+V

3

t1≥ 5t
t2 > t
t3 > 0

R

R

A(MA

RR

L

t

1

A(MIN

≤

10

4

DUT

4

0

dI

F

I

F

dt

V

RM

t

RR

t

A

t

B

0.25 I

RM

I

RM

V

R

Q

2

L

LOOP

Q

4

-V

4

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserv esthe right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Inf ormation furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

2