Intersil RHRU5070, RHRU5080, RHRU5090RHRU50100 Datasheet

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RHRU5070, RHRU5080, RHRU5090, RHRU50100

50A, 700V - 1000V Hyperfast Diodes

RHRU5070, RHRU5080, RHRU5090 and RHRU50100
(TA49066) are hyperfast diodes with soft recovery character­istics (t

RR

< 75ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion­implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamp­ing diodes and rectifiers in a variety of switching power sup­plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc­ing power loss in the switching transistors.

Ordering Information

Features

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . +175

o

C

• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Package

JEDEC STYLE TO-218

Symbol

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

RHRU5070 TO-218 RHRU5070
RHRU5080 TO-218 RHRU5080
RHRU5090 TO-218 RHRU5090
RHRU50100 TO-218 RHRU50100

NOTE: When ordering, use the entire part number.

CATHODE

(FLANGE)

ANODE

K

A

Absolute Maximum Ratings T

C

= +25oC, Unless Otherwise Specified

RHRU5070 RHRU5080 RHRU5090 RHRU50100 UNITS

Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V

RRM

700 800 900 1000 V

Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

RWM

700 800 900 1000 V

DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

R

700 800 900 1000 V

Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I

F(AV)

(TC = +65oC)

50 50 50 50 A

Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

FSM

(Square Wave, 20kHz)

100 100 100 100 A

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I

FSM

(Halfwave, 1 Phase, 60Hz)

500 500 500 500 A

Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

150 150 150 150 W

Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

AVL

40 40 40 40 mj

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . .T

STG

, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175oC

Data Sheet April 1995 File Number 3665.1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

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Electrical Specifications T

C

= +25oC, Unless Otherwise Specified

SYMBOL TEST CONDITION

RHRU5070 RHRU5080 RHRU5090 RHRU50100

UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

V

F

IF = 50A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V
IF = 50A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V

I

R

VR = 700V, TC = +25oC --500---------µA
VR = 800V, TC = +25oC -----500------µA
VR = 900V, TC = +25oC --------500---µA
VR = 1000V, TC = +25oC -----------500µA

I

R

VR = 700V, TC = +150oC --3.0---------mA
VR = 800V, TC = +150oC -----3.0------mA
VR = 900V, TC = +150oC --------3.0---mA
VR = 1000V, TC = +150oC -----------3.0mA

t

RR

IF = 1A, dIF/dt = 100A/µs - -75- -75- -75- -75ns
IF = 50A, dIF/dt = 100A/µs - -95- -95- -95- -95ns

t

A

IF = 50A, dIF/dt = 100A/µs - 54 - - 54 - - 54 - - 54 - ns

t

B

IF = 50A, dIF/dt = 100A/µs - 32 - - 32 - - 32 - - 32 - ns

Q

RRIF

= 50A, dIF/dt = 100A/µs - 125 - - 125 - - 125 - - 125 - nC

C

J

VR = 10V, IF = 0A - 150 - - 150 - - 150 - - 150 - pF

R

θJC

- - 1.0 - - 1.0 - - 1.0 - - 1.0oC/W

DEFINITIONS

VF= Instantaneous forward voltage (pw = 300µs, D = 2%).

I

R

= Instantaneous reverse current.

t

RR

= Reverse recovery time (Figure 2), summation of tA+tB.

t

A

= Time to reach peak reverse current (See Figure 2).

t

B

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

R

θJC

= Thermal resistance junction to case.

E

AVL

= Controlled avalanche energy (See Figure 10 and Figure 11).

pw = Pulse width.

D = Duty cycle.

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. WAVEFORMS AND DEFINITIONS

C1

L

LOOP

DUT

Q

3

R

3

Q

4

Q

2

R

1

R

2

-V

4

Q

1

-V

2

0

0

+V

1

t

1

t

2

t

3

R

4

+V

3

V1 AMPLITUDE CONTROLS I

F

V2 AMPLITUDE CONTROLS dIF/dt
L

1

= SELF INDUCTANCE OF

t

1

≥ 5t

A(MAX)

t2 > t

RR

t3 > 0

L

1

R

4

t

A(MIN)

10

≤

R4+ L

LOOP

I

F

t

RR

t

A

t

B

0

I

RM

0.25 I

RM

V

R

V

RM

dI

F

dt

RHRU5070, RHRU5080, RHRU5090, RHRU50100