Intersil RHRU50120 Datasheet
RHRU50120
April 1995 File Number 3946.1
50A, 1200V Hyperfast Diode
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t
< 85ns). They have half the
RR
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU50120 TO-218 RHRU50120
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
C
Symbol
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 50oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
AVL
STG
, T
K
A
RHRU50120 UNITS
1200 V
1200 V
R
D
J
1200 V
50 A
100 A
500 A
150 W
50 mj
-65 to +175
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRU50120
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU50120 LIMITS
SYMBOL MIN TYP MAX UNITS
V
F
IF = 50A, TC = +25oC - - 3.2 V
TEST CONDITION
IF = 50A, TC = +150oC - - 2.6 V
I
R
VR = 1200V, TC = +25oC - - 500 µA
VR = 1200V, TC = +150oC - - 1.0 mA
t
RR
IF = 1A, dIF/dt = 100A/µs--85ns
IF = 50A, dIF/dt = 100A/µs - - 100 ns
t
A
t
B
Q
RR
C
J
R
θJC
IF = 50A, dIF/dt = 100A/µs - 50 - ns
IF = 50A, dIF/dt = 100A/µs - 40 - ns
IF = 50A, dIF/dt = 100A/µs - 240 - nC
VR = 10V, IF = 0A - 150 - pF
- - 1.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
I
= Instantaneous reverse current.
R
= Reverse recovery time (See Figure 2), summation of tA + tB.
t
RR
= Time to reach peak reverse current (See Figure 2).
t
A
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
B
= Reverse recovery charge.
Q
RR
= Junction Capacitance.
C
J
R
= Thermal resistance junction to case.
θJC
= Controlled avalanche energy. (See Figures 10 and 11).
E
AVL
pw = pulse width.
D = duty cycle.
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
t
3
R
3
FIGURE 1. tRR TEST CIRCUIT
+V
3
≥ 5t
Q
L
LOOP
4
R
t
1
t2 > t
t3 > 0
L
R
4
1
4
RR
≤
DUT
A(MAX)
t
A(MIN)
10
dI
F
I
F
dt
0
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
R
1
Q
1
R
2
Q
3
C1
Q
2
-V
4
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
2
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