intersil RHRU5090, RHRU50100 DATA SHEET
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RHRU5070, RHRU5080, RHRU5090, RHRU50100
Data Sheet April 1995 File Number 3665.1
50A, 700V - 1000V Hyperfast Diodes
RHRU5070, RHRU5080, RHRU5090 and RHRU50100
(TA49066) are hyperfast diodes with soft recovery characteristics (t
< 75ns). They have half the recovery time of
RR
ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU5070 TO-218 RHRU5070
RHRU5080 TO-218 RHRU5080
RHRU5090 TO-218 RHRU5090
RHRU50100 TO-218 RHRU50100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
CATHODE
(FLANGE)
ANODE
C
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = +65oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . .T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
STG
Symbol
K
A
RHRU5070 RHRU5080 RHRU5090 RHRU50100 UNITS
700 800 900 1000 V
700 800 900 1000 V
700 800 900 1000 V
R
50 50 50 50 A
100 100 100 100 A
500 500 500 500 A
150 150 150 150 W
D
AVL
, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175oC
40 40 40 40 mj
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRU5070, RHRU5080, RHRU5090, RHRU50100
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU5070 RHRU5080 RHRU5090 RHRU50100
SYMBOL TEST CONDITION
V
IF = 50A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V
F
IF = 50A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V
I
VR = 700V, TC = +25oC --500---------µA
R
VR = 800V, TC = +25oC -----500------µA
VR = 900V, TC = +25oC --------500---µA
VR = 1000V, TC = +25oC -----------500µA
I
VR = 700V, TC = +150oC --3.0---------mA
R
VR = 800V, TC = +150oC -----3.0------mA
VR = 900V, TC = +150oC --------3.0---mA
VR = 1000V, TC = +150oC -----------3.0mA
t
IF = 1A, dIF/dt = 100A/µs - -75- -75- -75- -75ns
RR
IF = 50A, dIF/dt = 100A/µs - -95- -95- -95- -95ns
t
IF = 50A, dIF/dt = 100A/µs - 54 - - 54 - - 54 - - 54 - ns
A
t
IF = 50A, dIF/dt = 100A/µs - 32 - - 32 - - 32 - - 32 - ns
B
Q
RRIF
C
J
R
θJC
= 50A, dIF/dt = 100A/µs - 125 - - 125 - - 125 - - 125 - nC
VR = 10V, IF = 0A - 150 - - 150 - - 150 - - 150 - pF
- - 1.0 - - 1.0 - - 1.0 - - 1.0oC/W
DEFINITIONS
VF= Instantaneous forward voltage (pw = 300µs, D = 2%).
= Instantaneous reverse current.
I
R
= Reverserecovery time (Figure 2), summation of tA+tB.
t
RR
t
= Time to reach peak reverse current (See Figure 2).
A
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
t
B
= Thermal resistance junction to case.
R
θJC
E
= Controlled avalanche energy (See Figure 10 and Figure 11).
AVL
pw = Pulse width.
D = Duty cycle.
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
t
3
R
3
FIGURE 1. tRR TEST CIRCUIT
+V
3
t
≥ 5t
1
R
t2 > t
t3 > 0
L
R
4
1
4
A(MAX)
RR
t
A(MIN)
≤
DUT
10
0
dI
F
I
F
dt
t
RR
t
A
V
RM
t
B
0.25 I
RM
I
RM
V
R
Q
C1
2
L
LOOP
Q
4
-V
4
R
1
Q
1
R
2
Q
3
FIGURE 2. WAVEFORMS AND DEFINITIONS
2
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