Intersil RHRU150100, RHRU15090 Datasheet
RHRU15090, RHRU150100
April 1995 File Number 3589.2
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (T A49072) are hyperfast
diodes with soft recovery characteristics (t
< 90ns). They
RR
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU15090 TO-218 RHRU15090
RHRU150100 TO-218 RHR150100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery<90ns
o
• Operating Temperature+175
C
• Reverse Voltage Up To1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
CATHODE
(FLANGE)
ANODE
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = +42oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (L = 40mH). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= +25oC, Unless Otherwise Specified
C
Symbol
RHRU15090 RHRU150100 UNITS
RRM
RWM
R
F(AV)
FSM
FSM
D
AVL
, TJ-65 to +175 -65 to +175
STG
900 1000 V
900 1000 V
900 1000 V
150 150 A
300 300 A
1500 1500 A
375 375 W
50 50 mj
K
A
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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| Copyright © Intersil Corporation 1999
RHRU15090, RHRU150100
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
RHRU15090 RHRU150100
SYMBOL TEST CONDITION
V
F
V
F
I
R
IF = 150A, TC = +25oC - - 3.0 - - 3.0 V
IF = 150A, TC = +150oC - - 2.5 - - 2.5 V
VR = 900V, TC = +25oC - - 500 - - - µA
MIN TYP MAX MIN TYP MAX
VR = 1000V, TC = +25oC -----500µA
I
R
VR = 900V, TC = +150oC - - 3.0 - - - mA
VR = 1000V, TC = +150oC -----3.0mA
t
RR
IF = 1A, dIF/dt = 100A/µs - -90- -90ns
IF = 150A, dIF/dt = 100A/µs - - 100 - - 100 ns
t
A
t
B
R
θJC
IF = 150A, dIF/dt = 100A/µs - 65 - - 65 - ns
IF = 150A, dIF/dt = 100A/µs - 30 - - 30 - ns
- - 0.4 - - 0.4
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
I
= Instantaneous reverse current.
R
= Reverse recovery time (See Figure 2), summation of tA + tB.
t
RR
= Time to reach peak reverse current (See Figure 2).
t
A
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
B
= Thermal resistance junction to case.
R
θJC
= Controlled avalanche energy (See Figures 7 and 8).
E
AVL
pw = pulse width.
D = duty cycle.
UNITS
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF R
L
1
+L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
4
t
3
R
3
R
1
Q
1
R
2
C1
Q
3
+V
3
t1≥ 5t
Q
2
L
LOOP
Q
4
-V
4
t2 > t
t3 > 0
L
R
R
4
1
4
RR
≤
DUT
A(MAX)
t
A(MIN)
10
dI
F
I
F
dt
0
t
RR
t
A
V
RM
t
B
0.25 I
RM
I
RM
V
R
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
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reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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