Intersil RHRP860 Datasheet

RHRP840, RHRP860
Data Sheet January 2000 File Number 3668.2
8A, 400V - 600V Hyperfast Diodes
The RHRP840 and RHRP860 are hyperfastdiodeswithsoft recovery characteristics (t
< 30ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducingpower loss in the switching transistors.
Formerly developmental type TA49059.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP840 TO-220AC RHRP840 RHRP860 TO-220AC RHRP860
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . 175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE (FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 150oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
=25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
RHRP840 RHRP860 UNITS
400 600 V 400 600 V 400 600 V
R
88A
16 16 A
100 100 A
D
AVL
, TJ-65 to 175 -65 to 175
75 75 W 20 20 mJ
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
RHRP840, RHRP860
Electrical Specifications T
=25oC, Unless Otherwise Specified
C
RHRP840 RHRP860
SYMBOL TEST CONDITION
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A - - 2.1 - - 2.1 V I
= 8A, TC = 150oC - - 1.7 - - 1.7 V
F
VR = 400V - - 100 - - - µA
= 600V - - - - - 100 µA
V
R
= 400V, TC = 150oC - - 500 - - - µA
V
R
V
= 600V, TC = 150oC -----500µA
R
IF = 1A, dIF/dt = 200A/µs--30--30ns
= 8A, dIF/dt = 200A/µs--35--35ns
I
F
IF = 8A, dIF/dt = 200A/µs - 18 - - 18 - ns IF = 8A, dIF/dt = 200A/µs - 10 - - 10 - ns IF = 8A, dIF/dt = 200A/µs - 56 - - 56 - nC VR = 10V, IF = 0A - 25 - - 25 - pF
--2--2oC/W
DEFINITIONS
= Instantaneous forward voltage (pw = 300µs, D = 2%).
V
F
IR = Instantaneous reverse current. trr= Reverse recovery time (See Figure 9), summation of ta+tb.
ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
UNITSMIN TYP MAX MIN TYP MAX
Typical Performance Curves
40
10
175oC 25oC100oC
, FORWARD CURRENT (A)
F
I
1
0.5
0.5
0
VF, FORWARD VOLTAGE (V)
1.5
1
2 2.5
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01 100
0 200 400 600300 500
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC
RHRP840, RHRP860
Typical Performance Curves (Continued)
35
TC = 25oC, dIF/dt = 200A/µs
30
25
20
15
10
t, RECOVERY TIMES (ns)
5
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
4
81
60
TC = 100oC, dIF/dt = 200A/µs
50
40
30
20
t, RECOVERY TIMES (ns)
10
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
90
TC = 175oC, dIF/dt = 200A/µs
75
60
45
30
t, RECOVERY TIMES (ns)
15
0
0.5
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
814
10
8
6
4
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
125
SQ. WAVE
135
145
TC, CASE TEMPERATURE (oC)
155
DC
165
175
814
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT
60
50
40
30
20
10
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
FIGURE 6. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
CONTROL I
1 ANDt2
V
GE
I
MAX
L = 40mH R < 0.1 E
AVL
Q
1
t
= 1A
= 1/2LI2 [V
= IGBT (BV
1
R(AVL)
CES
F
R
G
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
- VDD)]
R(AVL)
> DUT V
R(AVL)
L
DUT
IGBT
)
RHRP840, RHRP860
CURRENT
SENSE
LR
dI
F
I
F
+
V
DD
-
0
dt
t
rr
t
a
V
AVL
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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