Intersil RHRP8120 Datasheet
RHRP8120
Data Sheet January 2000 File Number 3660.2
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery
characteristics (t
< 55ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49096.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP8120 TO-220AC RHRP8120
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<55ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 140oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RHRP8120 UNITS
1200 V
1200 V
R
D
J
1200 V
8A
16 A
100 A
75 W
20 mJ
-65 to 175
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
RHRP8120
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 8A - - 3.2 V
IF = 8A, TC = 150oC - - 2.6 V
I
R
VR = 1200V - - 100 µA
VR = 1200V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 200A/µs--55ns
IF = 8A, dIF/dt = 200A/µs--70ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A, dIF/dt = 200A/µs - 30 - ns
IF = 8A, dIF/dt = 200A/µs - 20 - ns
IF = 8A, dIF/dt = 200A/µs - 165 - nC
VR = 10V, IF = 0A - 25 - pF
--2oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse Recovery Charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse Width.
D = Duty Cycle.
Typical Performance Curves
40
10
FORWARD CURRENT (A)
175oC
F,
I
1
0.5
0123 54
100oC
25oC
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
500
100
, REVERSE CURRENT (µA)
R
I
0.01
0.001
0.1
175oC
10
1
200
0
VR, REVERSE VOLTAGE (V)
400
100oC
25oC
600
800
1000
1200
2
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