RHRP640CC, RHRP650CC, RHRP660CC
January 1998 File Number 4464
6A, 400V - 600V Hyperfast Dual Diodes
RHRP640CC, RHRP650CC and RHRP660CC are hyperfast
dual diodes with soft recovery characteristics (t
< 30ns).
rr
They have half the recovery time of ultrafast diodes and are
silicon nitride passivated ion-implanted hepaticas planar
construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and otherpower switching applications. Their low stored charge
and ultrafast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
Formerly developmental type TA49057.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP640CC TO-220AB RHRP640C
RHRP650CC TO-220AB RHRP650C
RHRP660CC TO-220AB RHRP660C
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Symbol
K
C
Package
CATHODE
(FLANGE)
A
1
JEDEC TO-220AB
A
2
ANODE 2
CATHODE
ANODE 1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
RHRP640CC, RHRP650CC, RHRP660CC
Absolute Maximum Ratings (Per Leg) T
= 25oC, Unless Otherwise Specified
C
RHRP640CC RHRP650CC RHRP660CC UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
400 500 600 V
400 500 600 V
400 500 600 V
R
666A
TC = 152oC
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
12 12 12 A
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
60 60 60 A
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .T
STG,TJ
D
AVL
50 50 50 W
10 10 10 mJ
-65 to 175 -65 to 175 -65 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications (Per Leg) T
= 25oC, Unless Otherwise Specified
C
pkg
300
L
260
300
260
300
260
RHRP640CC RHRP650CC RHRP660CC
SYMBOL TEST CONDITION
V
F
IF = 6A - - 2.1 - - 2.1 - - 2.1 V
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
IF = 6A, TC = 150oC - - 1.7 - - 1.7 - - 1.7 V
I
R
VR = 400V - - 100 ------µA
VR = 500V -----100---µA
VR = 600V --------100µA
VR = 400V, TC = 150oC--500------µA
VR = 500V, TC = 150oC-----500---µA
VR = 600V, TC = 150oC--------500µA
t
rr
IF = 1A, dIF/dt = 200A/µs- -30- -30- -30ns
IF = 6A, dIF/dt = 200A/µs- -35- -35- -35ns
t
a
t
b
Q
RR
C
R
θJC
IF = 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns
IF = 6A, dIF/dt = 200A/µs - 8.5 - - 8.5 - - 8.5 - ns
IF = 6A, dIF/dt = 200A/µs - 45 - - 45 - - 45 - nC
VR = 10V, IF = 0A - 20 - - 20 - - 20 - pF
J
--3--3--3oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
= Instantaneous reverse current.
I
R
t
= Reverse recovery time (See Figure 9), summation of ta + tb.
rr
= Time to reach peak reverse current (See Figure 9).
t
a
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
b
= Reverse recovery charge.
Q
RR
= Junction Capacitance.
C
J
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
o
C
o
C
o
C
2