Intersil RHRD660S Datasheet
RHRD660, RHRD660S
Data Sheet January 2000
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (t
< 30ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switchingpower
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors .
Formerly developmental type TA49057.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD660 TO-251 RHR660
RHRD660S TO-252 RHR660
NOTE: Whenordering, use theentire part number. Add thesuffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
File Number 3746.3
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 152oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
JEDEC STYLE TO-252
CATHODE
ANODE
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
CATHODE
(FLANGE)
RHRD660, RHRD660S UNITS
600 V
600 V
600 V
6A
12 A
60 A
50 W
10 mJ
-65 to 175
300
260
AVL
, T
R
D
J
L
o
C
o
C
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
RHRD660, RHRD660S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 6A - - 2.1 V
IF = 6A, TC = 150oC - - 1.7 V
I
R
VR = 600V - - 100 µA
VR = 600V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 200A/µs- - 30 ns
IF = 6A, dIF/dt = 200A/µs- - 35 ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 6A, dIF/dt = 200A/µs - 16 - ns
IF = 6A, dIF/dt = 200A/µs - 8.5 - ns
IF = 6A, dIF/dt = 200A/µs - 45 - nC
VR = 10V, IF = 0A - 20 - pF
--3oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30
10
, FORWARD CURRENT (A)
F
I
1
0.5
175oC
0 0.5 2.5121.5
100oC
VF, FORWARD VOLTAGE (V)
25oC
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE
1000
100
10
1
, REVERSE CURRENT (µA)
0.1
R
I
0.01
0 600400300200
175oC
100oC
25oC
100 500
, REVERSE VOLTAGE (V)
V
R
2
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