Intersil RHR1K160D Datasheet
RHR1K160D
[ /Title
(RHR1
K160D
)
/Subject
(1A,
600V
Hyperfast
Dual
Diode)
/Autho
r ()
/Keywords
(Intersil
Corporation,
semiconductor,
Avalanche
Energy
Rated,
Switch
ing
Power
Supplies,
Power
Switch
ing
Circuits,
Rectifiers,
Data Sheet January 2000
1A, 600V Hyperfast Dual Diode
The RHR1K160D is a hyperfastdual diode withsoft recovery
characteristics (t
time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits reducing power loss
in the switching transistors.
Formerly developmental type TA49185.
< 25ns). It has about half the recovery
rr
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<25ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Thermal Impedance SPICE® Model
• Thermal Impedance SABER© Model
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
RHR1K160D MS-012AA RHR1K160D
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e.,
RHR1K160D96.
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
Absolute Maximum Ratings (Per Leg) T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TA = 65oC
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Square Wave, 20kHz
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 11 and 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
A
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Symbol
ANODE 1 (2)
ANODE 2 (3)
RRM
RWM
F(AV)
FRM
FSM
STG,TJ
AVL
pkg
R
D
L
NC (1)
NC (4)
File Number 4788
o
C
CATHODE 1 (8)
CATHODE 1 (7)
CATHODE 2 (6)
CATHODE 2 (5)
RHR1K160D UNITS
600 V
600 V
600 V
1A
2A
10 A
2.5 W
5mJ
-55 to 150
300
260
o
C
o
C
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER is a Copyright of Analogy, Inc.
RHR1K160D
Electrical Specifications (Per Leg) T
= 25oC, Unless Otherwise Specified
A
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 1A - - 2.1 V
IF = 1A, TA = 150oC - - 1.7 V
I
R
VR = 600V - - 100 µA
VR = 600V, TA = 150oC - - 500 µA
t
rr
t
a
t
b
Q
RR
C
J
R
θJA
IF = 1A, dIF/dt = 200A/µs--25ns
IF = 1A, dIF/dt = 200A/µs - 10.5 - ns
IF = 1A, dIF/dt = 200A/µs-5-ns
IF = 1A, dIF/dt = 200A/µs - 20 - nC
VR = 10V, IF = 0A - 10 - pf
Pad Area = 0.483 in2(Note 1) - - 50
Pad Area = 0.027 in2(Note 2) (Figure 13) - - 201
Pad Area = 0.006 in2(Note 2) (Figure 13) - - 239
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr= Reverse recovery time (See Figure 10), summation of ta+tb.
ta = Time to reach peak reverse current (See Figure 10).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 10).
Qrr = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to ambient.
θJA
pw = Pulse width.
D = Duty cycle.
NOTES:
1. Measured using FR-4 copper board at 0.8 seconds.
2. 2. Measured using FR-4 copper board at 1000 seconds.
o
o
o
C/W
C/W
C/W
Typical Performance Curve
10
100oC
1
, FORWARD CURRENT (A)
F
I
0.1
0 0.5 1 1.5 2 2.5 4
150oC
VF, FORWARD VOLTAGE (V)
25oC
3.53
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
10
1
0.1
REVERSE CURRENT ( A)
0.01
R,
I
0.001
0 600100 500200
o
C
150
o
100
C
25oC
300 400
VR, REVERSE VOLTAGE (V)
Typical Performance Curve (Continued)
RHR1K160D
20
TA = 25oC, dIF/dt = 200A/µs
16
12
8
4
t, RECOVERY TIMES (ns)
0
0.1
t
rr
t
a
t
b
0.5
IF, FORWARD CURRENT (A)
1
35
TA = 100oC, dIF/dt = 200A/µs
30
25
20
15
10
t, RECOVERY TIMES (ns)
5
0
0.1
t
rr
t
b
t
a
0.5
IF, FORWARD CURRENT (A)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
50
TA = 150oC, dIF/dt = 200A/µs
40
30
20
t
rr
t
b
1.0
0.8
0.6
0.4
SQ. WAVE
DC
R
θJA
= 50oC/W
1
t, RECOVERY TIMES (ns)
10
0
0.1
a
0.5
IF, FORWARD CURRENT (A)
1
0.2
, AVERAGE FORWARD CURRENT (A)
0
F(AV)
I
50 75 12525 150100
T
, AMBIENT TEMPERATURE (oC)
A
t
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
50
40
30
20
10
, JUNCTION CAPACITANCE (pF)
J
C
0
0 20 40 60 10080
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
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