Intersil RFV10N50BE Datasheet
SEMICONDUCTOR
August 1995
RFV10N50BE
10A, 500V, Fast Switching N-Channel
Enhancement-Mode Power MOSFETs
Features
• 10A, 500V
DS(ON)
= 0.480Ω
•r
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
Description
The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high
voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the
main MOSFET is controlled by Gate 1 (G
controlled by Gate 2 (G
), is distributed throughout the structure. Gate
2
2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off
(typically less than 25ns) when desired. A separate return connection,
Source Kelvin (S
), is supplied for the gate drive circuit to avoid volt-
K
age induced transients from the output circuit during switching. The
RFV10N50BE can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFV10N50BE TO-247 V10N50BE
NOTE: When ordering use the entire part number.
Formerly developmental type T A9881.
). The control MOSFET,
1
Package
JEDEC STYLE 5 LEAD TO-247
Terminal Diagram
G
1
G
2
S
K
D
S
Absolute Maximum Ratings T
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 2 KV
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 W/oC
Control FET Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.17 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
= +25oC
C
500 V
+14, -0.3 V
+14, -0.3 V
10 A
25 A
Refer to UIS Curve
1.5 A
50 mJ
156 W
21 W
-55 to +150
STG
DSS
GS
GS
DM
AS
AS
AS
, T
D
D
D
J
File Number 3377.1
1
UNITS
o
C
Specifications RFV10N50BE
Electrical Specifications Case Temperature (T
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate-Source Leakage Current I
On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Source Charge Q
Gate Drain (“Miller”) Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance R
Thermal Resistance R
DSSID
GS(TH)VGS
DSS
GSS
DS(ON)ID
ON
D(ON)
R
D(OFF)
F
OFF
G10
GS
GD
ISS
OSS
RSS
θJC
θJA
) = +25oC, Unless Otherwise Specified
C
LIMITS
UNITSMIN TYP MAX
= 0.25mA, VGS = 0V 500 - - V
= VDS, ID = 0.25mA 2 - 4 V
VDS = 500V,
VGS = 0V
TC = +25oC--1µA
T
= +125oC - - 250 µA
C
VGS = +12V, VGS = -0.3V - - ±500 nA
= 10A, VGS = 10V - - 0.480 Ω
VDD = 250V, ID = 10A, RL = 25Ω,
V
= V
GS2
= 20Ω
= +10V, R
GS1
R
GS2
GS1
= 6.25Ω,
- - 75 ns
-20-ns
-30-ns
-21-ns
-5-ns
- - 50 ns
VGS = 0V to 10V VDD = 400V,
ID = 10A,
RL = 40Ω
- 145 190 nC
-1722nC
-5774nC
VDS = 25V, VGS = 0V, f = 1MHz - 3800 - pF
- 290 - pF
-75-pF
Junction to Case - - 0.8
Junction to Ambient - - 40
o
C/W
o
C/W
Control FET Specifications
PARAMETER SYMBOL TEST CONDITIONS
Static Drain to Source r
DS(ON)
Drain Source Breakdown Voltage BV
Gate Threshold Voltage V
Total Gate Charge Q
DSS
GS(TH)
G10
VGS = 10V, ID = 1.0A - 1.6 - Ω
ID = 1.0mA, VGS = 0V 14 15 - V
VDS = VGS, ID = 0.25mA 2 - 4 V
ID = 1.0A, VGS = 10V - - 5 nC
Source-Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS
Continuous Source Current I
Pulsed Source Current I
Forward Voltage V
Reverse Recovery Time t
SM
SD
RR
S
ISD = 10A, VGS = 0V - - 1.4 V
ISD = 10A, VGS = 0V, dISD/dt = 100A/µs - - 750 ns
LIMITS
UNITSMIN TYP MAX
LIMITS
UNITSMIN TYP MAX
- - 10 A
- - 25 A
2
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