Intersil RFT3055LE Datasheet
RFT3055LE
Data Sheet August 1999
2.0A, 60V, 0.150 Ohm, N-Channel, Logic
Level, ESD Rated, Power MOSFET
This product is an N-Channel powerMOSFETmanufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. It was designed foruse in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Formerly developmental type TA49158.
Ordering Information
PART NUMBER PACKAGE BRAND
RFT3055LE SOT-223 3055L
NOTE: RFT3055LE is available only in tape and reel.
File Number
Features
• 2.0A, 60V
•r
• 2kV ESD Protected
• Temperature Compensating PSPICE
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
= 0.150Ω
DS(ON)
Components to PC Boards”
®
Model
Symbol
D
G
4537.3
Packaging
S
SOT-223
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
8-143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFT3055LE
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
A
RFT3055LE UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
60 V
60 V
±10 V
Drain Current
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
AS
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
2.0
Figure 5
Figures 6, 16, 17
1.1
9.09
-55 to 150
300
260
A
W
mW/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V (Figure 11) 60 - - V
= VDS, ID = 250µA (Figure 10) 1 - 2 V
VDS = 60V, VGS = 0V - - 1 µA
VDS = 60V, VGS = 0V, TA = 150oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
GSS
ON
OFF
g(5)
g(TH)
VGS = ±10V - - 10 µA
= 2.0A, VGS = 5V (Figure 9) - 0.110 0.150 Ω
VDD = 30V, ID≅ 2.0A,
RL = 15Ω, VGS= 5V,
RGS = 5Ω
(Figure 12)
r
- - 120 ns
-10-ns
-70-ns
-30-ns
f
-25-ns
- - 85 ns
= 0V to 10V VDD = 30V,
VGS = 0V to 5V - 15 18 nC
VGS = 0V to 1V - 1.0 1.2 nC
ID≅ 2.0A,
RL = 15Ω
I
= 1.0mA
g(REF)
-2835nC
(Figure 15)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R
ISS
OSS
RSS
θJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
- 850 - pF
- 170 - pF
- 100 - pF
Pad Area = 0.171 in2 (see note 2) - - 110
Pad Area = 0.068 in
Pad Area = 0.026 in
2
2
- - 128
- - 147
o
o
o
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Reverse Recovery Time t
NOTE:
2. 110oC/W measured using FR-4 board with 0.171in2 footprint for 1000 seconds.
8-144
ISD = 2.0A - - 1.5 V
ISD = 2.0A, dISD/dt = 100A/µs - - 100 ns
rr
RFT3055LE
Typical Performance Curves
Unless otherwise specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
2.5
R
= 110oC/W
θJA
2.0
1.5
1.0
, DRAIN CURRENT (A)
D
I
0.5
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
R
= 110oC/W
θJA
0.1
, NORMALIZED
JA
θ
Z
THERMAL IMPEDANCE
-3
SINGLE PULSE
-2
10
0.01
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
10
1
R
= 110oC/W
, DRAIN CURRENT (A)
0.1
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.01
θJA
DS(ON)
0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
TA = 25oC
-1
10
0
10
t, RECTANGULAR PULSE DURATION (s)
30
100µs
10
1ms
10ms
100ms
DC
200
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1
-3
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
10
TA = 25oC
VGS = 5V
-2
10
10
P
DM
1/t2
x R
JA
θ
2
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
-1
0
10
t, PULSE WIDTH (s)
10
t
JA
θ
1
1
t
2
+ T
150 - T
125
R
θJA
A
10
A
= 110oC/W
2
10
3
3
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
8-145
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