Intersil RFT1P06E Datasheet

RFT1P06E

Data Sheet August 1999

1.4A, 60V, 0.285 Ohm, ESD Rated,
P-Channel Power MOSFET

These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA49044.

Ordering Information

PART NUMBER PACKAGE BRAND

RFT1P06E SOT-223 R1P06E

NOTE: RFT1P06E is available only in tape and reel.

File Number

Features

• 1.4A, 60V

•r

• 2kV ESD Protected

• Temperature Compensating PSPICE

• SPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 150

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 0.285Ω

DS(ON)

o

C Operating Temperature

Components to PC Boards”

®

Model

Symbol

D

4495.1

Packaging

G

S

SOT-223

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-171

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFT1P06E

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

RFT1P06E UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

-60 V

-60 V

±20V V

Drain Current

Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

1.4

Figure 5

Figures 6, 14, 15

1.1

9.09

-55 to 150

300
260

A

W

mW/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 11) -60 - - V

= VDS, ID = 250µA (Figure 10) -2 - -4 V
VDS = -60V, VGS = 0V - - -1 µA
VDS = -60V, VGS = 0V, TA = 150oC - - -50 µA

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

GSS

ON

OFF

g(-10)
g(TH)

ISS
OSS
RSS

θJA

VGS = ±10V - - ±100 nA

= 1.4A, VGS = -10V (Figure 9) - 0.215 0.285 W

VDD = -30V, I
RL = 21.4Ω, VGS= -10V,
RGS = 18Ω

r

≅ 1.4A,

D

- - 51 ns

-9-ns

-25-ns

-35-ns

f

-28-ns

- - 95 ns

= 0V to -20V VDD = -30V, ID≅ 1.4A,
VGS = 0V to -10V - 17 20 nC
VGS = 0V to -2V - 1.1 1.3 nC

RL = 21.4Ω
I

= 1.0mA

G(REF)

(Figure 13)

VDS =-25V, VGS = 0V,
f = 1MHz
(Figure 12)

-3137nC

- 600 - pF

- 175 - pF

-40-pF
Pad Area = 0.122in2 (Note 2) - - 110
Pad Area = 0.071in2 (Note 2) - - 119

- - 137

o
o
o

C/W
C/W
C/WPad Area = 0.026in2 (Note 2)

NOTE:

2. 110oC/W measured using FR-4 board with 0.122in2 footprint at 1000 seconds (See Technical Brief 337).

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

4-172

SD

rr

RR

ISD = -1.4A - - -1.25 V
ISD = -1.4A, dISD/dt = -100A/µs--71ns
ISD = -1.4A, dISD/dt = -100A/µs - - 192 nC

Typical Performance Curves

RFT1P06E

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWERDISSIPATIONvs AMBIENT

TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0.01

SINGLE PULSE

-5

10

-4

10

-3

10

10

t, RECTANGULAR PULSE DURATION (s)

, NORMALIZED

θJA

Z

THERMAL IMPEDANCE

0.0001

-1.5

R

= 110 oC/W

θJA

-1.125

-0.75

, DRAIN CURRENT (A)

-0.375

D

I

-0
25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUMCONTINUOUSDRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 110 oC/W

θJA

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

-1

10

0

10

1

10

θJA

1/t2

10

x R

2

+ T

θJA

A

2

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100
TJ = MAX RATED

T

= 25oC

A

-10

-1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-0.1

-1 -10 -100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

V

DSS(MAX)

= -60V

100µs

1ms

10ms

-30

-10

, PEAK CURRENT (A)

DM

I

-1

-3

10

-2

10

TA = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

-1

10

0

10

t, PULSE WIDTH (s)

I = I

o

C DERATE PEAK

25

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-173

150 - T

125

A

2

10

3

10