Intersil RFP8P10 Datasheet
RFP8P10
July 1999 File Number 1496.2Data Sheet
8A, 100V, 0.400 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP8P10 TO-220AB RFP8P10
NOTE: When ordering, include the entire part number.
Packaging
TO-220AB
Features
• 8A, 100V
•r
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.400Ω
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
4-165
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999.
RFP8P10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP8P10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
D
DM
GS
-100 V
-100 V
8A
20 A
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
DSSID
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= -250µA, VGS = 0 -100 V
= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, VGS = 0V TJ= 125oC- - 25 µA
DSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 8A, VGS = -10V (Figures 6, 7) - - 0.400 Ω
= 8A, VGS = -10V - - 3.2 V
≈ 4A, V
RL= 12Ω,
(Figure 10)
= 50V, RG= 50Ω, VGS = -10V
DD
-1860 ns
- 70 150 ns
- 166 275 ns
- 94 175 ns
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
- - 1500 pF
- - 700 pF
- - 300 pF
RFP8P10 - - 1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
4-166
ISD = -4A - - -1.4 V
SD
ISD = -4A, dlSD/dt = -100A/µs - 200 - ns
rr
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