Intersil RFP6P08, RFP6P10 Datasheet
RFP6P08, RFP6P10
Data Sheet October 1999
-6A, -80V and -100V, 0.600 Ohm,
P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for high speed
applications such as switching regulators, switching
convertors, relay drivers, and drivers for high power bipolar
switching transistors.
Formerly developmental type TA09046.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP6P08 TO-220AB RFP6P08
RFP6P10 TO-220AB RFP6P10
NOTE: When ordering, include the entire part number.
File Number 1490.2
Features
• -6A, -80V and -100V
•r
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.600Ω
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
S
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP6P08, RFP6P10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP6P08 RFP6P10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
80 100 V
80 100 V
Continuous Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
66A
20 20 A
±20 ±20 V
60 60 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 0.48 W/oC
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFP6P08 -80 - - V
RFP6P10 -100 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
θJC
= VDS, ID = 250µA (Figure 7) -2 - -4 V
VDS = Rated BV
DSS
VDS = 0.8 x Rated BV
(TC = 125oC) - - 25 µA
DSS
--1µA
VGS = ±20V, VDS = 0V - - ±100 nA
= 6A, VGS = -10V (Figures 5, 6) - - 0.6 Ω
= 6A, VGS = -10V - - -3.6 V
VDD = 50V, I
RG = 50Ω, RL = 16Ω
VGS = -10V
(Figures 13, 14)
D
≈ 6A
-1160ns
- 48 100 ns
- 102 150 ns
- 70 100 ns
VDS = 25V
VGS = 0V
f = 1MHz
(Figure 8)
- - 800 pF
- - 350 pF
- - 150 pF
RFP6P08, RFP6P10 - - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTES:
2. Pulse Test: Pulse Duration ≤ 300µs max, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
2
ISD = -3A - - -1.4 V
SD
ISD = 4A, dlSD/dt = 50A/µs - 150 - ns
rr
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