Intersil RFP4N06L, RFP4N05L Datasheet
RFP4N05L, RFP4N06L
Data Sheet July 1999
4A, 50V and 60V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, rela y driv ers and driv ers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09520.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP4N05L TO-220AB RFP4N05L
RFP4N06L TO-220AB RFP4N06L
NOTE: When ordering, include the entire part number.
File Number
Features
• 4A, 50V and 60V
•r
DS(ON)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.800Ω
Components to PC Boards”
2876.2
Packaging
Symbol
D
G
S
JEDEL TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-274
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP4N05L, RFP4N06L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP4N05L RFP4N06L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
GS
D
DM
D
50 60 V
50 60 V
±10 ±10 V
44A
10 10 A
25 25 W
Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V
RFP4N05L 50 - - V
RFP4N06L 60 - - V
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= VDS, ID = 250µA1-2V
VDS = Rated BV
DSS
VDS = 0.8 x Rated BV
, TC = 125oC - - 250 µA
DSS
--25µA
VGS = ±10V, VDS = 0 - - ±100 nA
= 4A, VGS = 5V - - 3.2 V
= 4A, VGS = 5V, (Figures 6, 7) - - 0.800 Ω
≈ 4A, V
RL= 7.5Ω, VGS = 5V
(Figures 10, 11, 12)
= 30V, RG= 6.25Ω,
DD
-1020ns
- 65 130 ns
-2040ns
-3060ns
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
- - 225 pF
- - 100 pF
- - 40 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-275
ISD = 1A - - 1.4 V
SD
ISD = 2A, dlSD/dt = 100A/µs - 150 - ns
rr
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