Intersil RFP4N05, RFP4N06 Datasheet
RFP4N05, RFP4N06
4A, 50V and 60V, 0.800 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP4N05 TO-220AB RFP4N05
RFP4N06 TO-220AB RFP4N06
NOTE: When ordering, include the entire part number.
Packaging
June 1999 File Number
Features
• 4A, 50V and 60V
•r
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.800Ω
Components to PC Boards”
Symbol
D
G
S
2880.2
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
4-
523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP4N05, RFP4N06
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP4N05 RFP4N06 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
50 60 V
50 60 V
44A
10 10 A
±20 ±20 V
25 25 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperat6ure for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0
RFP4N05 50 - - V
RFP4N06 60 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS,VGS
= 0V, TC= 125oC- - 25 µA
VGS = ±20V, VDS = 0 - - ±100 nA
= 4A, VGS = 10V, (Figures 6, 7) - - 0.800 Ω
= 4A, VGS = 10V - - 3.2 V
≈ 1A, V
RL= 29.2Ω, VGS = 10V,
(Figure 10)
= 30V, RGS= 50Ω,
DD
- 6 15 ns
-1430ns
-1630ns
-1425ns
VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)
- - 200 pF
- - 85 pF
- - 30 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4-
524
ISD = 1A - - 1.4 V
SD
ISD = 2A, dlSD/dt = 50A/µs - 100 - ns
rr
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