Intersil RF1S45N06LESM, RFP45N06LE Datasheet

RFP45N06LE, RF1S45N06LESM

Data Sheet October 1999 File Number 4076.2

45A, 60V, 0.028 Ohm, Logic Level
N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA49177.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP45N06LE TO-220AB FP45N06L
RF1S45N06LESM TO-263AB F45N06LE

NOTE: When ordering,use theentirepart number.Add thesuffix 9Ato
obtain theTO-263AB v ariantin tapeandreel i.e.,RF1S45N06LESM9A.

Features

• 45A, 60V

•r

DS(ON)

• Temperature Compensating PSPICE

= 0.028Ω

®

Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFP45N06LE, RF1S45N06LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP45N06LE, RF1S45N06LESM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

±10 V

45

Refer to UIS Curve

142

0.95

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 13) 60 - - V

= VDS, ID = 250µA (Figure 12) 1 - 3 V
VDS = 55V, VGS = 0V - - 1 µA
VDS = 50V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

ON

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

VGS = ±10V - - 10 µA

= 45A, VGS = 5V (Figure 11) - - 0.028 Ω

VDD = 30V, ID = 45A, RL = 0.67Ω,
VGS = 5V, RGS = 2.5Ω
(Figures 10, 18, 19)

r

- - 215 ns

-20-ns

- 150 - ns

-55-ns

f

-90-ns

- - 185 ns

= 0V to 10V VDD = 48V,
VGS = 0V to 5V - 58 75 nC
VGS = 0V to 1V - 2.4 3.0 nC

ID = 45A,
RL = 1.07Ω
(Figures 20, 21)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)

- 107 135 nC

- 2150 - pF

- 640 - pF

- 240 - pF

- - 1.05

TO-220, and TO-263 - - 80

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

2

ISD = 45A - - 1.5 V
ISD = 45A, dISD/dt = 100A/µs - - 155 ns

rr

RFP45N06LE, RF1S45N06LESM

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 1. NORMALIZED POWER DISSIPATIONvs CASE

TEMPERATURE

2

1

0.5

0.2

0.1

0.1

JC

θ

THERMAL IMPEDANCE

0.01
10

-5

0.05

0.02

0.01
SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

, NORMALIZED

Z

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

CASE TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

2

1/t2

x R

JC

θ

0

10

175

+ T

JC

C

θ

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

T

= MAX RATED

J

100µs

1ms

10ms

200

500

100

THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-5

10

VGS = 10V

-4

10

VGS = 5V

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

t, PULSE WIDTH (s)

-2

10

o

C DERATE PEAK

175 - T

25

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

150

TC = 25oC

C

0

10

1

10