Intersil RF1S45N06SM, RFG45N06, RFP45N06 Datasheet

RFG45N06, RFP45N06, RF1S45N06SM

Data Sheet July 1999 File Number

45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA49028.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG45N06 TO-247 RFG45N06
RFP45N06 TO-220AB RFP45N06
RF1S45N06SM TO-263AB F1S45N06

NOTE: When ordering, use the entire part number. Addthesuffix,9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.

Features

• 45A, 60V

DS(ON)

= 0.028Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

DRAIN

GATE

SOURCE

3574.4

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE
SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-455

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG45N06, RFP45N06, RF1S45N06SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG45N06, RFP45N06

RF1S45N06SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RG = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

DM

GS

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V
45

±20 V

Refer to UIS Curve

131

0.877

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V (Figure 11) 60 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V (125oC) - - 25 µA

DSS

VGS = ±20V - - ±100 nA

= 45A, VGS = 10V (Figure 9) - - 0.028 Ω

VDD = 30V, ID = 45A
RL = 0.667Ω, VGS = +10V
RG = 3.6Ω (Figure 13)

- - 120 ns

-12- ns

-74- ns

-37- ns

-16- ns

- - 80 ns

= 0 to 20V VDD = 48V, ID = 45A,
VGS = 0 to 10V - 67 80 nC
VGS = 0 to 2V - 3.7 4.5 nC

RL = 1.07Ω
I

= 1.5mA

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V
f = 1MHz (Figure 12)

- 125 150 nC

- 2050 - pF

- 600 - pF

- 200 - pF

- - 1.14

o

C/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

4-456

ISD = 45A - - 1.5 V
ISD = 45A, dISD/dt = 100A/µs - - 125 ns

RFG45N06, RFP45N06, RF1S45N06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE

, NORMALIZED TRANSIENT

JC

θ

Z

0.01

0.01
SINGLE PULSE

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

400

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

DSS(MAX)

T

= MAX RATED

J

SINGLE PULSE

= 60V

-3

10

t, RECTANGULAR PULSE DURATION (s)

TC = 25oC

100µs

1ms

10ms

100ms

DC

-2

10

3

10

VGS = 20V

, PEAK CURRENT (A)

2

10

DM

I

40

10-310

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-2

-1

10

t, PULSE WIDTH (ms)

P

DM

t

1

t

2

2

x R

JC

θ

175 TC–

----------------------- ­150

2

10

+ T

C

TC = 25oC

3

10

JC

θ

0

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:



II

=



25



0

10

1

10

1

10

4

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-457