Intersil RF1S42N03LSM, RFP42N03L Datasheet

RFP42N03L, RF1S42N03LSM

Data Sheet July 1999 File Number

42A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFET

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switchingregulators,switchingconverters, motor drivers and
relaydrivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA49030.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP42N03L TO-220AB FP42N03L
RF1S42N03LSM TO-263AB F42N03L

NOTE: When ordering, use the entire part number .Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A.

4302.2

Features

• 42A, 30V

•r

DS(ON)

• Temperature Compensating PSPICE

= 0.025Ω

®

Model

• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

Packaging

DRAIN (FLANGE)

G

S

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN

(FLANGE)

6-267

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP42N03L, RF1S42N03LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP42N03L, RF1S42N03LSM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

30 V
30 V

±10 V

42

Refer to UIS Curve

90

0.606

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V 30 - - V

= VDS, ID = 250µA1-2V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V, TC = 150oC- - 25 µA

DSS

VGS = ±10V - - ±100 nA

= 42A, VGS = 5V (Figure 11) - - 0.025 Ω

VDD = 15V, I
VGS = 5V, RGS = 5Ω
(Figures 10, 18, 19)

≈ 42A, R

D

= 0.357Ω,

L

- - 260 ns

-15- ns

- 160 - ns

-20- ns

-20- ns

- - 60 ns

= 0V to 10V VDD = 24V, I

VGS = 0V to 5V - 30 36 nC

= 0V to 1V - 1.5 1.8 nC

RL = 0.571Ω
I

G(REF)

(Figures 15, 20, 21)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)

D

= 0.6mA

≈ 42A,

-5060nC

- 1650 - pF

- 575 - pF

- 200 - pF

- - 1.65oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

6-268

ISD = 42A - - 1.5 V
ISD = 42A, dISD/dt = 100A/µs - - 125 ns

rr

RFP42N03L, RF1S42N03LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

1

150

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

500

TC = 25oC, TJ = 175oC

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

0.05

0.02

0.01

-5

10

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.5

0.2

0.1

SINGLE PULSE

DS(ON)

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

VGS = 10V

VGS = 5V

100µs

1ms

10ms

100ms
DC

10

50

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

, PEAK CURRENT CAPABILITY (A)

DM

I

10

-5

10

-4

10

-3

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

JC

JC

θ

θ

0

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

-2

10

I = I

o

C DERATE PEAK

175 - T

25

150

-1

10

+ T

C

C

TC = 25oC

0

10

1

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

6-269