Intersil RFP2P08, RFP2P10 Datasheet
Semiconductor
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RFP2P08, RFP2P10
[ /Title
(RFP2P
08,
RFP2P
10)
Subect (-
2A, 80V
and 100V,
3.500
Ohm,
P-Channel
Power
MOSFETs)
Author
()
Key-
words
(Harris
Semiconductor,
P-Channel
Power
MOSFETs,
TO220AB)
Cre-
ator ()
DOCI
NFO
pdf-
Data Sheet
-2A, -80V and -100V, 3.500 Ohm,
P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA_____.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2P08 TO-220AB RFP2P08
RFP2P10 TO-220AB RFP2P10
NOTE: When ordering, use entire part number.
Packaging
DRAIN (FLANGE)
TO-220AB
October 1998 File Number 2870.1
Features
• -2A, -80V and -100V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 3.500Ω
DS(ON)
Components to PC Boards
Symbol
D
G
S
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
| Copyright © Harris Corporation 1998
RFP2P08, RFP2P10
RFP2P08 RFP2P10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
D
DM
GS
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
NOTE:
1. TJ= 25oC to 125oC.
-80 -100 V
-80 -100 V
2
5
2
5
±20 ±20 V
25
0.2
25
0.2
-55 to 150 -55 to 150
300
260
300
260
A
A
W
W/oCaaa
o
C
o
C
o
C
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
ID = -250µA, VGS = 0
RFP2P08 -80 - - V
RFP2P10 -100 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
θJC
= VDS, ID = -250µA -2--4V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - -1 µA
DSS
DSS,VGS
= 0V, TC= 125oC - - -25 µA
VGS = ±20V, VDS = 0V - - ±100 nA
= -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω
= -2A, VGS = -10V - - -7.0 V
= ≈ 1A, VDD = -50V, RG = 50Ω, VGS = -10V,
RL = 46.5Ω
(Figures 10, 11, 12)
- 7 25 ns
-1545ns
-1445ns
-1125ns
VGS = 0V, VDS = -25V, f =1MHz
(Figure 9)
- - 150 pF
- - 80 pF
- - 30 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = -1A - - -1.4 V
ISD = -2A, dISD/dt = 50A/µs - 135 - ns
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