Intersil RFP2P08, RFP2P10 Datasheet

Semiconductor

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RFP2P08, RFP2P10

[ /Title
(RFP2P
08,
RFP2P

10)
Sub­ect (-

2A, ­80V
and ­100V,

3.500

Ohm,
P-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor,
P-Chan­nel
Power
MOS­FETs,
TO­220AB)

Cre-

ator ()

DOCI

NFO
pdf-

Data Sheet

-2A, -80V and -100V, 3.500 Ohm,
P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA_____.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2P08 TO-220AB RFP2P08
RFP2P10 TO-220AB RFP2P10

NOTE: When ordering, use entire part number.

Packaging

DRAIN (FLANGE)

TO-220AB

October 1998 File Number 2870.1

Features

• -2A, -80V and -100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.500Ω

DS(ON)

Components to PC Boards

Symbol

D

G

S

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFP2P08, RFP2P10

RFP2P08 RFP2P10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

NOTE:

1. TJ= 25oC to 125oC.

-80 -100 V

-80 -100 V
2

5

2
5

±20 ±20 V

25

0.2

25

0.2

-55 to 150 -55 to 150

300
260

300
260

A
A

W

W/oCaaa

o

C

o

C

o

C

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

ID = -250µA, VGS = 0

RFP2P08 -80 - - V
RFP2P10 -100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = -250µA -2--4V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

DSS,VGS

= 0V, TC= 125oC - - -25 µA

VGS = ±20V, VDS = 0V - - ±100 nA

= -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω
= -2A, VGS = -10V - - -7.0 V
= ≈ 1A, VDD = -50V, RG = 50Ω, VGS = -10V,

RL = 46.5Ω
(Figures 10, 11, 12)

- 7 25 ns

-1545ns

-1445ns

-1125ns

VGS = 0V, VDS = -25V, f =1MHz
(Figure 9)

- - 150 pF

- - 80 pF

- - 30 pF

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = -1A - - -1.4 V
ISD = -2A, dISD/dt = 50A/µs - 135 - ns