Intersil RFP2N20 Datasheet
RFP2N20
Data Sheet
2A, 200V, 3.500 Ohm, N-Channel Power
MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09289.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2N20 TO-220AB RFP2N20
NOTE: When ordering, include the entire part number.
Packaging
Features
• 2A, 200V
•r
DS(ON)
= 3.500Ω
Symbol
July 1999 File Number
D
G
S
2881.2
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
4-
518
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP2N20
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP2N20 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
DM
GS
D
200 V
200 V
2A
5A
±20 V
25 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
DS(ON)ID
DS(ON)ID
Turn-On Delay Time t
DSSID
DSS
GSS
d(ON)ID
= 250µA, VGS = 0 200 - VGS = VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
DSS
VDS = 0.8 x Rated BV
, TC = 125oC--25µA
DSS
--1µA
VGS = ±20V, VDS = 0 - - ±100 nA
= 2A, VGS = 10V, (Figures 6, 7) - - 3.500 Ω
= 2A, VGS = 10V - - 7.0 V
≈ 1A, V
= 100V, RG= 50Ω
DD
-1525ns
VGS = 10V, RL= 96.5Ω
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
(Figure 10)
r
f
VGS = 0V, VDS = 25V
ISS
-2030ns
-2540ns
-1525ns
- - 200 pF
f = 1MHz, (Figure 9)
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
OSS
RSS
JC
θ
- - 60 pF
- - 25 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4-
519
ISD = 1A - - 1.4 V
SD
ISD = 2A, dlSD/dt = 50A/µs - 200 - ns
rr
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