Intersil RFP2N12, RFP2N15 Datasheet

Semiconductor

/

/

/

/

/

September 1998

RFP2N12,

RFP2N15

2A, 120V and 150V, 1.750 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFP2N
12,
RFP2N1

5)
Subject

(2A,
120V
and
150V,

1.75

Ohm, N­Channel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­220AB)

Creator

()

DOCIN

FO pdf­mark

Features

• 2A, 120V and 150V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.750Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2N12 TO-220AB RFP2N12
RFP2N15 TO-220AB RFP2N15

NOTE: When ordering, include the entire part number.

Packaging

DRAIN

(FLANGE)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA09196.

Symbol

JEDEL TO-220AB

SOURCE

DRAIN

GATE

D

G

S

[ /Page­Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 2882.1

RFP2N12, RFP2N15

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP2N12 RFP2N15 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

120 150 V
120 150 V

22A
55A

±20 ±20 V

25 25 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFP2N12 120 - - V

RFP2N15 150 - - V
Gate Threshold Voltage V
Zero-Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS= Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS

, VGS =

--25µA

0V, TC = 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS

OSS
RSS

θ

VGS = ±20V, VDS = 0V - - ±100 nA

= 2A, VGS = 10V(Figures 6, 7) - - 1.750 Ω
= 2A, VGS = 10V - - 3.5 V

≈ 1A, V

RL= 73Ω, VGS = 10V

r

(Figures 10, 11, 12)

= 75V, RG= 50Ω,

DD

-1725ns

-3045ns

-3045ns

f

VGS = 0V, VDS = 25V

ISS

f = 1MHz, (Figure 9)

-1725ns

- - 200 pF

- - 80 pF

- - 25 pF

JC

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

ISD = -1A - - 1.4 V

SD

ISD = 2A, dlSD/dt = 50A/µs - 150 - ns

rr

5-2