Intersil RFP2N12, RFP2N15 Datasheet

Semiconductor

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September 1998

RFP2N12,

RFP2N15

2A, 120V and 150V, 1.750 Ohm,

N-Channel Power MOSFETs

[ /Title
(RFP2N
12,
RFP2N1

5)
Subject

(2A,
120V
and
150V,

1.75

Ohm, N­Channel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FETs,
TO­220AB)

Creator

()

DOCIN

FO pdf­mark

Features

• 2A, 120V and 150V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.750Ω

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2N12 TO-220AB RFP2N12
RFP2N15 TO-220AB RFP2N15

NOTE: When ordering, include the entire part number.

Packaging

DRAIN

(FLANGE)

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir­cuits.

Formerly developmental type TA09196.

Symbol

JEDEL TO-220AB

SOURCE

DRAIN

GATE

D

G

S

[ /Page­Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

5-1

File Number 2882.1

RFP2N12, RFP2N15

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP2N12 RFP2N15 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

120 150 V
120 150 V

22A
55A

±20 ±20 V

25 25 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFP2N12 120 - - V

RFP2N15 150 - - V
Gate Threshold Voltage V
Zero-Gate Voltage Drain Current I

GS(TH)VGS

DSS

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS= Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS

, VGS =

--25µA

0V, TC = 125oC

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS

OSS
RSS

θ

VGS = ±20V, VDS = 0V - - ±100 nA

= 2A, VGS = 10V(Figures 6, 7) - - 1.750 Ω
= 2A, VGS = 10V - - 3.5 V

≈ 1A, V

RL= 73Ω, VGS = 10V

r

(Figures 10, 11, 12)

= 75V, RG= 50Ω,

DD

-1725ns

-3045ns

-3045ns

f

VGS = 0V, VDS = 25V

ISS

f = 1MHz, (Figure 9)

-1725ns

- - 200 pF

- - 80 pF

- - 25 pF

JC

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

ISD = -1A - - 1.4 V

SD

ISD = 2A, dlSD/dt = 50A/µs - 150 - ns

rr

5-2

RFP2N12, RFP2N15

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

10

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1

DS(ON)

TJ = MAX RATED
T

= 25oC

C

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

3

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

2.5

TC = 25oC

2

1.5

VGS = 20V

VGS = 10V

VGS = 8V
VGS = 7V

VGS = 6V

0.10

, DRAIN CURRENT (A)

D

I

0.01
1

V

DS

10 100

, DRAIN TO SOURCE VOLTAGE (V)

1000

1

, DRAIN CURRENT (A)

D

I

0.5

0

0

123456

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 3. FORWARD BIAS OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

3

VDS= 10V
PULSE DURATION = 80µs

2.5

DUTY CYCLE ≤ 2%

2

1.5

1

, DRAIN TO SOURCE CURRENT (A)

0.5

DS(ON)

I

0

125oC

0246810

V

GS

-40oC

-40oC

, GATE TO SOURCE VOLTAGE (V)

125oC

25oC

5

VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

4

3

2

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

1

DS(ON)

r

0

012

0.5 1.5 2.5
ID,DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESIST ANCE vs DRAIN

CURRENT

VGS = 5V

VGS = 4V

125oC

25oC

-40oC

5-3

RFP2N12, RFP2N15

Typical Performance Curves

2

I

= 2A

D

VGS = 10V

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

240

200

160

120

80

C, CAPACITANCE (pF)

40

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS

= CDS + C

OSS

GD

C

C

C

ISS

OSS

RSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

1.4
VGS = V

DS

ID = 250µA

1.2

1.0

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.6

50 0 50 100 150

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 8. NORMALIZED GATE THRESHOLD V OLTAGE vs

JUNCTION TEMPERATURE

150

DSS
DSS
DSS

= 10V

VDD= BV

I

DSS

G(REF)

I

G(ACT)

112.5

75

37.5

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

VDD= BV

0

20 80

I

G(REF)

I

G(ACT)

DSS

0.75BV

0.50BV

0.25BV

I

G(REF)

DRAIN SOURCE

GATE

SOURCE

VOLTAGE

RL = 75Ω

= 0.095mA

V

GS

VOLTAGE

t, TIME (µs)

NOTE: Refer to Harris Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WA VEFORMS FOR

CONSTANT GATE CURRENT

10

8

6

4

2

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

5-4

Test Circuits and Waveforms

RFP2N12, RFP2N15

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

G

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

V

DS

0

I

G(REF)

FIGURE 14. GATE CHARGE WAVEFORMS

5-5