Intersil RFP2N12L Datasheet
RFP2N12L
Data Sheet April 1999
2A, 120V, 1.750 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N12L is an N-Channel enhancement mode silicon
gate powerfield effect transistorspecifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09528.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2N12L TO-220AB RFP2N12L
NOTE: When ordering, include the entire part number.
File Number
Features
• 2A, 120V
•r
DS(ON)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 1.750Ω
Components to PC Boards”
2874.2
Packaging
Symbol
D
G
S
JEDEL TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-252
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP2N12L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP2N12L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
D
120 V
120 V
±10 V
2A
5A
25 W
Derate Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0 120 - - V
= VDS, ID = 250µA (Figure 8) 1 - 2 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS= 0V - - 1 µA
DSS
, VGS = 0V,
DSS
--25µA
TC = 125oC
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
OSS
VGS = ±10V, VDS = 0V - - ±100 nA
= 2A, VGS = 5V - - 3.5 V
= 2A, VGS = 5V (Figure 6, 7) - - 1.750 Ω
≈ 2A, V
RL= 75Ω, VGS = 5V
r
(Figures 10, 11, 12)
= 75V, RG= 6.25Ω,
DD
-1025ns
-1045ns
-2445ns
f
VGS = 0V, VDS = 25V, f = 1MHz
ISS
(Figure 9)
RSS
JC
θ
-2025ns
- - 200 pF
- - 80 pF
- - 35 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-253
ISD = 2A - - 1.4 V
SD
ISD = 2A, dlSD/dt = 50A/µs - 150 - ns
rr
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