Intersil RFP2N10L, RFP2N08L Datasheet

RFP2N08L, RFP2N10L

Data Sheet July 1999

2A, 80V and 100V, 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic lev el (5V) driving sources in
applications such as programmable controllers, automotiv e
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby f acilitating true on-off pow er control directly
from logic circuit supply voltages.

Formerly developmental type TA0924.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2N08L TO-220AB RFP2N08L
RFP2N10L TO-220AB RFP2N10L

NOTE: When ordering, include the entire part number.

File Number

2872.2

Features

• 2A, 80V and 100V

•r

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 1.050Ω

DS(ON)

Components to PC Boards”

Symbol

Packaging

D

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-248

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP2N08L, RFP2N10L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP2N08L RFP2N10L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D

DM

GS

D

80 100 V
80 100 V

22A
55A

±10 ±10 V

25 25 W

Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSVGS

= 0V, ID = 250µA

RFP2N08L 80 - - V
RFP2N10L 100 - - V

Gate to Threshold Voltage V

GS(TH)VGS

Gate to Source Leakage I
Zero to Gate Voltage Drain Current I

Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

GSS
DSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA 1.0 - 2.0 V
VGS = ±10V, VDS = 0V - - ±100 nA
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1.0 µA

DSS

DSS,VGS

= 0V, TC= 125oC- - 25 µA
= 2A, VGS = 5V - - 2.1 V
= 2A, VGS = 5V, (Figures 6, 7) - - 1.050 Ω
= 2A, VDD = 50V, RG = 6.25Ω,

RL = 25Ω, VGS = 5V
(Figures 10, 11, 12)

-1025ns

-1545ns

-2545ns

-2025ns

VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 9)

- - 200 pF

- - 80 pF

- - 35 pF

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

6-249

ISD= 2A - - 1.4 V

SD

ISD = 2A, dISD/dt = 50A/µs - 100 - ns

rr

RFP2N08L, RFP2N10L

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

1

OPERATION IN THIS AREA
LIMITED BY r

0.1

, DRAIN CURRENT (A)

D

I

0.01
1

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

TJ = MAX RATED, TC = 25oC

RFP2N08L

RFP2N10L

2

10

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

8

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

7

TC= 25oC

6

5

4

3

, DRAIN CURRENT (A)

2

D

I

1

3

10

0

13579

046102

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 10V

VGS = 5.0V

VGS = 4.0V

VGS = 3.0V

VGS = 2.0V

8

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

8

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

7

VDS = 15V

6

5

4

3

2

, DRAIN TO SOURCE CURRENT (A)

TC = 125V

1

DS(ON)

I

0

13462

VGS, GATE TO SOURCE VOLTAGE (V)

TC = 125V

TC = 25V

TC = -40V

TC = -40V

5

2

1.5

1

, DRAIN TO SOURCE

ON RESISTANCE (Ω)

0.5

DS(ON)

r

0

TC = 125V

2

10

TC = 25V

TC = -40V

34

ID,DRAIN CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

56789

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

6-250

VGS = 5V

10

RFP2N08L, RFP2N10L

Typical Performance Curves

ID = 2A, VGS = 5V
PULSE DURATION = 80ms

2.0

DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

-50
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

1000 50 150 200

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

240

200

160

120

80

C, CAPACITANCE (pF)

40

0

10

0 203040 70

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 0.1MHz

= CGS + C

C

ISS

C

= C

RSS

C

GD

≈ CDS + C

OSS

C

ISS

C

OSS

C

RSS

50 60

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

2.0
ID = 250µA

= V

V

DS

GS

1.5

1.0

0.5

THRESHOLD VOLTAGE

NORMALIZED GATE TO

0

-50

0 200

TJ, JUNCTION TEMPERATURE (oC)

50 100 150

FIGURE 8. NORMALIZED GATETO THRESHOLD vs

JUNCTION TEMPERATURE

100

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

RL = 50Ω, VGS = 5V

I

G(REF)

PLATEAU VOLTAGES IN
DESCENDING ORDER:

VDD = BV
VDD = 0.75 BV
VDD = 0.50 BV
VDD = 0.25 BV

SOURCE
VOLTAGE

DRAIN SOURCE VOLTAGE

I

G REF()

20

------------------------ ­I

GACT()

t, TIME (ms)

= 0.094mA

DSS

GATE

DSS
DSS
DSS

I

GREF()

80

------------------------ ­I

GACT()

10

8

6

4

2

0

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuit and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

6-251

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

90%

0

V

GS

10%

0

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

RFP2N08L, RFP2N10L

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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