Intersil RFP2N10L, RFP2N08L Datasheet
RFP2N08L, RFP2N10L
Data Sheet July 1999
2A, 80V and 100V, 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic lev el (5V) driving sources in
applications such as programmable controllers, automotiv e
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby f acilitating true on-off pow er control directly
from logic circuit supply voltages.
Formerly developmental type TA0924.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2N08L TO-220AB RFP2N08L
RFP2N10L TO-220AB RFP2N10L
NOTE: When ordering, include the entire part number.
File Number
2872.2
Features
• 2A, 80V and 100V
•r
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 1.050Ω
DS(ON)
Components to PC Boards”
Symbol
Packaging
D
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-248
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP2N08L, RFP2N10L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP2N08L RFP2N10L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
DM
GS
D
80 100 V
80 100 V
22A
55A
±10 ±10 V
25 25 W
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSVGS
= 0V, ID = 250µA
RFP2N08L 80 - - V
RFP2N10L 100 - - V
Gate to Threshold Voltage V
GS(TH)VGS
Gate to Source Leakage I
Zero to Gate Voltage Drain Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
DSS
r
f
ISS
OSS
RSS
θJC
= VDS, ID = 250µA 1.0 - 2.0 V
VGS = ±10V, VDS = 0V - - ±100 nA
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1.0 µA
DSS
DSS,VGS
= 0V, TC= 125oC- - 25 µA
= 2A, VGS = 5V - - 2.1 V
= 2A, VGS = 5V, (Figures 6, 7) - - 1.050 Ω
= 2A, VDD = 50V, RG = 6.25Ω,
RL = 25Ω, VGS = 5V
(Figures 10, 11, 12)
-1025ns
-1545ns
-2545ns
-2025ns
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 9)
- - 200 pF
- - 80 pF
- - 35 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-249
ISD= 2A - - 1.4 V
SD
ISD = 2A, dISD/dt = 50A/µs - 100 - ns
rr
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