Intersil RFP2N08, RFP2N10 Datasheet
July 1998
Semiconductor
RFP2N08,
RFP2N10
2A, 80V and 100V, 1.05 Ohm,
N-Channel Power MOSFETs
Features
• 2A, 80V and 100V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
1.05Ω
DS(ON)
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2N08 TO-220AB RFP2N08
RFP2N10 TO-220AB RFP2N10
NOTE: When ordering, use entire part number.
Description
These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09282.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1998
5-1
File Number 2883.1
RFP2N08, RFP2N10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP2N08 RFP2N10 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
DM
GS
D
80 100 V
80 100 V
22A
55A
±20 ±20 V
25 25 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150 -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
ID = 250µA, VGS = 0
DSS
RFP2N10 100 - - V
RFP2N08 80 - - V
Gate Threshold Voltage V
GS(TH)VGS
Zero-Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R
DSS
GSS
r
f
ISS
OSS
RSS
θJC
= VDS, ID = 250µA (Figure 8) 2 - 4 V
VDS = Rated BV
V
= 0.8 x Rated BV
DS
, TC = 25oC--1µA
DSS
, TC = 125oC- - 25 µA
DSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 2A, VGS = 10V (Figures 6, 7) - - 1.05 Ω
= 2A, VGS = 10V - - 2.1 V
≈ 1A, V
RL = 25Ω, VGS= 10V
(Figures 10, 11, 12)
= 50V, RG = 50Ω,
DD
-1725ns
-3045ns
-3045ns
-1725ns
VGS = 0V, VDS = 25V, f =1MHz
(Figure 9)
- - 200 pF
- - 80 pF
- - 25 pF
--5
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
Diode Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
ISD = 2A - 1.4 V
ISD = 2A, dISD/dt = 50A/µs - 100 - ns
rr
5-2
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