Intersil RFP25N05L Datasheet

RFP25N05L

Data Sheet July 1999

25A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFET

The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses featuresizesapproachingthoseof
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relaydriversandemitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP25N05L TO-220AB RFP25N05L

NOTE: When ordering, include the entire part number.

File Number

2270.3

Features

• 25A, 50V

•r

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047Ω

DS(ON)

Components to PC Boards”

Symbol

D

Packaging

G

S

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-243

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP25N05L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP25N05L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DS

D

DM

50 V
50 V
25 A

65 A

Single Pulse Avalanche Energy Rating (See Figures 4, 15, and 16). . . . . . . . . . . . . . . . . . . . . . Refer to UIS SOA Curve

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

GS

D

±10 V

60 W

Linear Derating Factor above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Gate to Source Leakage I
Zero Gate Voltage Drain Current I

DSS

GS(TH)

GSS
DSS

VGS = 0V, ID = 250µA (Figure 10) 50 - - V
VGS = VDS, ID = 250µA (Figure 9) 1.0 - 2.0 V
VGS = ±10V, VDS = 0V - - ±100 nA
VDS = 40V, VGS = 0V - - 1.0 µA
TC = 150oC--50µA

Drain to Source On Resistance (Note 2) r

DS(ON)

VGS = 5V, ID = 25A (Figures 7, 8) - - 0.047 Ω

VGS = 4V, ID = 25A - - 0.056 Ω
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge

(OFF)

Q

g(TOT)

(Gate to Source + Gate to Drain)
Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

(ON)

g(5)

g(TH)

θJC
θJA

VDD = 25V, ID =12.5A

RL = 2Ω, RGS = 5Ω

(Figures 15, 16)

r

- - 60 ns

-15- ns

-35- ns

-40- ns

f

-14- ns

- - 100 ns

VGS = 0 - 10V VDD = 40V, ID = 25A,

- - 80 nC

RL = 1.6Ω

VGS = 0 - 5V - - 45 nC

(Figures 17, 18)

VGS = 0 - 1V - - 3.0 nC

- - 2.083oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature.

6-244

ISD= 25A - - 1.5 V
ISD = 25A, dISD/dt = 100A/µs - - 125 ns