Intersil RFP25N05 Datasheet
RFP25N05
Data Sheet July 1999 File Number
25A, 50V, 0.047 Ohm, N-Channel Power
MOSFET
The RFP25N05 N-channel power MOSFET is manufactured
using the MegaFET process. This process which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It wasdesignedfor use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. This transistor can be operated directly
from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP25N05 TO-220AB RFP25N05
NOTE: When ordering use the entire part number.
Features
• 25A, 50V
DS(ON)
= 0.047Ω
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
2112.4
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
S
4-504
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP25N05
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP25N05 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
GS
DM
AS
D
Refer to Peak Current Curve A
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
50 V
50 V
±20 V
25 A
Refer to UIS Curve
72 W
-55 to 175
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
G(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
G(10)
G(TH)VGS
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V (Figure 11) 50 - - V
= VDS, ID = 250mA (Figure 10) 2 - 4 V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
= 150oC- - 25µA
DSS,TC
VGS = ±20V - - ±100 nA
= 25A, VGS = 10V (Figure 9) - - 0.047 Ω
VDD = 25V, I
VGS = 10V, RG = 10Ω
(Figure 13)
≈ 12.5A, R
D
= 2.0Ω,
L
- - 60 ns
-14-ns
-30-ns
-45-ns
-22-ns
- - 100 ns
= 0V to 20V VDD = 40V,
VGS = 0V to 10V - - 45 nC
= 0V to 2V - - 3 nC
ID = 25A, RL = 1.6Ω
I
= 0.75mA
g(REF)
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
- - 80 nC
- 1075 - pF
- 350 - pF
- 100 - pF
(Figure 3) - - 2.083
o
C/W
--80oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
SD
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-505
ISD = 25A - - 1.5 V
ISD = 25A, dISD/dt = 100A/µs - - 125 ns
Typical Performance Curves
RFP25N05
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
125 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATION vsCASE
TEMPERATURE
2
1
0.5
0.2
0.1
0.1
0.05
THERMAL IMPEDANCE
0.01
10
0.02
0.01
-5
SINGLE PULSE
10
-4
-3
10
t1, RECTANGULAR PULSE DURATION (s)
NORMALIZED TRANSIENT
θJC,
Z
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
10
1/t2
θJC
0
x R
θJC
+ T
175
A
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
200
100
10
OPERATION IN THIS
AREA MAY BE
, DRAIN CURRENT (A)
LIMITED BY r
D
I
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
TC = 25oC
T
= MAX RATED
J
SINGLE PULSE
100µs
1ms
10ms
100ms
DC
10 100
200
100
, PEAK CURRENT CAPABILITY (A)
DM
I
10
10
VGS = 20V
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
-4
10
10
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-3
-2
10
t, PULSE WIDTH (s)
o
C DERATE PEAK
25
-1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-506
175 - T
150
10
C
0
1
10
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