Intersil RF1S22N10SM, RFP22N10 Datasheet
RFP22N10, RF1S22N10SM
Data Sheet July 1999 File Number
22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relaydrivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP22N10 TO-220AB RFP22N10
RF1S22N10SM TO-263AB F1S22N10
NOTE: When ordering use the entire part number. Add the suffix, 9A,
toobtaintheTO-263ABvariant in tape and reel, e.g. RF1S22N10SM9A.
Features
• 22A, 100V
•r
DS(ON)
= 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
o
C Operating Temperature
• 175
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
2385.3
Packaging
DRAIN
(FLANGE)
G
S
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
4-499
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP22N10, RF1S22N10SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP22N10,
RF1S22N10SMS UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 1MΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
GS
D
DM
D
100 V
100 V
±20 V
22
50
100 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero-Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0 (Figure 7) 100 - - V
= VDS, ID = 250µA (Figure 9) 2 - 4 V
VDS = 80V, VGS= 0V - - 1 µA
VDS = 80V, VGS= 0V, TC = 150oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
(OFF)
G(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
(ON)
G(10)VGS
G(TH)VGS
VGS = ±20V, VDS = 0 - - ±100 nA
= 22A, VGS = 10V (Figure 8) - - 0.080 Ω
VDD = 50Vwwwwwwwww, ID = 11A,
RL = 4.5Ω, VGS = 10V,
RGS = 25Ω
(Figure 11)
r
- - 60 ns
-13-ns
-24-ns
-65-ns
f
-18-ns
- - 120 ns
= 0V to 20V VDD = 80V, ID≈ 22A,
= 0V to 10V - - 75 nC
= 0V to 2V - - 3.5 nC
θJC
TO-220 and TO-263 - - 62
θJA
RL = 3.64Ω
I
= 1mA
g(REF)
(Figure 11)
- - 150 nC
- - 1.5
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
SDISD
rr
NOTE:
2. Pulse Test: Pulse Duration = 300µs maximum, duty cycle = 2%.
4-500
= 22A - - 1.5 V
ISD = 22A, dISD/dt = 100A/µs - - 200 ns
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