Intersil RFM15N12, RFM15N15, RFP15N15 Datasheet
RFP15N15
October 1998 File Number 1443.2Data Sheet
15A, 150V, 0.150 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09195.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP15N15 TO-220AB RFP15N15
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
Features
• 15A, 150V
•r
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.150Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
DRAIN
(TAB)
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP15N15
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP15N15 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
D
DM
GS
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
150 V
150 V
15
40
±20 V
75
0.6
-55 to 150
300
260
A
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Drain to Source On Voltage (Note 2) V
Input Capacitance C
DSSID
GS(TH)VGS
DSS
GSS
DS(ON)ID
ISS
= 250µA, VGS = 0V 150 - - V
= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS,VGS
= 0V, TC= 125oC25µA
VGS = ±20V, VDS = 0V - - ±100 nA
= 15A, VGS = 10V (Figures 6, 7) - - 0.150 Ω
= 15A, VGS = 10V - - 2.25 V
VDS = 25V, VGS = 0V, f = 1MHz
- - 1700 pF
(Figure 9)
Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t
OSS
RSS
d(ON)
VDD = 75V, I
≈ 7.5A, R
D
= 50Ω, VGS = 10V
G
- - 750 pF
- - 350 pF
-5075ns
RL = 9.9Ω,
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
(Figures 10, 11, 12)
r
f
- 150 225 ns
- 185 280 ns
- 125 190 ns
Thermal Resistance Junction-to-Case - - 1.67oC/W
Source to Drain Diode Specifications
PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
Reverse Recovery Time t
NOTES:
2. Pulse test: width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
2
ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 200 - ns
rr
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