Intersil RFP15N08L Datasheet
RFP15N08L
Data Sheet June 1999
15A, 80V, 0.140 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP15N08L is an N-Channel enhancement mode
silicon gate power field effecttransistorspecificallydesigned
for use with logic level(5volt) driving sources in applications
such as programmable controllers, automotive switching,
and solenoid drivers. This performance is accomplished
through a special gate oxide design which providesfullrated
conduction at gate biases in the 3-5 volt range, thereby
facilitating true on-off power control from logic circuit supply
voltages.
Formerly developmental type TA09804.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP15N08L TO-220AB RFP15N08L
NOTE: When ordering, use the entire part number.
File Number
Features
• 15A, 80V
•r
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly from Q-MOS, N-MOS,
TTL Circuits
• SOA is Power Dissipation Limited
• 175
• Logic Level Gate
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.140Ω
DS(ON)
o
C Rated Junction Temperature
Components to PC Boards”
Symbol
D
2840.1
Packaging
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-234
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP15N08L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP15N08L UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DS
DGR
GS
D
DM
D
Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
80 V
80 V
±10V
15 A
40 A
72
0.48
-55 to 175
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
DSSID
DSS
= 1mA, VGS = 0V 80 - - V
= VDS, ID = 1mA 1 - 2.5 V
TC = 25oC, VDS = 65V, VGS = 0V - - 1 µA
TC = 125oC, VDS = 65V, VGS = 0V - - 50 µA
Gate to Source Leakage Current I
Drain to Source On Voltage V
GSS
DS(ON)ID
VGS = 10V, VDS = 0V - - 100 nA
= 7.5A, VGS = 5V - - 1.05 V
ID = 15A, VGS = 5V - - 3.0 V
Drain to Source On Resistance (Note 2) r
Forward Transconductance V
Turn-On Delay Time t
DS(ON)ID
(plateau)
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
r
f
g(5)
g(TH)
θJC
= 7.5A, VGS = 5V - - 0.140 Ω
VDS = 15V, ID = 15A - - 4.5 V
VDD = 40V, ID = 7.5A, RGS = 6.25Ω,
VGS = 5V
- - 40 ns
- - 325 ns
- - 325 ns
- - 325 ns
= 0-10V VDD = 64V,
- - 80 nC
ID = 15A,
VGS = 0-5V - - 45 nC
RL = 4.27Ω
VGS = 0-1V - - 3 nC
- - 2.083oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Diode Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-235
ISD = 7.5A - - 1.4 V
ISD = 4A, dISD/dt = 100A/µs - 225 - ns
rr
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